Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Quantum dots, preparation method thereof and optoelectronic device

A technology of quantum dots and quantum dot solutions, which is applied in the field of quantum dot luminescent materials, can solve problems such as the difficulty in regulating the composition and structure of quantum dots, and achieve the effects of avoiding self-nucleation, narrowing the half-peak width of fluorescence, and improving the energy band structure

Active Publication Date: 2022-01-18
NANJING TECH CORP LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The main purpose of the present invention is to provide a quantum dot, its preparation method and optoelectronic device, to solve the problem that the composition structure of quantum dots such as InP base in the prior art is difficult to control

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dots, preparation method thereof and optoelectronic device
  • Quantum dots, preparation method thereof and optoelectronic device
  • Quantum dots, preparation method thereof and optoelectronic device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] Since the Cd-free quantum dots in the prior art are difficult to form quantum dots with adjustable composition and structure, in order to improve this situation, in a typical implementation of the present application, a II-III-V-VI quantum dot is provided A preparation method, the preparation method comprising: Step A, preparing the first nanocluster, the second nanocluster and the third nanocluster, wherein the first nanocluster is a III-V nanocluster, and the second nanocluster The clusters are III-II-V nanoclusters, and the third nanoclusters are III-II-VI nanoclusters; step B, mixing the first nanoclusters with a non-coordinating solvent to form the first quantum dot solution; step C, mixing and heating the second nanocluster and the first quantum dot solution to form a second quantum dot solution; step D, mixing and heating the third nanocluster and the second quantum dot solution to form a third quantum dot solution, the third quantum dot solution The third quantu...

Embodiment 1

[0065] (1) The first nanocluster solution: 0.2mmol In(Ac) 3 (Indium acetate), 0.6mmol hexadecanic acid and 6mL ODE (octadecene) join in the 50mL three-necked flask, and this three-necked flask is placed in N 2 Heat to 180°C under exhaust state, keep at 180°C for 30min, then drop to 40°C. Add 0.1 mmol TMS-P (tris(trimethylsilyl)phosphine) and 1 mmol trioctylamine to react for 20 min to form InP nanoclusters, and cool down to room temperature for later use.

[0066] The second nanocluster solution: 0.2mmol In(Ac) 3 (Indium acetate), 0.2mmol Zn(Ac) 2 (zinc acetate), 1.0mmol hexadecanic acid and 6mL ODE (octadecene) were added into a 50mL three-necked flask, and the three-necked flask was heated to 180°C under N2 exhaust state, kept at 180°C for 30min, and then dropped to 60°C. Add 0.1 mmol TMS-P (tris(trimethylsilyl) phosphine) and 5 mmol dioctylamine to react for 20 min to form InZnP nanoclusters, and cool down to room temperature for later use.

[0067] The third nanoclust...

Embodiment 2

[0071] (1) The first nanocluster solution: 0.2mmol In(Ac) 3 (Indium acetate), 0.6mmol hexadecanic acid and 6mL ODE (octadecene) join in the 50mL three-necked flask, and this three-necked flask is placed in N 2 Heat to 180°C under exhaust state, keep at 180°C for 30 minutes, then drop to 60°C. Add 0.04 mmol TMS-P (tris(trimethylsilyl) phosphine) and 1 mmol trioctylamine to react for 20 min to form InP nanoclusters, and cool down to room temperature for later use.

[0072] The second nanocluster solution: 0.2mmol In(Ac) 3 (Indium acetate), 0.1mmol Zn(Ac) 2 (zinc acetate), 0.8mmol hexadecanic acid and 6mL ODE (octadecene) were added into a 50mL three-necked flask, and the three-necked flask was heated to 180°C under N2 exhaust state, and kept at 180°C for 30min, then dropped to 60°C. Add 0.04 mmol TMS-P (tris(trimethylsilyl) phosphine) and 5 mmol dioctylamine to react for 20 min to form InZnP nanoclusters, and cool down to room temperature for later use.

[0073] The third n...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
full width at half maximumaaaaaaaaaa
sizeaaaaaaaaaa
quantum efficiencyaaaaaaaaaa
Login to View More

Abstract

The invention provides a quantum dot, its preparation method and a photoelectric device. The preparation method of II‑III‑V‑VI quantum dots comprises: preparing the first nanocluster, the second nanocluster and the third nanocluster, the first nanocluster is III‑V nanocluster, the second nanocluster The cluster is III‑II‑V nanocluster, and the third nanocluster is III‑II‑VI nanocluster; the first nanocluster is mixed with a non-coordinating solvent to form the first quantum dot solution; the second nanocluster The cluster is mixed with the first quantum dot solution and heated to form the second quantum dot solution; the third nanocluster and the second quantum dot solution are mixed and heated to form the third quantum dot solution, and the third quantum dot in the third quantum dot solution is II ‑III‑V‑VI quantum dots. Mixing and adding each nanocluster one by one can effectively dope, improve the energy band structure, reduce surface defects and dangling bonds, so that the composition structure can be adjusted and the size uniformity of quantum dots can be improved.

Description

technical field [0001] The invention relates to the field of quantum dot luminescent materials, in particular to a quantum dot, its preparation method and a photoelectric device. Background technique [0002] Quantum dot material is a kind of inorganic compound with quantum confinement effect, which has excellent luminescent performance. Common quantum dot materials include CdSe, CdS, ZnSe, and ZnS of II-VI groups, InP and InAs of III-V groups, and CuInS and CuInSe of I-III-VI groups. Among the above-mentioned materials, CdSe and CdS are quantum dots with excellent luminescent performance and are widely used, but they contain heavy metal Cd, which is restricted by EU RoSH and other regulations, casting a shadow over their commercialization process. Among the existing Cd-free quantum dots, the InP material has the strongest substitution effect, which has a wide luminous range and a large Stokes shift, and can be used in display and biology fields. However, the synthesis of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y30/00
CPCC09K11/883C09K11/02B82Y20/00B82Y30/00
Inventor 乔培胜吴洪剑高静
Owner NANJING TECH CORP LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com