Preparation method of high-purity zinc phosphide

A zinc phosphide, high-purity technology, applied in phosphide and other directions, can solve the problems of high investment cost, products can not meet high-purity requirements, and low yield of vacuum thermal decomposition method, and achieve the effect of high yield

Active Publication Date: 2014-08-06
峨嵋半导体材料研究所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved in the present invention is: for combustion method, ZnP 2 The vacuum pyrolysis method has the defects of low yield, high investment cost, and products that cannot meet the high-purity requirements. Design a set of high-purity zinc phosphide preparation methods that can produce high-purity zinc phosphide on a large scale

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1, a kind of preparation method of high-purity zinc phosphide, comprises the steps:

[0041] 1) Quartz tube pretreatment:

[0042] To clean the quartz tube, first wash it with alkaline water, wash it with high-purity water until it is neutral, then soak it in aqua regia for 24 hours, and then wash it with high-purity water until it is neutral. Before loading, pre-coat a layer of carbon film on the inner wall of the quartz tube; pre-coat carbon The film method is to use high-purity argon to transport acetone vapor into the quartz tube at a constant temperature of 900 ° C, and the acetone is cracked to coat the quartz tube with a carbon film. The length of the quartz tube is 60 cm, the diameter is 40 mm, and the thickness of the tube wall is 3 mm.

[0043] 2) Ingredients:

[0044] 21) Raw material preparation: pick a red phosphorus block with a diameter of 5-7mm and a purity of 6N into a ground glass bottle, and fill the bottle with argon gas with a purity of 5N as a pr...

Embodiment 2

[0053]1, a kind of preparation method of high-purity zinc phosphide, comprises the steps:

[0054] 1) Quartz tube pretreatment:

[0055] To clean the quartz tube, first wash it with alkaline water, wash it with high-purity water until it is neutral, then soak it in aqua regia for 24 hours, and then wash it with high-purity water until it is neutral. Before loading, pre-coat a layer of carbon film on the inner wall of the quartz tube; pre-coat carbon The film method is to use high-purity argon to transport acetone vapor into the quartz tube at a constant temperature of 1100 ° C, and the acetone is cracked to coat the quartz tube with a carbon film. The length of the quartz tube is 60 cm, the diameter is 40 mm, and the thickness of the tube wall is 3 mm.

[0056] 2) Ingredients:

[0057] 21) Raw material preparation: Pick a red phosphorus block with a diameter of 8-10mm and a purity of 6N into a ground glass bottle, and fill the bottle with argon with a purity of 5N as a prote...

Embodiment 3

[0066] 1, a kind of preparation method of high-purity zinc phosphide, comprises the steps:

[0067] 1) Quartz tube pretreatment:

[0068] To clean the quartz tube, first wash it with alkaline water, wash it with high-purity water until it is neutral, then soak it in aqua regia for 24 hours, and then wash it with high-purity water until it is neutral. Before loading, pre-coat a layer of carbon film on the inner wall of the quartz tube; pre-coat carbon The film method is to use high-purity argon to transport acetone vapor into the quartz tube at a constant temperature of 1000 ° C, and the acetone is cracked to coat the quartz tube with a carbon film. The length of the quartz tube is 60 cm, the diameter is 40 mm, and the thickness of the tube wall is 3 mm.

[0069] 2) Ingredients:

[0070] 21) Raw material preparation: Pick a red phosphorus block with a diameter of not more than 7mm and a purity of 6N into a ground glass bottle, and fill the bottle with argon with a purity of 5...

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Abstract

The invention discloses a preparation method of high-purity zinc phosphide, comprising the following steps: 1) quartz tube pretreatment, 2) batching, 3) tube sealing, 4) high-temperature synthesis, 5) product treatment, the invention uses high-purity phosphorus and high-purity Zinc direct conversion and production of high-purity zinc phosphide, the main reaction process occurs after the temperature reaches the melting point of zinc, actually belongs to the reaction between steam, belongs to the direct synthesis of elements, the requirements for the form of raw materials are not very strict, and the raw materials have not been processed , to meet the requirements of high purity, the present invention controls the internal pressure of the tube through temperature control operations such as slow temperature rise, constant temperature, and slow temperature drop, and distributes the length of the heating area and condensation area of ​​the synthetic quartz tube to successfully control the phosphorus vapor pressure in the quartz tube to achieve a large amount of The safe synthesis of zinc phosphide; through the control of the length of the condensation area and the heating area, a higher yield of the product is achieved. The product is used in the application fields of optoelectronic device production, diffusion source, and nanomaterials.

Description

Technical field [0001] The present invention involves a preparation method for high -purity zinc. Background technique [0002] High -purity zinc is a type of II -V semiconductor material with a prohibited bandwidth of 1.5EV.In recent years, zinc phosphate materials are attracting high attention. At the same time, compound semiconductors such as gallium arsenide and phosphate are indispensable semiconductor materials in the field of modern wireless communication and optical communication.In the process of phosphate and other devices, high -purity zinc phosphate is often used as the diffusion source.Zinc phosphate is one of the semiconductor materials that are currently actively engaged in application research, including application research on solar cells and single -dimensional nano -devices. Therefore, with the continuous expansion of its application field, the demand for zinc phosphate materials will also beIt will increase in large quantities and optimistic development prospe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B25/08
Inventor 段榆忠詹科华鹏
Owner 峨嵋半导体材料研究所
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