The invention provides a method for forming an IGBT
electric field stop layer, and relates to the technical field of IGBT processes. The method for forming the IGBT
electric field stop layer comprises the following steps: S1, preparing a substrate; s2, growing a
gate oxide layer; s3, polycrystal deposition and photoetching are carried out; s4, injecting a P-type
body region; s5, propelling a P-type
body region; s6, performing N + injection and propulsion; s7, depositing a
dielectric layer; s8, performing
contact hole photoetching and
metal sputtering; s9, injecting a P-type collector region on the back surface; s10, annealing a collector region on the back surface; s11, high-energy protons are injected into the back surface for many times; s12, performing high-energy
proton injection annealing; and S13, back collector
electrode metal sputtering is carried out. According to the method, high-energy
proton injection is carried out for many times, then annealing is carried out at the temperature of 350-450 DEG C and under the N2 condition, N-type
impurity distribution with the thickness of 20-50 microns is formed on the back face of the IGBT, and therefore the function of an
electric field stop layer is achieved, due to the fact that the number of electrons in the thick electric field stop layer is large, the current cannot suddenly drop to zero when the IGBT is turned off, and oscillation of the IGBT cannot be caused.