5 results about "High energy proton" patented technology

The invention discloses a GEO and SSO cross-platform satellite high-energy proton data collaborative calibration method based on a solar proton event, and the method comprises the steps: obtaining high-energy proton observation data and space environment disturbance parameter data of GEO and SSO, and carrying out the preprocessing, and obtaining high-energy proton data, satellite space-time position data and environment parameters of a unified flux type; screening high-energy proton data during the event period according to the sun proton event definition to obtain a plurality of event data sets and grouping the event data sets; performing alignment processing on the screened high-energy proton data of the GEO and the SSO; based on the power law spectrum characteristics of the solar proton event, constructing the energy matching relation of each energy channel of GEO and SSO, and determining the effective energy and energy interval of each energy channel of SSO through point-by-point spectrum fitting and statistical inversion; and recalculating the differential flux of the GEO in a corresponding energy channel by using the calibrated effective energy, establishing a point-by-point scatter matrix of the two types of satellite data, and performing linear fitting and correlation analysis to realize calibration.

This invention provides a Dunaliella salina mutant strain DS-HC01, which exhibits both rapid growth and high carotenoid accumulation capabilities, with the preservation number CCTCC NO: M 2026726. The mutant strain was obtained through high-energy proton beam mutagenesis at 300 MeV and a dose of 100 Gy, followed by three-stage screening. Under 25°C culture conditions, DS-HC01 overcomes the trade-off between growth and product accumulation, achieving a cell density more than 1.2 times that of the wild type on day 10, and a total carotenoid content more than 1.25 times higher. It also exhibits higher SOD activity and lower MDA content, demonstrating extremely strong antioxidant regulation capabilities and synergistic advantages in growth and pigment accumulation, making it suitable for efficient fermentation production of carotenoids.

This invention relates to a method for generating a high-purity Ac-225 radioactive beam based on an online isotope separator. A high-energy proton beam with an energy of 100 MeV is generated using a cyclotron accelerator. This high-energy proton beam is transmitted to an ISOL target chamber and bombards a thorium carbide target within the chamber, causing a nuclear reaction. Atoms produced in the nuclear reaction escape from the target and interact with a specific wavelength of incident laser light, resulting in stimulated ionization. The stimulated ionized radioactive nuclear beam is extracted by a high-voltage ion source and then transmitted via a beam transport system to a pre-analytical magnet. The radioactive nuclear beam undergoes preliminary separation by the pre-analytical magnet. After preliminary separation, the radioactive nuclear beam is further accelerated by a high-voltage accelerator tube and then further separated by the main analytical magnet to improve the purity of the beam. Compared with radiochemical separation methods, this invention offers higher separation efficiency and a shorter separation cycle, yielding Ac-225 with a purity exceeding 99%. Further purification is expected to meet the requirements of clinical trial standards.

The invention discloses a LiF target preparation process based on interface diffusion anchoring, which comprises the following steps: preheating a metal substrate to 200-300 DEG C, depositing a LiF film on the surface of the substrate through a vacuum evaporation process, and carrying out in-situ annealing to obtain a LiF target with high chemical purity, high surface uniformity and high film-substrate binding force. According to the method, the substrate preheating process is introduced, the mutual diffusion capacity between LiF molecules deposited on the surface of the substrate and substrate metal atoms is improved, the vacuum evaporation process parameters of the LiF film are integrally optimized, it is ensured that the LiF molecules have enough time to be mutually dissolved and expanded with the substrate metal atoms before cooling, and crystallization rearrangement is completed; therefore, a firm diffusion anchoring interface structure is formed, and the film-substrate binding force is remarkably enhanced. By introducing an in-situ annealing process, thermal stress generated due to mismatch of thermal expansion coefficients between the LiF film layer and the substrate is released, and it is ensured that the film layer of the LiF target is not prone to falling off under high-energy proton bombardment.

The invention discloses a method for evaluating high-energy proton irradiation damage of a back gate CNT (carbon nano-tube) device, and the method comprises the steps: introducing a charge deposition layer, namely a CNT / charge deposition layer / SiO2 / P-Si structure, which is used for generating a capturing effect of an interface trap through reaction proton irradiation into a device structure; accurate estimation and evaluation of high-energy proton radiation damage and output characteristic influence of the back gate CNT device are realized. The specific process of damage evaluation is as follows: 1, constructing a back gate CNT device simulation model containing a charge deposition layer; 2, electrical parameters of a charge deposition layer and other components in the model are adjusted, and output characteristics of the device are accurately simulated; 3, simulating the influence of proton irradiation on electrical parameters of the charge deposition layer and other components; and 4, substituting the electrical characteristics of the irradiated charge deposition layer and other components into the device simulation model in the process 1, simulating the output characteristics of the device, and evaluating the damage of the high-energy proton irradiation to the back gate CNT device and the influence of the high-energy proton irradiation on the output performance of the back gate CNT device. According to the damage assessment method, the charge deposition layer is introduced to reflect the capture effect of an interface trap generated by proton irradiation, a simulation result is matched with an experimental result, accurate prediction of irradiation damage of the back gate CNT device is achieved, and understanding of a micro-level damage mechanism is deepened.