InP (indium phosphide) wafer thinning and polishing method and chemical corrosion device

A technology of thinning polishing and chemical corrosion, which can be used in grinding devices, grinding/polishing equipment, machine tools with surface polishing, etc., and can solve the problems of low production efficiency, slow thinning rate, and increased surface scratches.
CN106346318AInactive Publication Date: 2017-01-25SUZHOU EVERBRIGHT PHOTONICS CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
SUZHOU EVERBRIGHT PHOTONICS CO LTD
Publication Date
2017-01-25
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention provides an InP (indium phosphide) wafer thinning and polishing method and a chemical corrosion device. The thinning and polishing method comprises the following steps of S1, physical grinding: putting an InP wafer on a grinding disc, physically grinding, and thinning the InP wafer from 300-500mu m to 180-240mu m; S2, chemical corrosion: putting the physically ground InP wafer into the chemical corrosion device, and chemically corroding in concentrated hydrochloric acid; S3, chemical and mechanical polishing: putting the chemically corroded InP wafer on nylon lint cloth, and chemically and mechanically polishing. The thinning and polishing method has the advantages that the high-efficiency thinning and polishing method combining physical grinding and chemical corrosion is proposed; the problems of low rate, more surface scratches, easiness in cracking in the thinning process, and the like in the existing InP wafer thinning and polishing method are solved.
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Claims

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