Preparation method of high-purity zinc phosphide
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 峨嵋半导体材料研究所
- Publication Date
- 2013-03-27
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Abstract
Description
technical field
[0001] The invention relates to a preparation method of high-purity zinc phosphide. Background technique
[0002] High-purity zinc phosphide is a II-V semiconductor material with a band gap of 1.5ev. In recent years, zinc phosphide materials have been highly concerned by people, and compound semiconductors such as gallium arsenide and indium phosphide are indispensable semiconductor materials in the field of modern wireless communication and optical communication. In device technology such as indium phosphide, high-purity zinc phosphide is often used as a diffusion source. Zinc phosphide is one of the semiconductor materials that countries are currently actively investing in applied research, including applied research on solar cells and single-dimensional nanodevices. Therefore, with the continuous expansion of its application fields, the demand for zinc phosphide materials will also increase. There will be a large increase, and the development prospect is...