Tungstic acid thin film air-sensitive sensor surface modifying method
A gas sensor, tungsten trioxide technology, applied in the field of gas sensors, can solve the problems of high working temperature, poor selectivity, long recovery time, etc., achieve the effect of uniform thickness, improved gas sensing performance, and increased selectivity
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[0019] Example 1
[0020] 1) Use Al with a thickness of 350μm, a length of 2.5cm and a width of 1.0cm 2 O 3 The ceramic substrate is ultrasonically cleaned with acetone for 10 minutes, rinsed with deionized water, then ultrasonically cleaned with absolute ethanol for 10 minutes, then rinsed with deionized water, and dried at 50°C for use; 2) Al after drying 2 O 3 An iron interdigital mask with a thickness of 100 μm is closely attached to the ceramic substrate. Masked Al 2 O 3 The substrate is placed in the vacuum chamber of the DPS-III type ultra-high vacuum opposed target magnetron sputtering equipment. The metal platinum with a mass purity of 99.95% is used as the target, and the argon with a mass purity of 99.999% is used as the working gas. The specific steps of controlled sputtering are: pump the background vacuum to 2.5×10 -4 Pa, argon gas flow rate is 25ml / min, sputtering working pressure is 2.0Pa, sputtering power is 80W, sputtering time is 7 minutes, substrate temperature...
Example Embodiment
[0021] Example 2
[0022] This embodiment is similar to embodiment 1, except that: in step 4), the sputtering time of metallic titanium is 20 min, and a titanium oxide layer with a thickness of 0.06 μm is obtained on the surface of the tungsten trioxide layer. The prepared tungsten trioxide thin film gas sensor is tested for sensitivity, and the relationship curve between sensitivity and operating temperature is shown in curve 1 in Figure 3. It can be seen from Figure 3 that not only the operating temperature of the tungsten trioxide thin film gas sensor is greatly reduced, but also the sensitivity is greatly improved.
Example Embodiment
[0023] Example 3
[0024] This embodiment is similar to embodiment 1, except that in step 4), the working pressure of titanium sputtering is 0.5Pa, the sputtering time is 15min, the flow of argon gas is 22ml / min, and the result is obtained on the surface of the tungsten trioxide layer. A titanium oxide layer with a thickness of 0.04 μm.
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