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30 results about "Zinc phosphite" patented technology

Zinc phosphide (Zn3P2) is an inorganic chemical compound. It is a grey solid, although commercial samples are often dark or even black. It is used as a rodenticide. Zn3P2 is a semiconductor with a direct band gap of 1.5 eV and may have applications in photovoltaic cells.

Method of making photovoltaic devices with reduced conduction band offset between pnictide absorber films and emitter films

The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber. In the case of an n-type emitter such as ZnS or a tertiary compound such as zinc sulfide selenide (optionally doped with Al) or the like, an exemplary tuning agent is Mg when the absorber is a p-type pnictide material such as zinc phosphide or an alloy of zinc phosphide incorporating at least one additional metal in addition to Zn and optionally at least one non-metal in addition to phosphorus. Consequently, photovolotaic devices incorporating such films would demonstrate improved electronic performance.
Owner:CALIFORNIA INST OF TECH +1

Flame retardant polyamide composition

InactiveCN106147213AGlass fiberHalogen
The present invention relates to a flame retardant polyamide composition comprising(a)at least one polyamide;(b)about 8 to 35 wt% of at least one halogen-containing flame retardant;(c)at least one of about 0.3 to 12 wt% basic zinc phosphite represented by the formula xZnO.ZnHPO3, wherein x is a number from 1 / 2 to 10; and optionally(d)up to about 60 wt% of glass fiber, and the total weight percentage of all components included in the composition is 100 weight%.
Owner:EI DU PONT DE NEMOURS & CO

Preparation method of high-purity zinc phosphide

ActiveCN102992286AAchieving Safe SynthesisImprove yieldPhosphidesSlow coolingHigh heat
The invention discloses a preparation method of high-purity zinc phosphide, which comprises the following steps of: 1) quartz tube pretreatment; 2) dosing; 3) tube sealing; 4) high-temperature synthesis; and 5) product treatment. According to the invention, high-purity phosphorus and high-purity zinc are directly combined to produce high-purity zinc phosphide, the main reaction process is carried out after the temperature reaches the melting point of zinc, the reaction is actually a steam reaction, and the method is an element direct synthesis method; the requirements for the form of raw materials are not very strict; the raw material is not processed, and the requirement for high purity is met; the pressure in a tube is controlled through temperature control operations such as slow heating, constant temperature, slow cooling and the like; the phosphorus steam pressure in the quartz tube is successfully controlled through length allocation of a heating area and a condensation area for synthesizing a quartz tube, and safe synthesis of a large amount of zinc phosphide is realized; and relatively high yield of a product is realized by controlling the length of the condensation area and the heating area, and the product is applied to the application fields of photoelectric device manufacturing, diffusion sources, nano materials and the like.
Owner:峨嵋半导体材料研究所

Preparation method of zinc phosphide

The invention relates to a preparation method of zinc phosphide. The invention belongs to a production method of chemical materials and in particular relates to a preparation method of tetragonal system high-purity zinc phosphide. The preparation method of zinc phosphide comprises the following steps: firstly, uniformly mixing metal zinc powder with red phosphorus powder in mass ratio of (3.1-3.3):1, placing mixture into a high-purity graphite boat, then placing the high-purity graphite boat into a smelting furnace while protective gas is introduced until pressure is 90-115KPa, and sealing the smelting furnace; secondly, slowly heating and warming at a speed of 0.5-35 DEG C / min, and carrying out synthetic reaction at the temperature of 100-900 DEG C, so that blocky zinc phosphide is obtained. The zinc phosphide obtained by adopting the preparation method is tetragonal system Zn3P2, product composition phase is uniform, purity is high, flow is short, a production technology is simple, and industrialization can be realized.
Owner:云南锡业研究院有限公司研究设计院

Calcium-zinc composite stabilizer and preparation method thereof

The invention relates to a calcium-zinc composite stabilizer and a preparation method thereof. The calcium-zinc composite stabilizer consists of the following raw materials in percentage by weight: 20%-60% of alkaline calcium-zinc phosphite, 5%-30% of calcium-zinc silicate, 10%-50% of hydrotalcite or hydrotalcite-like compounds, 5%-30% of metal hydroxide, 1%-3% of a surfactant, 5%-30% of an auxiliary stabilizer, and 5%-30% of a lubricant. The calcium-zinc composite stabilizer and the preparation method thereof have the characteristics that the stability is good, the resistance to vulcanization pollution is achieved, the use amount is low, the heat stability of the calcium-zinc composite stabilizer is superior to that of the traditional lead-salt composite stabilizer, the weather resistance is good, the mold cleaning period is long, and the physical properties of products are excellent; waste water, waste gas and waste residues are not generated in production; no dust is generated in use of the stabilizer; the production cost is low; the raw materials are easily available; the calcium-zinc composite stabilizer can widely substitute for the traditional lead-salt composite stabilizer and an organic tin stabilizer; the economic, social and environmental benefits are remarkable.
Owner:JIANGSU LIANMENG CHEM

Method for improving high-temperature heat stabilization of thermoplastic polymers or composites thereof by inorganic metal phosphite

InactiveCN109082115AProtection from temperature effectsOvercome the defects of pyrolysis and discolorationDecompositionThermosetting polymer
The invention discloses a method for improving high-temperature heat stabilization of thermoplastic polymers or composites thereof by inorganic metal phosphite. The method includes adding the inorganic metal phosphite into a raw material, wherein the inorganic metal phosphite is selected from at least one of aluminum phosphite, zinc phosphite, calcium phosphite and magnesium phosphite, and the adding amount of the inorganic metal phosphite accounts for 0.1-2% of the total weight of the thermoplastic polymers or the composites thereof. The method has the advantages that cross-linking, decomposition, degradation, discoloration and other problems of the thermoplastic polymers or the composites thereof are avoided under the joint action of the high temperature and the shearing force, and various properties of the materials are maintained.
Owner:JIANGSU LISIDE NEW MATERIAL +1

Blue light cadmium-free quantum dot, preparation method thereof and quantum dot photoelectric device

The invention discloses a blue light cadmium-free quantum dot, a preparation method thereof and a quantum dot light-emitting device. The preparation method of the cadmium-free quantum dot comprises the following steps that S1, an indium precursor, a first ligand and a solvent are mixed to prepare an indium-first ligand solution, the first ligand is a long-chain carboxylic acid ligand with the carbon number being 10-18, and the ratio of the amount of substance of carboxylate radicals of the first ligand to the amount of substance of indium ions of the indium precursor is (1: 2)-(5: 2); S2, short-chain zinc salt and a second ligand are added into the indium-first ligand solution to form a cation-mixed ligand solution, and at least part of the short-chain zinc salt and the second ligand are bonded through coordination bonds; S3, a phosphorus precursor is added into the cation-mixed ligand solution to react to obtain a solution containing indium zinc phosphide quantum dots. The InZnP quantum dot core with small size and few defects is prepared by introducing the short-chain zinc salt in the nucleation process of the quantum dot, and the introduction of the Zn element also optimizes theenergy band structure of the quantum dot so that the quantum dot with the luminescence range of 470-490nm is obtained.
Owner:NANJING TECH CORP LTD

Method for improving high-temperature thermal stabilization of melamine derivative flame retardant by utilizing inorganic metal phosphate, and product and application of melamine derivative flame retardant

The invention discloses a method for improving high-temperature thermal stabilization of a melamine derivative flame retardant by utilizing an inorganic metal phosphite. An inorganic metal phosphate is added into raw materials, wherein the inorganic metal phosphate is at least one selected from aluminum phosphite, zinc phosphite, calcium phosphite and magnesium phosphate, and based on the total weight of the melamine derivative flame retardant, the addition amount of the inorganic metal phosphite is 0.1-40%. Through the method disclosed by the invention, the melamine derivative has a high thermal decomposition temperature, and disadvantages of decomposition, degradation of a matrix polymer, migration, equipment corrosion and the like of the flame retardant are avoided. Meanwhile, performance of the flame retardant is maintained, the flame retardant synergy of the flame retardant with other the flame retardants is improved, and the application field of the flame retardant is expanded.
Owner:JIANGSU LISIDE NEW MATERIAL +1

Safe production technique for manufacturing high-purity phosphine on large scale

The invention discloses a safe production technique for manufacturing high-purity phosphine on large scale. Aluminum phosphide and deionized water or zinc phosphide and acetic acid used as raw materials are subjected to sealed solid feeding, negative-pressure three-stage cascade reactor reaction, low-temperature low-pressure trapping purification, tail gas oxidation trivalent phosphorus removal, and absorption of phosphorus pentoxide by alkali liquor and activated charcoal under closed reaction conditions. The technique can simultaneously satisfy the four requirements of capability of large-scale industrial manufacturing from laboratories to industrialization, control on the virulent phosphine in air in the production workshop and surrounding environment to be lower than allowable concentration, no intricate corrosion problem in equipment, and high product purity, and provides a safe and reliable production technique for industrial production.
Owner:李达刚 +3

Preparation method of high-purity zinc phosphide

ActiveCN102992286BAchieving Safe SynthesisImprove yieldPhosphidesZinc phosphiteRaw material
The invention discloses a preparation method of high-purity zinc phosphide, comprising the following steps: 1) quartz tube pretreatment, 2) batching, 3) tube sealing, 4) high-temperature synthesis, 5) product treatment, the invention uses high-purity phosphorus and high-purity Zinc direct conversion and production of high-purity zinc phosphide, the main reaction process occurs after the temperature reaches the melting point of zinc, actually belongs to the reaction between steam, belongs to the direct synthesis of elements, the requirements for the form of raw materials are not very strict, and the raw materials have not been processed , to meet the requirements of high purity, the present invention controls the internal pressure of the tube through temperature control operations such as slow temperature rise, constant temperature, and slow temperature drop, and distributes the length of the heating area and condensation area of ​​the synthetic quartz tube to successfully control the phosphorus vapor pressure in the quartz tube to achieve a large amount of The safe synthesis of zinc phosphide; through the control of the length of the condensation area and the heating area, a higher yield of the product is achieved. The product is used in the application fields of optoelectronic device production, diffusion source, and nanomaterials.
Owner:峨嵋半导体材料研究所

Aqueous zinc ion battery negative electrode material with functional protection layer and preparation method of aqueous zinc ion battery negative electrode material

The invention belongs to the technical field of preparation of zinc ion battery electrode materials, and particularly relates to an aqueous zinc ion battery negative electrode material with a functional protection layer and a preparation method of the aqueous zinc ion battery negative electrode material. Zinc sulfate heptahydrate, sodium phosphite, stannous chloride dehydrate, boric acid, sodium sulfate, disodium ethylene diamine tetraacetate and deionized water are mixed to form an electroplating solution, and tin-doped zinc phosphide is uniformly deposited on a zinc sheet through an electrodeposition method to form the coating (Zn (at) Sn-ZnP). According to the invention, the Sn-ZnP functional protection layer is constructed on the surface of the metal zinc negative electrode, and P is inserted into a Zn lattice to form the ZnP protection layer through an economical and efficient electro-deposition method, so that the rapid transfer of Zn < 2 + > is facilitated, and the electrochemical reaction energy barrier in the Zn electroplating / stripping process is reduced; and meanwhile, the ZnSn alloy formed by electro-deposition can effectively inhibit the hydrogen evolution reaction of a zinc electrode and the generation of irreversible byproducts, so that the cycle life of the battery is prolonged.
Owner:ANHUI UNIVERSITY OF TECHNOLOGY

Copper-based brazing filler metal capable of accurately controlling using amount of brazing flux and good in brazing seam protection effect

The invention belongs to the field of welding materials, and particularly relates to copper-based brazing filler metal capable of accurately controlling the using amount of brazing flux and good in brazing seam protection effect. The copper-based brazing filler metal comprises a round or oval copper-based brazing filler metal inner wire and a protective film; the protective film is prepared from 10%-12% of zinc phosphide powder, 5%-7% of kyanite powder, 3%-5% of glass fibers, 2.5%-3.5% of nano silicon dioxide powder, 10%-12% of boric anhydride powder and 20%-25% of potassium fluoborate powder which are all treated by the aid of a coupling agent, 5.5%-6.5% of a curing agent and the balance epoxy resin. In the preparation process, the wire breakage phenomenon is avoided, the wettability of the brazing filler metal is high during brazing, and gaps between workpieces to be welded can be effectively filled; during brazing, the using amount of the brazing flux can be accurately controlled, and the problem that the using amount of the brazing flux is not enough during brazing or a large amount of the brazing flux is left after brazing is solved; during brazing, the protection effect on brazing seams is good, the protection layer is easy to remove, the brazing seams have few defects, and the strength is high.
Owner:ZHENGZHOU UNIV

Copper-based flux-cored solder wire easy to prepare, high in wettability and high in soldering seam strength

The invention belongs to the field of a welding material, and particularly relates to a copper-based flux-cored solder wire easy to prepare, high in wettability and high in soldering seam strength. The copper-based flux-cored solder wire comprises outer skin and flux core powder; the flux core powder comprises 5%-8% of nano hexagonal boron nitride, 8%-12% of nano zinc carbonate, 16%-20% of zinc phosphide, 25% of borax, 18% of boric acid, 7% of potassium fluoride and the balance of tin powder; the outer skin contains 8%-12% of silver, 1.2%-2.5% of indium, 1.5%-2.2% of antimony and the balance of copper; and the mass of the flux core powder accounts for 25%-32% of the total mass of the flux-cored solder wire. According to the invention, no brittle phase exists in the outer skin; the nano hexagonal boron nitride with high lubricity is contained in the flux core powder; wires are not broken in the drawing process, and the copper-based flux-cored solder wire is easy to prepare; the wettability of brazing filler metal can be enhanced through the existence of phosphorus after zinc phosphide in the flux core powder is molten during brazing and the stirring effect of overflow of carbon dioxide; the nano hexagonal boron nitride and decomposed nano zinc oxide can effectively improve the strength of a brazing seam, and a brazing flux does not need to be matched during brazing.
Owner:ZHENGZHOU UNIV

Taxus chinensis planting method based on seed collecting planting

The invention provides a taxus chinensis planting method based on seed collecting planting. The method comprises the steps of S1, planting environment selection: a farmland with the slope smaller than20 degrees, a deep and thick soil layer, a loosened structure, abundant humus and excellent drainage is selected; S2, seed collecting treatment: ripe fruits on a ripe taxus chinensis tree are removed, put into a basin to be rubbed and cleaned until seed coats are broken, the rubbing cleaning is stopped after 50% of a seed kernel is exposed, and the ripe fruits are placed in a shady place to be dried by air for spare use; S3, seedling bed preparation: pits are dug, the pit depth is 25-35 mm, the pit diameter is 35-45 mm, and the spacing between the adjacent pits is 2.0-2.5 m; S4, planting: a greenhouse is constructed, bunch planting is conducted on the seeds to plant the seeds in the dug pits, the seeds are covered with 1-2 cm of fine earth, thorough watering is conducted, an agriculturalmembrane covers the seeds, the four sides of the agricultural membrane are tightly pressed by mud, zinc phosphide is prepared into a toxic bait to prevent rat plague; S5, young seedling transplanting:when small seedlings grow to the state with 3-4 leaves, transplanting is conducted according to the plant spacing of 15-20 cm and the row spacing of 25-30 cm; S6, nursing management; S7, transplanting forestation: when the young seedlings grow to the height of 30-50 cm, transplanting forestation is conducted in spring; S8, forestry nursing.
Owner:华容县新发农业开发有限公司

Novel foliar fertilizer for promoting generation of SOD in rice

The invention discloses a novel foliar fertilizer for promoting the generation of SOD in rice. The novel foliar fertilizer is characterized in that the novel foliar fertilizer adopts iron manganese phosphite, copper zinc phosphite, potassium citrate, calcium nitrate, borax, urea and sodium phosphite as main components, the fertilizer is applied in the heading stage and the grain filling stage ofrice in a foliar fertilization manner, and the SOD content in grown rice is equal to or more than 30 U / mg.
Owner:杨洋

Graded zinc diffusing method based on MOCVD (Metal-Organic Chemical Vapor Deposition) system for producing chip of indium-gallium-arsenic photoelectric detector

The invention relates to a graded zinc diffusing method based on an MOCVD system for producing the chip of an indium-gallium-arsenic photoelectric detector. The method comprises the following steps: asemiconductor wafer which does not form an InGaAs PIN structure of a PN junction is cleaned and blown to dry by high-purity nitrogen; an MOCVD reaction chamber is heated up, depressurized and cleaned; the semiconductor wafer is placed in the reaction chamber; the pressure of the reaction chamber is set; diffusion taking a zinc phosphide compound which is formed by zinc methide (DMZn) and phosphorane (PH3) at high temperature as a diffusion source is conducted with the presence of catalytic reaction and the shielding gas; after the completion of the diffusion, the gas is turned off, the reaction chamber is cooled down and filled with nitrogen and has a pressure rise; and the wafer which undergoes the diffusion is taken out of the reaction chamber. As the diffusion rules of zinc in InP material and InGaAs material have great difference, the graded diffusion method is adopted. With the method, both the InP layer and the InGaAs layer can have rather high current carrier concentration, good interface, rather good homogeneity, technique repeatability, high response and precise control and can be manufactured on a large scale.
Owner:WUHAN HUAGONG GENUINE OPTICS TECH

Method of fabricating photovoltaic devices with reduced conduction band shift between pnictide absorber and emitter films

The principles of the present invention are used to reduce the conduction band shift between chalcogenide emitter and phosphonide absorber films. Alternatively, the present invention provides a strategy to more closely match the electron affinity properties between the absorber and emitter components. The resulting photovoltaic device has the potential to have higher efficiency and higher open circuit voltage. The resistance of the resulting junction will decrease as current leakage decreases. In an illustrative implementation, the present invention incorporates one or more modulators into the emitter layer to modulate electron affinity properties, thereby reducing the conduction band shift between the emitter and the absorber. In the case of n-type emitters such as ZnS or ternary compounds such as zinc selenide sulfide (optionally doped with Al), etc., when the absorber is a p-type phosphoride material such as zinc phosphide or doped with other than Zn When phosphating a zinc alloy with at least one other metal and optionally at least one non-metal other than phosphorus, an exemplary modifier is Mg. Therefore, photovoltaic devices including such films exhibit improved electronic performance.
Owner:DOW GLOBAL TECH LLC +1

Environmentally friendly flame-retardant polyvinyl chloride composition for drain pipe and preparation method thereof

InactiveCN106751144AGuaranteed stabilityStrong dehydrationHalloysitePentaerythritol
The invention relates to an environmentally friendly flame-retardant polyvinyl chloride composition for a drain pipe and a preparation method thereof. The environmentally friendly flame-retardant polyvinyl chloride composition for a drain pipe comprises, by mass, 100 parts of polyvinyl chloride, 2 to 10 parts of a compound zinc-based flame-retardant heat stabilizer, 1 to 5 parts of a lubricant, 0 to 15 parts of an impact modifier, 0.5 to 5 parts of a pigment and 0 to 60 parts of a filler. The compound zinc-based flame-retardant heat stabilizer comprises, by mass, 100 parts of zinc phosphite, 10 to 30 parts of a synergistic stabilizer, 10 to 15 parts of tripentaerythritol phosphite, 35 to 70 parts of nano-hydrotalcite and 15 to 40 parts of halloysite. The drain pipe prepared from the environmentally friendly flame-retardant polyvinyl chloride composition retains the mechanical properties of the pipe, has excellent flame retardancy and smoke suppression performances, provides convenience for production of a building drain pipe having high fire safety and satisfies requirements on comprehensive lead-free development of a PVC pipe.
Owner:GUANGDONG LIANSU TECH INDAL

A method for growing large-sized germanium-zinc phosphide crystals with increased heat transfer

The invention relates to a growth method of a large-sized zinc germanium phosphide crystal for increasing heat transfer, and the invention relates to a growth method of a zinc germanium phosphide crystal. The invention aims to solve the existing technical problems that the germanium-zinc phosphide crystal grown by the vertical Bridgman method is easy to crack, and cracks and twin crystal defects appear inside the crystal. This method: one, seed crystal and ZnGeP 2 Put the polycrystalline material into a PBN crucible, put it into a quartz ampoule and vacuum-pack it; 2. Put the quartz ampule into a crystal growth furnace and heat it up; 3. Heat the ZnGeP 2 The polycrystalline material and the seed crystal are partially melted; 3. The seed crystal grows again; 4. The crystal grows; 5. The temperature is lowered to obtain the germanium zinc phosphide crystal. During the preparation process, the growth rate of the crystal and the heat dissipation rate inside the crystal are adjusted by adjusting the flow rate and temperature of the inert gas. The germanium zinc phosphide crystal has no cracks and twine defects inside, and the 2μm absorption coefficient of the crystal element is reduced to 0.02cm ‑1 , can be used in high-energy laser output devices.
Owner:HARBIN INST OF TECH

Zinc phosphide material, zinc phosphide composite material and preparation method and application thereof

The invention discloses a zinc phosphide material, a zinc phosphide composite material and a preparation method and application thereof. The zinc phosphide composite material is doped with amorphous zinc phosphate. The preparation method of the zinc phosphide material comprises the following step: ball-milling a mixture of metal zinc, zinc oxide and phosphorus to obtain the zinc phosphide material. By doping zinc phosphate in zinc phosphide, volume expansion of active zinc phosphide in the charging and discharging process can be buffered, the utilization rate of the zinc phosphide material as a potassium ion negative electrode material is increased, and the cycling stability of the electrode material is improved. Through one-step ball milling, the raw materials are subjected to an oxidation-reduction reaction, and zinc phosphate is formed in situ while zinc phosphide is generated. Other post-treatment is not needed, and large-scale production and use are facilitated. In addition, a carbon material is mixed and added into the zinc phosphide material to form a composite material which is used as an active material of the negative electrode material of the potassium ion battery, so that the phenomenon that the conductivity is reduced due to the existence of zinc phosphate can be compensated.
Owner:UNIVERSITY OF MACAU
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