The invention relates to a
physics-of-failure-based MOS (
metal oxide semiconductor) device reliability
simulation evaluation method. The method comprises the following steps: first, acquiring related parameters of an MOS device; second, analyzing a failure mode, a mechanism and an influence; third, establishing CFD (computational fluid dynamics), FEA (finite
element analysis) and failure prediction models; fourth, carrying out the
simulation analysis on temperature, vibration and electrical characteristics; fifth, performing stress
damage analysis; sixth, performing cumulative
damage analysis; seventh, considering deviation and performing parameter
randomization simulation; eighth, obtaining a time vector before a failure by utilizing a competition
failure mechanism; ninth, estimating the average starting failure time of the device. According to the method, a potential
failure mechanism and a corresponding failure
physical model of the device are obtained by analyzing, the using stress of the device is determined by simulating and analyzing, and finally, the average starting failure time of the MOS device under using conditions is obtained by calculating from the possible failure reasons of the MOS device on the basis of a failure physical theory. The method belongs to the technical field of MOS device reliability simulation and evaluation.