The invention discloses an anti-
radiation high-
voltage BJT (
Bipolar Junction Transistor) device and a manufacturing method thereof, and belongs to the technical field of
semiconductor power devices. The device comprises a P-type substrate, an N-type buried layer, an N-type deep well, a P-type deep well, a
shallow trench isolation oxide layer, an N-type well region, an N-type emitter region, a P-type well region, a P-type highly doped region, an N-type collector injection region, an N-type emitter injection region, a P-type base injection region, collector
metal,
base metal and emitter
metal. According to the method, the
mask plate of the P-type well region is repeatedly utilized, the P-type highly doped region is introduced to the surface of the P-type well region, and the influence of trap charges of an
oxide layer caused by
total dose radiation on the surface of the base region is weakened, so that the phenomenon that a
depletion region appears on the surface of the base region to cause the increase of
recombination current is prevented, and the degradation of a
common emitter current amplification coefficient of a device is inhibited; meanwhile, the device can be manufactured without additionally arranging a
mask plate, so that the anti-
radiation capability can be reinforced, and the manufacturing cost of the device can be saved at the same time.