Blue light cadmium-free quantum dot, preparation method thereof and quantum dot photoelectric device

A quantum dot and blue light technology, applied in the field of blue light cadmium-free quantum dots and their preparation, quantum dot optoelectronic devices, can solve the problems of difficult industrial application, poor nucleation uniformity, poor stability, etc., to control the reaction speed and optimize the uniformity. One degree, the effect of improving the uniformity

Active Publication Date: 2020-10-30
NANJING TECH CORP LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0007] However, due to the fact that the intrinsic InP structure itself is covalently bonded, the nucleation uniformity is poor, resulting in a wide half-width of the blue-emitting InP, generally above 45nm.
The luminescence performance and stability of InP quantum dots obtained by etching are poor, and the preparation process uses strong corrosive chemicals, which is difficult for industrial application
The crystallization of InP quantum dots synthesized at low temperature is not complete, and it is difficult to form a crystal structure with strong stability, resulting in poor stability, and subsequent high-temperature coating cannot be performed, and the luminous efficiency is low.

Method used

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  • Blue light cadmium-free quantum dot, preparation method thereof and quantum dot photoelectric device
  • Blue light cadmium-free quantum dot, preparation method thereof and quantum dot photoelectric device
  • Blue light cadmium-free quantum dot, preparation method thereof and quantum dot photoelectric device

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preparation example Construction

[0034] The invention provides a method for preparing blue cadmium-free quantum dots, which includes the following steps:

[0035] S1, mixing the indium precursor, the first ligand, and the solvent to prepare an indium-first ligand solution, where the first ligand is a long-chain carboxylic acid ligand with 10 to 18 carbons, and the first ligand The ratio of the amount of the carboxylate of the body to the amount of the indium ion of the indium precursor is (1:2) ~ (5:2);

[0036] S2, adding a short-chain zinc salt and a second ligand to the indium-first ligand solution to prepare a cation-mixed ligand solution, wherein at least part of the short-chain zinc salt is coordinated with the second ligand Together

[0037] S3, adding phosphorus precursor to the cation-mixed ligand solution, and obtaining a solution containing indium zinc phosphide quantum dots after the reaction.

[0038] In the present invention, "-" represents the bonding effect of an ionic bond or a coordination bond.

[...

Embodiment 1

[0064] Provide core-shell quantum dots, prepared by the following steps:

[0065] (1) Add 0.3mmol In(Ac) 3 (Indium acetate), 0.3mmol octadecanoic acid and 20mL octadecene were added to a 100mL three-necked flask, and the three-necked flask was placed in N 2 Heat to 180°C under exhaust, and after keeping at 180°C for 30min, add 0.9mmolZn(Ac) 2 (Zinc acetate) and 3.0mmol trioctylamine, react at 180℃ for 10min and then drop to 30℃, quickly inject 0.2mmol TMS-P (tris(trimethylsilyl)phosphine) and 2mL octadecene mixture and then heat up to 300°C, react at 300°C for 5 minutes to obtain a solution containing InZnP quantum dots;

[0066] (2) Keep the reaction temperature at 300℃, add 1.0mmol Zn(OA) to the InZnP quantum dot solution 2 (Zinc oleate), add 0.5mmol Se-TOP (selenium-trioctylphosphine) after reacting for 10min, react at 300℃ for 20min, then add 2.0mmol Zn(OA) to it 2 After reacting for 10 minutes, add 0.8mmol S-TOP (sulfur-trioctyl phosphine), react at 300°C for 30 minutes, and lo...

Embodiment 2

[0070] Provide core-shell quantum dots, prepared by the following steps:

[0071] (1) Add 0.3mmol In(Ac) 3 (Indium acetate), 0.3mmol octadecanoic acid and 20mL octadecene were added to a 100mL three-necked flask, and the three-necked flask was placed in N 2 Heat to 180°C under exhaust, and after keeping at 180°C for 30min, add 0.9mmolZn(Ac) 2 (Zinc acetate) and 3.0mmol trioctylamine, reacted at 180℃ for 10min, and then reduced to 30℃, quickly injected 0.2mmol TMS-P (tris(trimethylsilyl)phosphine) and 2mL octadecene mixture and then heated to 300°C, react at 300°C for 5min, then add 0.2mmol S-TOP (sulfur-trioctylphosphine), react for 5min, to obtain a solution containing InZnP / InZnPS quantum dots;

[0072] (2) Keep the reaction temperature at 300℃, add 1.0mmol Zn(OA) to the InZnP / InZnPS quantum dot solution 2 (Zinc oleate), add 0.5mmol Se-TOP (selenium-trioctylphosphine) after reacting for 10min, react at 300℃ for 20min, then add 2.0mmol Zn(OA) to it 2 After reacting for 10 minutes, ...

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Abstract

The invention discloses a blue light cadmium-free quantum dot, a preparation method thereof and a quantum dot light-emitting device. The preparation method of the cadmium-free quantum dot comprises the following steps that S1, an indium precursor, a first ligand and a solvent are mixed to prepare an indium-first ligand solution, the first ligand is a long-chain carboxylic acid ligand with the carbon number being 10-18, and the ratio of the amount of substance of carboxylate radicals of the first ligand to the amount of substance of indium ions of the indium precursor is (1: 2)-(5: 2); S2, short-chain zinc salt and a second ligand are added into the indium-first ligand solution to form a cation-mixed ligand solution, and at least part of the short-chain zinc salt and the second ligand are bonded through coordination bonds; S3, a phosphorus precursor is added into the cation-mixed ligand solution to react to obtain a solution containing indium zinc phosphide quantum dots. The InZnP quantum dot core with small size and few defects is prepared by introducing the short-chain zinc salt in the nucleation process of the quantum dot, and the introduction of the Zn element also optimizes theenergy band structure of the quantum dot so that the quantum dot with the luminescence range of 470-490nm is obtained.

Description

Technical field [0001] The invention relates to the technical field of quantum dot materials, in particular to a blue cadmium-free quantum dot, a preparation method thereof, and a quantum dot optoelectronic device. Background technique [0002] Quantum dots are semiconductor nanocrystals formed by hundreds or thousands of atoms. Due to their quantum confinement effect, quantum dots have unique optoelectronic properties and have broad application prospects in new displays, biomarkers, lasers and other fields. In particular, the research on quantum dot light-emitting diodes, using blue, green and red quantum dots as light-emitting layers, is expected to become a new technological route in the display industry. In the past thirty years, CdSe quantum dots have been widely studied due to their high fluorescence quantum efficiency and narrow half-width. However, the presence of the toxic heavy metal Cd can cause major environmental problems and is an important obstacle to its large-sc...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y30/00B82Y40/00H01L51/50H01L31/0352H01L33/04
CPCC09K11/883C09K11/02B82Y20/00B82Y30/00B82Y40/00H01L31/035218H01L33/04H10K50/115
Inventor 乔培胜谢阳腊高静
Owner NANJING TECH CORP LTD
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