Preparation method of high-purity zinc phosphide

A zinc phosphide, high-purity technology, applied in phosphide and other directions, can solve the problems of high investment cost, products can not meet high-purity requirements, and low yield of vacuum thermal decomposition method, and achieve the effect of high yield

Active Publication Date: 2013-03-27
峨嵋半导体材料研究所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved in the present invention is: for combustion method, ZnP 2 The vacuum pyrolysis method has the defects of low yield, high investment cost, and products that cannot meet the high-purity requirements. Design a set of high-purity zinc phosphide preparation methods that can produce high-purity zinc phosphide on a large scale

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] 1, a kind of preparation method of high-purity zinc phosphide, comprises the steps:

[0042] 1) Quartz tube pretreatment:

[0043] To clean the quartz tube, first wash it with alkaline water, wash it with high-purity water until it is neutral, then soak it in aqua regia for 24 hours, and then wash it with high-purity water until it is neutral. Before loading, pre-coat a layer of carbon film on the inner wall of the quartz tube; pre-coat carbon The film method is to use high-purity argon to transport acetone vapor into the quartz tube at a constant temperature of 900 ° C, and the acetone is cracked to coat the quartz tube with a carbon film. The length of the quartz tube is 60 cm, the diameter is 40 mm, and the thickness of the tube wall is 3 mm.

[0044] 2) Ingredients:

[0045] 21) Raw material preparation: Pick a red phosphorus block with a diameter of 5-7mm and a purity of 6N into a ground glass bottle, and fill the bottle with argon gas with a purity of 5N as a pr...

Embodiment 2

[0055] 1, a kind of preparation method of high-purity zinc phosphide, comprises the steps:

[0056] 1) Quartz tube pretreatment:

[0057] To clean the quartz tube, first wash it with alkaline water, wash it with high-purity water until it is neutral, then soak it in aqua regia for 24 hours, and then wash it with high-purity water until it is neutral. Before loading, pre-coat a layer of carbon film on the inner wall of the quartz tube; pre-coat carbon The film method is to use high-purity argon to transport acetone vapor into the quartz tube at a constant temperature of 1100 ° C, and the acetone is cracked to coat the quartz tube with a carbon film. The length of the quartz tube is 60 cm, the diameter is 40 mm, and the thickness of the tube wall is 3 mm.

[0058] 2) Ingredients:

[0059] 21) Raw material preparation: Pick a red phosphorus block with a diameter of 8-10mm and a purity of 6N into a ground glass bottle, and fill the bottle with argon with a purity of 5N as a prot...

Embodiment 3

[0068] 1, a kind of preparation method of high-purity zinc phosphide, comprises the steps:

[0069] 1) Quartz tube pretreatment:

[0070] To clean the quartz tube, first wash it with alkaline water, wash it with high-purity water until it is neutral, then soak it in aqua regia for 24 hours, and then wash it with high-purity water until it is neutral. Before loading, pre-coat a layer of carbon film on the inner wall of the quartz tube; pre-coat carbon The film method is to use high-purity argon to transport acetone vapor into the quartz tube at a constant temperature of 1000 ° C, and the acetone is cracked to coat the quartz tube with a carbon film. The length of the quartz tube is 60 cm, the diameter is 40 mm, and the thickness of the tube wall is 3 mm.

[0071] 2) Ingredients:

[0072] 21) Raw material preparation: Pick a red phosphorus block with a diameter of not more than 7mm and a purity of 6N into a ground glass bottle, and fill the bottle with argon with a purity of 5...

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Abstract

The invention discloses a preparation method of high-purity zinc phosphide, which comprises the following steps of: 1) quartz tube pretreatment; 2) dosing; 3) tube sealing; 4) high-temperature synthesis; and 5) product treatment. According to the invention, high-purity phosphorus and high-purity zinc are directly combined to produce high-purity zinc phosphide, the main reaction process is carried out after the temperature reaches the melting point of zinc, the reaction is actually a steam reaction, and the method is an element direct synthesis method; the requirements for the form of raw materials are not very strict; the raw material is not processed, and the requirement for high purity is met; the pressure in a tube is controlled through temperature control operations such as slow heating, constant temperature, slow cooling and the like; the phosphorus steam pressure in the quartz tube is successfully controlled through length allocation of a heating area and a condensation area for synthesizing a quartz tube, and safe synthesis of a large amount of zinc phosphide is realized; and relatively high yield of a product is realized by controlling the length of the condensation area and the heating area, and the product is applied to the application fields of photoelectric device manufacturing, diffusion sources, nano materials and the like.

Description

technical field [0001] The invention relates to a preparation method of high-purity zinc phosphide. Background technique [0002] High-purity zinc phosphide is a II-V semiconductor material with a band gap of 1.5ev. In recent years, zinc phosphide materials have been highly concerned by people, and compound semiconductors such as gallium arsenide and indium phosphide are indispensable semiconductor materials in the field of modern wireless communication and optical communication. In device technology such as indium phosphide, high-purity zinc phosphide is often used as a diffusion source. Zinc phosphide is one of the semiconductor materials that countries are currently actively investing in applied research, including applied research on solar cells and single-dimensional nanodevices. Therefore, with the continuous expansion of its application fields, the demand for zinc phosphide materials will also increase. There will be a large increase, and the development prospect is...

Claims

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Application Information

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IPC IPC(8): C01B25/08
Inventor 段榆忠詹科华鹏
Owner 峨嵋半导体材料研究所
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