Preparation method of InP/ZnS (indium phosphide/zinc sulfide) core-shell structure quantum dots

A technology of core-shell quantum dots and core-shell structure, which is applied in the field of preparation of InP/ZnS core-shell quantum dots, can solve the problems of easily polluting toxic substances, expensive phosphorus sources, etc., and achieve excellent optical purity and brightness, fluorescence Effect of high quantum yield and high film formation yield

Inactive Publication Date: 2017-12-22
NANCHANG HANGKONG UNIVERSITY
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Problems solved by technology

However, due to the high price of phosphorus sources and the easy generation of polluting and toxic subst

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  • Preparation method of InP/ZnS (indium phosphide/zinc sulfide) core-shell structure quantum dots
  • Preparation method of InP/ZnS (indium phosphide/zinc sulfide) core-shell structure quantum dots
  • Preparation method of InP/ZnS (indium phosphide/zinc sulfide) core-shell structure quantum dots

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preparation example Construction

[0029] (1) Preparation of phosphorus source: Take 100g of red phosphorus in an Erlenmeyer flask, one U-shaped tube is connected to the upper port of the Erlenmeyer flask, and the other is connected to a 250ml two-necked round-bottomed flask, and the round-bottomed flask is placed in a container A mixture of acetone and dry ice is used to gasify P4 red phosphorus, heated to 350°C, and kept at the temperature for 4.5 hours under vacuum;

[0030] (2) For further purification, the obtained product is sublimated, slowly heated to 100°C and vacuumed. This sublimation process is used three times to improve the purity of P4; the final P4 solid is obtained; be cautious when P4 is exposed to air It will spontaneously oxidize when exposed to high temperature. Therefore, all synthetic processes to produce P4 must be carried out in a glove box in an inert atmosphere; moreover, to synthesize P4, after P4 conversion, it should be stored in the dark; when exposed to light, it slowly turns yel...

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Abstract

The invention discloses a preparation method of InP/ZnS (indium phosphide/zinc sulfide) core-shell structure quantum dots. The preparation method comprises a preparation method of InP-series core-shell quantum dots and a synthesis method of the InP/ZnS core-shell structure quantum dots; the preparation method of InP-series core-shell quantum dots is used for preparation of a phosphorus source; the synthesis method is used for preparing an indium precursor with indium iodide as a quantum dot, and the InP/ZnS core-shell structure quantum dots are obtained with P4 as the phosphorus source, dodecanethiol as an S source, 1-octodecene as a stabilizer, oleylamine as a solvent reactant and a ligand as well as zinc oleate as a zinc source of a coated shell structure; centrifugal separation and purification are performed after the reaction is performed; pure InP/ZnS core-shell structure quantum dots are dispersed in octane again; the purified quantum dots are assembled into a QLED (quantum dot light-emitting diode) light emitting device. The preparation method has the advantages as follows: the yield of organic phase synthesized quantum dots is high, the fluorescent yield of a film is high, the quantum dots have uniformly distributed sizes, luminescent spectra are symmetric and narrow, and the cost is greatly reduced by use of the cheap phosphorus source.

Description

technical field [0001] The invention relates to a preparation method of InP / ZnS core-shell structure quantum dots. Background technique [0002] Nanomaterials with a size of less than 100nm exhibit excellent physical properties due to their unique quantum size effect, macroscopic quantum tunneling effect, quantum size effect and surface effect, which has led to increasing research by major research institutes and universities. Quantum dots generally have the characteristics of full-band adjustable preparation, high color purity, and good biocompatibility. Among them, InP series core-shell quantum dots play an important role in the field of non-toxic biological and display lighting. It is regarded as the most important quantum dot material to replace the traditional highly toxic and heavily polluting cadmium-based quantum dots currently on the market. However, because the phosphorus source is expensive and polluting and toxic substances are likely to be produced during the ...

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Application Information

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IPC IPC(8): C09K11/70B82Y20/00B82Y40/00H01L33/50
CPCB82Y20/00B82Y40/00C09K11/703H01L33/502
Inventor 金肖张虚谷纪丽珊蒋杰王凛烽
Owner NANCHANG HANGKONG UNIVERSITY
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