InP (indium phosphide) wafer thinning and polishing method and chemical corrosion device

Abstract

The invention provides an InP (indium phosphide) wafer thinning and polishing method and a chemical corrosion device. The thinning and polishing method comprises the following steps of S1, physical grinding: putting an InP wafer on a grinding disc, physically grinding, and thinning the InP wafer from 300-500mu m to 180-240mu m; S2, chemical corrosion: putting the physically ground InP wafer into the chemical corrosion device, and chemically corroding in concentrated hydrochloric acid; S3, chemical and mechanical polishing: putting the chemically corroded InP wafer on nylon lint cloth, and chemically and mechanically polishing. The thinning and polishing method has the advantages that the high-efficiency thinning and polishing method combining physical grinding and chemical corrosion is proposed; the problems of low rate, more surface scratches, easiness in cracking in the thinning process, and the like in the existing InP wafer thinning and polishing method are solved.

Description

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AI Technical Summary

Benefits of technology

The technical effects provided by this new technology include that it provides an efficient way for making very small crystals while avoids damaging certain materials on these tiny semiconductor devices (InP). This technique combines two techniques - Physical Grinding or Chemistry Etched. It achieves better results than previous methods due to its faster processing time, less damage from scratched surfaces, and easier handling compared to other processes like mechanical abrasion.

Problems solved by technology

Technological Problem: This patented technical issue addressed by the patents relates to improving the manufacturing process of Inp Phoswich films that use InP or GaAlN substrate technology due to its potential applications in various industries like electronics and optoelectronics. Current solutions involve grinding off surfaces from these types of substrates before they can be applied onto them again. These techniques have limitations because their effectiveness depends heavily upon how well the Surface Chemistry Behavior works properly during the final step.

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