The application belongs to the technical field of solar photovoltaic materials, and particularly discloses a preparation method of
phosphorus-doped
silicon master
alloy. A double-temperature-zone horizontal furnace is used, and
zinc phosphide is used as a
dopant. A sealed
quartz horizontal
ampoule is arranged in the double-temperature-zone horizontal furnace. A
graphite boat is arranged in the high-temperature section of the
quartz horizontal
ampoule, and
polycrystalline silicon material is arranged in the
graphite boat. A
quartz crucible is arranged in the low-temperature section, and
zinc phosphide is arranged in the
quartz crucible. Different temperatures of the high-temperature section and the low-temperature section are set, and the temperature is kept for a period of time, and then the temperature is reduced to obtain the
phosphorus-doped
silicon master
alloy. The speed of synthesizing the
phosphorus-doped
silicon master
alloy is fast, the method is safe and reliable, the requirement for equipment is low, and the manufacturing cost of the phosphorus-doped silicon master alloy is greatly reduced.