Device for facilitating control of substrate temperature in diamond synthesis equipment

Abstract

The invention provides a device for facilitating control of a substrate temperature in diamond synthesis equipment. The device comprises a substrate table and a substrate, the top of the substrate table is provided with a plurality of first heat conducting rods, the substrate is supported on the substrate table by the first heat conducting rods, and the cross sections of the first heat conductingrods are of polygonal structures. By arranging a plurality of the first heat conducting rods between the substrate table and the substrate for supporting, a worker can change the thermal conductivitybetween the substrate table and the substrate by changing the number of the first heat conducting rods, thereby achieving reasonable control of the heat dissipation capability of the substrate, sincethe cross sections of the first heat conducting rods are of the polygonal structures, no relative sliding occurs between the substrate table and the substrate, so that the thermal conductivity betweenthe substrate table and the substrate is away stable after the first heat conducting rods are well placed, and the control effect of the heat dissipation capability of the substrate is more reproducible. The device is applied to the field of the diamond synthesis equipment.

Description

technical field [0001] The invention relates to the field of diamond synthesis equipment, in particular to a device for conveniently controlling the substrate temperature in the diamond synthesis equipment. Background technique [0002] Diamond has attracted everyone's attention due to its excellent physical and chemical properties. However, natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure (HPHT), hot wire chemical vapor deposition (HJCVD), microwave plasma chemical vapor deposition (MPCVD). Among them, the microwave plasma chemical vapor deposition (MPCVD) synthetic diamond method is the most effective method for synthesizing high-quality, large-area diamond because there is no introduction of impurities. Schematic diagram of the synthesis of diamond by Microwave plasma chemical vapor deposition (Microwave plasma chemical vapor deposition) figure 1 shown. [0003] Such as f...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problem that the heat dissipation ability of the substrate cannot be reasonably controlled in the prior art, the present invention provides a device for conveniently controlling the temperature of the substrate in the diamond synthesis equipment, which can control the heat dissipation ability of the substrate more reasonably, and has a higher repeatability

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