A method for growing large-sized germanium-zinc phosphide crystals with increased heat transfer

A technology of germanium zinc phosphide and growth method, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of easy cracking of germanium zinc phosphide crystals, contracting crystals, crystal cracks, etc.

Active Publication Date: 2021-06-08
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the existing technical problems that the existing germanium zinc phosphide crystals grown by the vertical Bridgman method are easy to crack, and cracks and twin crystal defects appear inside the crystal, and provide a large-sized germanium zinc phosphide crystal that increases heat transfer. crystal growth method

Method used

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  • A method for growing large-sized germanium-zinc phosphide crystals with increased heat transfer
  • A method for growing large-sized germanium-zinc phosphide crystals with increased heat transfer
  • A method for growing large-sized germanium-zinc phosphide crystals with increased heat transfer

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Embodiment 1

[0032] Embodiment 1: The growth method of increasing the heat transfer large-scale germanium phosphide zinc crystal of the present embodiment is carried out according to the following steps:

[0033] 1. Put the seed crystal 11 into the seed crystal well of the PBN crucible 9, and then add high-purity ZnGeP with a mass percent purity of 99.96%. 2 Polycrystalline raw material 12, then PBN crucible 9 is put into quartz ampoule 10, then quartz ampoule 10 is evacuated to 10 -4 Pa for vacuum packaging;

[0034] 2. Schematic diagram of the structure of the crystal growth furnace for growing crystals. figure 1 , 2 As shown, the upper part of the furnace body is a high-temperature zone 1, the lower part is a low-temperature zone 2, and the middle is a transition zone 3. The furnace is filled with alumina hollow balls 4 as insulation materials, and a resistance wire 5 is set in the cavity as a heating device, and a thermocouple 6 is set. As a temperature measuring device, the molybde...

Embodiment 2

[0042] Embodiment 2: The growth method of increasing heat transfer large-scale germanium phosphide zinc crystal of the present embodiment is carried out according to the following steps:

[0043] 1. Put the seed crystal 11 into the seed crystal well of the PBN crucible 9, and then add high-purity ZnGeP with a mass percent purity of 99.95% 2 Polycrystalline raw material 12, then PBN crucible 9 is put into quartz ampoule 10, then quartz ampoule 10 is evacuated to 10 -4 Pa for vacuum packaging;

[0044] Two, the structure of the crystal growth furnace of growing crystal is identical with the crystal growth furnace in embodiment 1; Quartz ampoule 10 is put on the crucible frame 8 in the crystal growth furnace, and the bottom of quartz ampoule 10 is positioned at low temperature zone 2, and quartz ampoule 10 The top of is located in high temperature zone 1; set the temperature in high temperature zone 1 to 1068°C, the temperature in low temperature zone 2 to 998°C, and the tempera...

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Abstract

The invention relates to a growth method of a large-sized zinc germanium phosphide crystal for increasing heat transfer, and the invention relates to a growth method of a zinc germanium phosphide crystal. The invention aims to solve the existing technical problems that the germanium-zinc phosphide crystal grown by the vertical Bridgman method is easy to crack, and cracks and twin crystal defects appear inside the crystal. This method: one, seed crystal and ZnGeP 2 Put the polycrystalline material into a PBN crucible, put it into a quartz ampoule and vacuum-pack it; 2. Put the quartz ampule into a crystal growth furnace and heat it up; 3. Heat the ZnGeP 2 The polycrystalline material and the seed crystal are partially melted; 3. The seed crystal grows again; 4. The crystal grows; 5. The temperature is lowered to obtain the germanium zinc phosphide crystal. During the preparation process, the growth rate of the crystal and the heat dissipation rate inside the crystal are adjusted by adjusting the flow rate and temperature of the inert gas. The germanium zinc phosphide crystal has no cracks and twine defects inside, and the 2μm absorption coefficient of the crystal element is reduced to 0.02cm ‑1 , can be used in high-energy laser output devices.

Description

technical field [0001] The invention relates to a growth method of germanium zinc phosphide crystal. Background technique [0002] Zinc germanium phosphide (ZnGeP 2 , abbreviated ZGP) crystal as a nonlinear optical crystal has important applications in the fields of infrared spectroscopy, infrared medical devices, drug detection, red lithography, monitoring and sensing. The existing germanium zinc phosphide crystal growth generally adopts the vertical Bridgman method. The operation mode of this method is divided into two types, one is that the crucible does not move, and the temperature field is adjusted by moving the furnace body to grow single crystals; the other is that the furnace The body does not move, and the temperature field is adjusted by lowering the crucible to grow ZGP single crystal. During the growth process of ZGP single crystal in this method, ZGP crystal has very strict requirements on the growth environment, and the impact of slight vibration on the crys...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/02C30B29/10G02F1/355
CPCC30B11/006C30B11/02C30B29/10G02F1/3551
Inventor 朱崇强陈亮雷作涛杨春晖郝树伟
Owner HARBIN INST OF TECH
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