The invention belongs to the technical field of semiconductors, and relates to a method for improving single-layer WSe2 second
harmonic signal intensity, which comprises the following steps of: preparing a single-layer WSe2 material; carrying out
heavy ion radiation on the single-layer WSe2 material to generate defects in the single-layer WSe2 material; by controlling the energy of the
heavy ion radiation, the defect concentration in the single-layer WSe2 material is controlled, so that the second
harmonic signal intensity of the single-layer WSe2 material is improved. Vacancy defects and tiny disordered regions are introduced into the material, and intrinsic enhancement is realized on the basis that intrinsic photoelectric characteristics of a single-layer material are not changed. Compared with an
external field regulation and control method, the defect caused by
ion irradiation is permanent structural change, once the defect is formed, the enhancement effect always exists and does not need to be maintained by continuously consuming energy, and the key requirements of non-volatile property and low
power consumption are met.