65 results about "Heavy ion irradiation" patented technology

The invention relates to the field of radioactive nuclear beam physics, heavy ion beam cancer treatment, heavy ion irradiation materials and heavy ion irradiation breeding. A position sensitive detector for higher energy heavy ion beam diagnosis is mainly characterized in that a beam probe is arranged in an air seal cavity, and the beam probe is fixedly connected to a fixing support of a port sealing flange assembly. The air seal cavity comprises an incidence window arranged on one side of an air box and an exitance window arranged on the other side of the air box. The beam probe is composed of two beam measuring units. Each beam measuring unit is composed of a high voltage pole, an insulating cushion plate and a signal pole which are sequentially arranged. The port sealing flange assembly is composed of the fixing support and a port sealing flange. A multichannel signal leading out pin board comprises a multichannel signal leading out board and a multichannel signal pin board. A contact end is arranged at one end of the multichannel signal pin board, inserted into a sealing opening of a sealing flange, and is connected with the signal output end of the multichannel signal leading out board. A multi-core connector is arranged at the other end of the multichannel signal pin board and serves as a signal output end opening of the beam position sensitive device. The signal input end of the multichannel signal leading out board is connected with the signal poles of the beam probe.

The invention discloses a system level single event effect influence representation parameter and evaluation method. The method comprises the steps that a system function model with a component as a bottom event is built, and a system single event effect influence function model is built by means of component single event sensitivity analysis; on the basis of single event effect test data, the single event rate of the sensitive component is calculated and analyzed, fault injection or a heavy ion irradiation test method or a system historical data analysis method is adopted for determining single event effect influence transfer factors between layers; on the basis of the single event superposition principle, the system single event rate is calculated; the system single event effect criticality and usability are calculated. The quantitative method is used for representing the influences of the single event effect on the system, the influence result of the system single event effect is evaluated, and the method can be used for guiding the quantization control over the system level single event effect risk.

The invention discloses a method for verifying a single particle soft error protection design based on a heavy ion accelerator, and relates to the field of heavy ion and proton equivalent test verification of system single particle protection effect verification based on accelerator test data. The method includes the following steps: (1) adopting a ground accelerator heavy ion test which is determined on the basis of a LET value; (2) analyzing a proton static overturning cross section; (3) analyzing a sensitive bit factor of the system under any working mode; (4) analyzing a dynamic overturning cross section of the system under heavy ion radiation; (5) analyzing a dynamic overturning cross section of the system under proton radiation. The invention provides a method for verifying a single particle soft error protection design based on the heavy ion accelerator. The method can be intended for verifying single particle protection effects, and address the problems of tight time of domestic accelerators and difficulty in realizing high energy proton tests.

The invention relates to a production method of sweet sorghum juice liquor. The method comprises the following steps: (1) crushing and squeezing sweet sorghum straw after harvesting to respectively obtain sweet sorghum juice and residue A; (2) performing steam indirect heating sterilization on the sweet sorghum juice, then filtering and removing impurities to respectively obtain a filtrate and residue B; and mixing the residue B with the residue A to be used as an ensiling raw material; (3) wetting the ensiling raw material, then spraying a fermenting agent, and performing closed anaerobic fermentation to obtain ensilage; (4) inoculating flavor-producing yeast original bacteria bred by heavy ions into a wort culture medium, performing culture by a shaking table, and then inoculating into a sweet sorghum juice culture medium to obtain a flavor-producing yeast strain; (5) inoculating the flavor-producing yeast strain into a fermentation tank placing filtrate, and performing anaerobic fermentation to obtain a mature mash; (6) distilling and grading the mature mash after fermentation for taking the liquor and obtaining the sweet sorghum liquor with the alcohol degree of 50-68 degrees; and (7) performing heavy ion irradiation aging acceleration, degree reduction and activated carbon treatment on the sweet sorghum liquor with the alcohol degree of 50-68 degrees, and packaging after passing a test. The production method disclosed by the invention has the advantages of simple process and easiness in industrial production.

The invention relates to a method and a device for predicting single event effects. According to the single event effect prediction method, through acquiring not less than five single event effect cross sections-ion LET value data points of a to-be-detected device under heavy ion irradiation, Weibull function curve fitting is carried out on the single event effect cross sections-ion LET value data points to obtain a Weibull curve, the Weibull curve is stepped, parameters of each sensitive region, collection factors and threshold charge of a sensitive unit are calculated and obtained, and according to parameters of all sensitive regions of the sensitive unit, the collection factors and deposited energy, collection charge of the sensitive unit is calculated; and when the collection charge is larger than or equal to the threshold charge, prediction of single event effects happening to the to-be-detected device is carried out. The obtained sensitive region model obtained in the method comprises at least one sensitive region, each sensitive region considers sensitivity differences inside a single sensitive unit, and thus, the sensitive region model is used for accurately predicting when the single event effects happens to the to-be-detected device in corresponding experiment and application environments.

The invention relates to a preparation method for a nuclear pore filtering film and particularly relates to the nuclear pore filtering film with an hourglass type pore channel shape. The invention provides an hourglass type pore channel nuclear pore filtering film and a preparation method thereof. The preparation method comprises the following steps: radiating a PET (Polyethylene Terephthalate) or PC (Polycarbonate) thin film by heavy ions provided by a high-energy accelerator to form a latent trace; selecting a NaOH etching solution and carrying out pre-etching on a radiated polymer thin film; putting the film into a constant-temperature box with a certain temperature and annealed; finally, etching by using a NaOH solution. The hourglass type pore channel nuclear pore filtering film comprises a nuclear pore which is formed on the polymer thin film by radiating and etching through the heavy ions; the section of a pore channel of the nuclear pore is similar to an hourglass shape. The polymer thin film is the PET/PC thin film; the thickness is 10-30 microns; the range of the pore diameter of an outer pore is 2-10 microns and the range of the pore diameter of an inner pore is 0.2-3 microns. Compared with columnar and tapered pore shapes, an hourglass type pore channel can improve the filtering speed except the previous filtering precision is kept; meanwhile, the dirt containing capability of the nuclear pore filtering film is improved and the nuclear pore filtering film is not easy to block, so that the filtering performance of the nuclear pore filtering film is improved.

The invention discloses a preparation method of a graphene nano-hole which is supported by a micropore, belonging to the fields of application of heavy ion beams and processing of films. A porous graphene composite material supported by the micropore is mainly characterized by comprising monolayer graphene, wherein the monolayer graphene is arranged on a polymer film; a nanoscale hole is formed in the graphene, overlapped and communicated with a cone-shaped hole of the polymer film. Through the preparation method, a graphene/polymer film composite structure is irradiated by using high-energy heavy ions; a hole with the diameter being several nanometers is formed in the graphene by using irradiation damage effect of the heavy ions; meanwhile, a columnar damage area is formed in the polymer film; then an irradiated area of a polymer is etched to form a cone-shaped nano-hole by using a chemical etching method; since the position of the graphene hole is overlapped and communicated with the position of the cone-shaped hole of the polymer, the graphene nano-hole which is supported by the micropore can be obtained. Due to the support effect of the polymer micropore, the graphene nano-hole is wide in application prospet in rectification of the ions, filtration and screening of the ions and detection of biological molecules.

The invention discloses a non-destructive power MOS tube single-event burnout effect detecting circuit and a non-destructive power MOS tube single-event burnout effect detecting method. The circuit comprises a grid electrode biasing circuit, a drain electrode biasing circuit and a signal collecting circuit. The method includes the following steps that certain biasing is exerted on a power MOS tube. Currents of a source electrode of the MOS tube are detected under irradiation of heavy ions, and whether single-event burnout of the MOS tube occurs or not is judged through current variation curves. According to performance parameters of a MOS tube device, the source electrode and the drain electrode of the device performs current-limiting on a resistor and discharging and charging on a capacitor so as to keep currents of the source electrode within a detectable range when the single-event burnout happens. Meanwhile, the device is protected against burnout, so that the MOS tube will not be damaged and fail. The method is simple and repeated occurrence of the single-event burnout effect of a MOS tube can be detected. Meanwhile, the feature of being non-destructive is achieved.

The invention belongs to the anti false technical area including following procedures. The precoat film is made by pre coating the anticorrosive hot-melt adhesive on the anticorrosion plastic film. The plastic film exposed by the heavy ion becomes the irradiation film. The composite film is prepared by heating the precoat film and the irradiation film together. Then, the chemical etching makes the aperture of the heavy ion micropore in 3-5 mu m. After etching, with the precoat film being removed from the irradiation film covered, through the rinsing and baking processes, the anti-false film of the heavy oil is obtained. It is milk-white in the pattern area of the anti-false film and it keeps the original transparency in non-pattern area. The invention possesses the features of double-faced protection, the clear pattern, low cost and easy of preparing the precoat film in large scale.

The invention provides a heavy ion irradiation testing system for a signal processing platform. The system comprises a host computer which is used for data receiving, processing, storing and displaying and test process control, a power supply management unit which comprises a programmable power supply, an FPGA+DSP signal processing unit and a manage test unit. The programmable power supply is connected with the host computer, is used for powering the whole system, and feeds back the current of the system and devices to the host computer. The FPGA+DSP signal processing unit is used as a typical space application load signal processing platform, wherein FPGA is SRAM-FPGA and is used as a tested unit of a heavy ion irradiation test. The manage test unit comprises an FPGA and is used for system configuration, data acquisition and exceptional control in the test process. The system provided by the invention has the advantages of flexible architecture, flexible tested object, multiple test items, fast data transmission and the like.

The invention relates to a method for improving and modulating magnetoresistance of semi-metallic thin film materials by high-energy heavy ion irradiation, which adopts the following measures: (1) the film thickness of a semi-metallic thin film is controlled between 100 nanometers and 10 micrometers; (2) the type of irradiation heavy ions is Aq+, wherein A is selected from one of elements with the atomic numbers of 10-92, q+ is the number of charges stripped by an accelerator, and q is greater than or equal to 1 and is less than or equal to the atomic number of A; (3) the energy range of the irradiation heavy ions is between 100keV and 10GeV; and (4) the irradiation range of the irradiation heavy ions is between 1010ions/cm<2> and 1017ions/cm<2>. The method of the invention can obviously increase the grain insulating boundary and reduce the surface stress of semi-metallic thin film materials represented by Fe3O4 nano-polycrystalline thin films, can obtain high-quality barrier layers and barrier interfaces, can obviously improve the magnetoresistance at room temperature, and can enable the magnetoresistance to be capable of being modulated manually.

The invention relates to a method for screening biomarkers of ionizing radiation as well as an application of SZT2 protein determined by the method to preparation of a molecular biomarker kit for personnel exposed to heavy ion radiation. The method comprises the following steps: screening differentially expressed genes in human cells which are treated with heavy ion irradiation by using a genechip method; screening differentially expressed proteins in cells of the same type which are treated with heavy ion irradiation by using iTRAQ technology; comparing screening results, and from the genes and the proteins which are differentially expressed simultaneously, selecting differentially expressed protein SZT2 which is down-regulated both in gene and protein levels as the biomarker of ionizing radiation. The genechip method and iTRAQ technology are combined, categories and quantities of genes and proteins in cell specimens of experimental groups of different dosages and a control group are compared and analyzed, the differentially expressed protein SZT2 which is down-regulated both in gene and protein levels can be rapidly found, and the protein can be used as a significant biomarker of ionizing radiation.

The invention discloses a switching technique of multiple-typed plant, which is characterized by the following: switching plant seed irradiated by gamma-ray (dose: 0.01-10Gy; dose rate: 0.1-2Gy/h); germinating in the selective gene; testing; sieving instantaneous expressive seed of GUS gene; adopting positive seed as explant; obtaining regenerative plant on the culture medium; planting positive seed in the flowerpot or field directly for 3-5d; dripping 50-200 mul relative antibiotics with density at 50-250mg/l on the stem top until the flower bud forms; collecting seed; identifying the gene; planting positive material.

The invention discloses a method for analyzing latent track damage of a GaN HEMT device caused by heavy ions. The method comprises the following steps of calculating an energy loss parameter of the heavy ions in the GaN material by using the SRIM and obtaining a latent track map caused by the energy loss parameter. The method can accurately, quickly and conveniently realize the effect of analyzingthe latent track damage of the GaN HEMT device caused by heavy ions, thereby providing a research basis for reducing the influence of high-energy heavy ion irradiation in space on the GaN HEMT device.

The invention belongs to the technical field of irradiation measurement, and particularly relates to an irradiation on-line internal friction in-situ measurement device. The device comprises a sealed vacuum chamber (1) provided with a heavy ion beam pipeline (9), the interior of the vacuum chamber (1) is used for arranging an irradiation sample (12) and can heat the irradiation sample (12), an accelerated heavy ion beam can irradiate the interior of the irradiation sample (12) through the heavy ion beam pipeline (9), and the device further comprises a displacement detector (7) used for measuring the displacement change of the irradiation sample (12). The device realizes on-line in-situ measurement of the mechanical property of the material in a heavy ion irradiation experiment in a high-temperature environment, can visually obtain the change of the mechanical property of the material by measuring an internal friction spectrum in the irradiation process, and obtains the type, concentration and dynamic diffusion process of irradiation defects generated in the material irradiation process, and information of irradiation embrittlement, defect evolution and the like of the material under irradiation conditions such as temperature, irradiation dose and the like is obtained.

The invention relates to to a high-nitrogen yeast (particularly referring to Saccharomyces cerevisiae) and a preparation method thereof. Saccharomyces cerevisiae is preserved in China General Microbiological Culture Collection Center (CGMCC) with the preservation number of CGMCC No.5004; and Saccharomyces cerevisiae is obtained by heavy ion radiation mutation, the content of nitrogen in Saccharomyces cerevisiae is 40-60%. A heavy ion mutation technology has the following main advantages that (1) variation rate is high, generally 1000 times higher than natural variation rate; (2) variation spectrum is wide, namely type of variation is diverse, and a new type of microbe strain can be obtained; (3) variation stability is strong, relatively stable strains (coexistence of positive and negative mutations) can be obtained, and screening period can be shortened; and (4) mutation operability is strong, and the radiation mutation of the microbe can be easily completed.

The invention belongs to the technical field of agriculture, relates to a sweet sorghum breeding method, in particular to a method for breeding sweet sorghum by using a heavy ionmutation breedingtechnique. The sweet sorghum breeding method is mainly characterized by comprising the following steps: (1) performing heavy ion beam radiation, namely, providing carbon, oxygen or argon heavy ion beams by using a heavy ion accelerator, and performing radiation treatment on sweet sorghum seeds at a vertical radiation terminal for 4-6 minutes under the conditions that the energy is 80-100MeV/mu, the radiation dosage is 80-120Gy and the dosage rate is 20-30Gy/minute; (2) performing mutant screening; (3) performing mutant detection; (4) performing hybridized combination optimization. Due to the adoption of the breeding method provided by the invention, after heavy ion radiation, mutant planting resources which are good in precocity property, high in sweet, high in yield and resistant to adversity can be obtained, after being planted for M3-M4 generations, the mutants can be stabilized, and the efficiency of mutant screening, mutant detection and hybridized combination blending is increased by more than 10% when being compared with that of a single crossbreeding method.

The invention provides a method for preparing a single-photon light source and a component. The method comprises a step of arranging a two-dimensional film material on a substrate material, a step ofdetermining an irradiation position with the need of preparing the single-photon light source on the two-dimensional film material, a step of performing heavy ion irradiation on the irradiation position to cause collision of atoms in the two-dimensional film material to generate a displacement point defect, a step of performing high temperature annealing on the two-dimensional film material whichis subjected to heavy ion irradiation such that an isolated illuminating center is formed by the displacement point defect generated by the irradiation. The single-photon light source obtained by themethod has higher quality, the number of single photons can be effectively controlled by the heavy ion irradiation and a high temperature annealing method, the prepared single-photon light source hasgood uniformity, the light source spectrum is good, the full width at half maximum is small, and the background noise is low.

A transmission electron microscope micro-grid based on heavy ion irradiation is composed of a microporous polyethylene glycol terephthalate (PET) film obtained by etching with a sodium hydroxide solution after high-energy heavy ion irradiation, and a metal film plated on the PET film through magnetron sputtering or thermal evaporation or electron beam evaporation and the like. The thickness of thePET film is 5-30 [mu]m, and the thickness of the metal film is 5-30 nm. The polyethylene glycol terephthalate (PET) film is irradiated by using heavy ions, then is etched to form micropores with uniform and adjustable aperture, and the transmission electron microscope micro-grid with high porosity and conductivity is obtained through etching, magnetron sputtering, thermal evaporation or electronbeam evaporation coating. The prepared transmission electron microscope micro-grid takes a heavy ion track film as a template, and the template is covered with the metal film with adjustable thicknessand type. The micro-grid for the transmission electron microscope is composed of a plurality of micropore structures which are uniform in aperture and adjustable in size, the micropore structures arepure, and interference of metal grids in a traditional micro-grid on component analysis of a tested sample can be effectively eliminated, so the accuracy during testing can be improved.

The invention discloses a test method for simulating neutron irradiation at different fluence rates, relates to irradiation tests of materials and devices, and aims to solve the problems that performances of the materials and the devices are degenerated as displacement radiation damage caused by neutron irradiation easily forms displacement defects. According to the method, types and the fluence rates of heavy ions are selected, the materials and the devices are irradiated by the aid of the selected heavy ions, so that displacement damage degree generated by the materials and the devices is as same as that generated by neutron irradiation at the fluence rate to be simulated, the irradiation range of the selected heavy ions is twice larger than the thickness of the materials or the depth of active areas of the devices, the range of the fluence rate of the selected heavy ions ranges from 104ion/cm<2>*s to 109 ion/cm<2>*s when the requirements of a heavy ion accelerator are met, the types of the heavy ions are selected in the range, and displacement absorption dose generated by one heavy ion is minimum. According to the test method, displacement defect states generated by neutron irradiation at different fluence rates are achieved based on heavy ion irradiation, and in-situ detection of performance degradation is achieved.

The invention provides a preparation device and method for a nuclear track membrane. According to the preparation device and method, an original thin film with a latent track subjected to the heavy-ion irradiation is conveyed to the relative position of a spraying component by utilizing a transmission component, spraying and etching are carried out on the surface to be etched of the original thinfilm with the latent track by utilizing the spraying component, etching liquid is sprayed on the surface to be etched of the original thin film, so that the latent track is etched into pores, and therefore the nuclear track membrane is formed. The preparation device and method have the advantages that the target pore diameter is formed on the original thin film by using a spraying mode, and therefore the uniformity and the fluidity of the etching liquid are improved, the etching uniformity is effectively improved, and finally, the nuclear track membrane which is uniform in micropore distribution and uniform in pore diameter can be obtained.