Graded zinc diffusing method based on MOCVD (Metal-Organic Chemical Vapor Deposition) system for producing chip of indium-gallium-arsenic photoelectric detector

A photodetector and diffusion method technology, applied in circuits, electrical components, semiconductor devices, etc., to achieve good uniformity, suitable for mass production, and good process repeatability
CN101567407BActive Publication Date: 2010-12-29WUHAN HUAGONG GENUINE OPTICS TECH
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
WUHAN HUAGONG GENUINE OPTICS TECH
Publication Date
2010-12-29

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Abstract

The invention relates to a graded zinc diffusing method based on an MOCVD system for producing the chip of an indium-gallium-arsenic photoelectric detector. The method comprises the following steps: asemiconductor wafer which does not form an InGaAs PIN structure of a PN junction is cleaned and blown to dry by high-purity nitrogen; an MOCVD reaction chamber is heated up, depressurized and cleaned; the semiconductor wafer is placed in the reaction chamber; the pressure of the reaction chamber is set; diffusion taking a zinc phosphide compound which is formed by zinc methide (DMZn) and phosphorane (PH3) at high temperature as a diffusion source is conducted with the presence of catalytic reaction and the shielding gas; after the completion of the diffusion, the gas is turned off, the reaction chamber is cooled down and filled with nitrogen and has a pressure rise; and the wafer which undergoes the diffusion is taken out of the reaction chamber. As the diffusion rules of zinc in InP material and InGaAs material have great difference, the graded diffusion method is adopted. With the method, both the InP layer and the InGaAs layer can have rather high current carrier concentration, good interface, rather good homogeneity, technique repeatability, high response and precise control and can be manufactured on a large scale.
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Description

technical field

[0001] The invention relates to a gradual zinc diffusion method for making an indium gallium arsenic photodetector based on an MOCVD system. Background technique

[0002] InP-based InGaAs PIN photodetectors are widely used in the field of optical fiber communication. As the core component of light receiving in communication, CATV system, and optoelectronic technology, its application space is very huge. The InP / InGaAs PIN detector epitaxial material is mainly prepared by MOCVD, and the epitaxial structure does not contain high-concentration P-type doping. The P-type InP or InGaAs ohmic contact layer required for device production is completed by various forms of Zn diffusion. Zn The traditional methods of diffusion include the closed tube diffusion method and the open tube diffusion method. The sample is in a closed or open quartz boat, and ZnAs and ZnP saturated vapor are used as the diffusion source. The advantage of the two methods is that the diffusion e...

Claims

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