20 results about "Proton radiation" patented technology

The invention discloses an analysis and evaluation method for the risk of single event upset of an aerospace electronic device caused by a solar proton event, and the method comprises the following steps: S1, building a target model of the aerospace electronic device, and calculating the relation between the SEU section of the target device and the proton energy; s2, analyzing on-orbit proton radiation environment elements of the spacecraft, acquiring detection data and calculating the radiation flux of the SPE; s3, calculating measurement parameters of device single event upset caused by the SPE generation process; and S4, evaluating and grading the SEU risk caused by the SPE according to a calculation result. The SEU cross section of the electronic device is calculated by adopting a Monte Carlo method, and an inelastic energy deposition event of a sensitive area of the device caused by monoenergetic protons can be accurately obtained. According to the method, a basis can be accurately and effectively provided for troubleshooting and information error correction of the spacecraft, and the method can be directly applied to an existing on-orbit spacecraft.

In order to achieve higher fusion efficiency, the invention separates the process of fusion plasma compression and fusion ignition into two. Plasma compression is performed with whispering gallery mode radiation, typically laser radiation. The ignition of hot spots created by compression is performed by the solution according to the invention by direct irradiation, typically by direct proton radiation. One of the advantages of separating compression and rapid ignition is that less energy consumption is sufficient to create fusion than with other solutions, moreover, smaller energy shocks do not break the hydrodynamic stability of the plasma, so the fusion is more efficient.

The present disclosure provides a method for calculating a proton radiation dose in a magnetic field, comprising: determining a position of an exit source and a velocity and energy of a pencil beam at the exit source; upon a proton beam being emitted from the exit source, determining, in chronological order, a plurality of candidate boxes according to the position of the exit source, the velocity and energy of the pencil beam at the exit source, and information of the magnetic field, and sequentially calculating a position of an intersection point between the pencil beam and a surface of each candidate box, and the velocity and energy of the pencil beam at each intersection point; among the candidate boxes inside a phantom, selecting a plurality of intersection points as sampling points, and connecting all the sampling points to obtain an actual motion trajectory of the pencil beam in the phantom; and according to the actual motion trajectory and a pencil beam algorithm, obtaining a proton dose delivered by the pencil beam to any voxel in the phantom, and then obtaining a proton dose delivered by proton irradiation to any voxel in the phantom.

The application discloses a kind of solar proton event causes the analysis and evaluation method of the risk of single event upset of spaceflight electronic device, comprising the following steps: S1. Establishing spaceflight electronic device target material model, calculating target device SEU cross section and proton energy relationship;S2. Analyzing the on-orbit proton radiation environment elements of spaceflight device, obtaining detection data and calculating the radiation flux of SPE;S3. The metric parameter of device single event upset caused by the occurrence process of SPE is calculated;S4. According to the calculation result, the SEU risk caused by SPE is evaluated and classified. The Monte Carlo method is used for SEU cross section calculation of electronic device, and the non-elastic energy deposition event of device sensitive area caused by single-energy proton can be accurately obtained. The present application can accurately and effectively provide basis for troubleshooting and information correction of spaceflight device, and can be directly applied to existing on-orbit spacecraft.

The invention belongs to the technical field of semiconductors, and provides a method for realizing a gallium nitride semi-insulating substrate by proton irradiation, which comprises the following steps of: preparing an unintentionally doped gallium nitride single crystal substrate; performing proton irradiation treatment on the gallium nitride single crystal substrate by using a proton irradiation device; and after the irradiation is completed, cutting the processed gallium nitride wafer into a plurality of thin sheets. After proton irradiation, Ga atoms and N atoms in GaN can absorb energy of H ions and move from original lattice positions to form N vacancies, Ga vacancies and anti-position defects of N, Ga vacancies and N, the defects can play a role of a carrier recombination center, the effect of reducing the carrier concentration is achieved by adsorbing carriers, and then the resistivity of the material is improved.

The invention discloses a method for realizing low-temperature diffusion bonding of a metal material through surface proton irradiation assistance, and relates to the technical field of welding. According to the method, an irradiation layer containing a large number of lattice defects and dislocations is prepared on the surface of a metal base material through a proton irradiation method, element diffusion channels are remarkably increased, diffusion connection of Zr-4 alloy under the low-temperature condition of 600-800 DEG C is achieved, and the strength of a welded joint reaches 290-420 MPa and can optimally exceed 90% of the strength of the base material. The method for realizing low-temperature diffusion bonding of the metal material through surface proton irradiation assistance can be obtained.

Materials and methods for enhancing the effectiveness of proton radiation therapy (e.g., high linear energy transfer (LET) proton radiation therapy) against tumor cells are provided herein.

Proton therapy system (1) for treating a patient (2) by means of proton radiation (3), comprising a particle accelerator (4) for generating a proton beam, a movable patient table (5) for holding and positioning a patient (2), a beam guidance device comprising several electromagnets (6) for focusing and / or defocusing and / or deflecting the proton beam (3), and a gantry (7) rotatable about a horizontal axis of rotation (R) for directing the proton beam (3) onto a target volume within a patient (2) held on the patient table (5), wherein the proton beam (3) has a maximum energy of less than 180 MeV, and the beam guidance device comprising a first scanner magnet (8A) and a second scanner magnet (8B) arranged in the direction of the proton beam behind the first scanner magnet (8A) for deflecting the proton beam (3), as well as a Proton beam direction between the scanner magnets (8A,8B) has a deflection magnet (9) arranged, wherein the deflection magnet (9) is configured to focus the proton beam (3) at the magnet input (9.1) in the plane of the beam deflection by the first scanner magnet (8A).

The invention relates to a tissue marker for proton radiation heart injury and application of the tissue marker. The tissue marker comprises one or more of a transcription marker and a protein marker. Wherein the transcription marker comprises one or more of PIK3R5, CCR7, IL7R, CD7, CD22, CR2, CCL5 and VAV1, and the transcription marker comprises one or more of PIK3R5, CCR7, IL7R, CD7, CD22, CR2, CCL5 and VAV1; and the protein marker comprises one or more of SIRT1 and HMGB1 (High Mobility Group Box 1). According to the invention, the differential marker is used as a potential biomarker of the radioactive heart loss, and a research method for researching the radioactive heart loss by using a mouse model is provided, so that a demonstrative research is provided for multi-omics analysis of the radioactive heart loss and explanation of an action mechanism of the radioactive heart loss.

A method for calculating proton radiation dose in a magnetic field comprises: determining the position of an emission source and the velocity and energy of a pencil beam at the emission source; after the proton beam is emitted from the emission source, determining multiple candidate boxes in a time sequence based on the position of the emission source, the velocity and energy of the pencil beam at the emission source, and information about the magnetic field, and sequentially calculating the position of the intersection of the pencil beam with the surface of each candidate box and the velocity and energy of the pencil beam at each intersection; selecting multiple intersection points in the candidate boxes inside a phantom as sampling points, connecting all the sampling points to obtain an actual motion trajectory of the pencil beam in the phantom; and obtaining the proton dose delivered by the pencil beam to any voxel in the phantom based on the actual motion trajectory and a pencil beam algorithm, thereby obtaining the proton dose irradiated to any voxel in the phantom.

Proton therapy systems will be deployed in existing radiotherapy rooms to limit radiation exposure and meet radiation safety requirements. A patient support platform disposed in the treatment room is configured to support a patient, such as in a sitting position. The imager is configured to image a patient on the patient support platform. A proton beam generator including a synchrotron is provided in an area of the treatment room. A proton beam delivery device is configured to deliver a proton radiation agent to an isocenter of a target tissue during a treatment session, wherein the delivery device may be a scaffold-less pencil beam scanning device that operates without a collimator. The synchrotron may be disposed adjacent an inlet wall of the treatment chamber, and the proton radiant is directed to a rear wall of the treatment chamber. The synchrotron may pass through an aperture of a rear median wall of the treatment chamber, and the proton radiative is directed to an inlet median wall of the treatment chamber.

This invention relates to a back-contact crystalline silicon solar cell for space applications and its fabrication method. The back-contact crystalline silicon solar cell comprises a p-type monocrystalline silicon substrate; the first crystalline silicon surface of the p-type monocrystalline silicon substrate is the light-facing side, and is sequentially disposed with a surface passivation layer, a first radiation-resistant layer with a silane-like structure, and a radiation-resistant hardening layer; the second crystalline silicon surface of the p-type monocrystalline silicon substrate is the back-facing side, and is sequentially disposed with a first intrinsic amorphous silicon passivation layer, a second radiation-resistant layer with a silane-like structure, a second intrinsic amorphous silicon passivation layer, a periodically spaced p-type hole collection layer and an n-type electron collection layer, a patterned transparent conductive oxide film, and a metal electrode. The back-contact crystalline silicon solar cell of this invention exhibits strong tolerance to extreme space environments, including resistance to ultraviolet radiation, high-energy electron and proton radiation, and high- and low-temperature cycling shock, and can provide low-cost, high-reliability solar cells for the energy systems of spacecraft, low-orbit communication satellites, and space stations.

The invention discloses a cockscomb proton radiation mutation breeding method and application, belongs to the field of plant mutation breeding, and aims to better meet the requirements of cockscomb mutation breeding. The method comprises the following steps: (a) placing cockscomb seeds to be treated in an independent space of an irradiation tray, and shielding an aluminum film on the surface of the independent space; then, the tray cover plate is placed on the aluminum film, and the cover plate dividing piece and the base plate dividing piece are arranged correspondingly; finally, the tray cover plate and the tray base plate are connected into a whole through screws, and assembling of the irradiation tray is completed. And (b) placing the irradiation tray filled with the cockscomb seeds to be treated in a vacuum target chamber, and irradiating with protons. According to the method, protons are adopted to carry out cockscomb proton radiation mutation breeding for the first time, the radiation mutation biological effect of the cockscomb is deeply explored, and the mutation breeding method not only can effectively expand the heritable variation spectrum of the cockscomb, but also is beneficial to breeding excellent varieties with novel characters.

The invention discloses a satellite in-orbit high-energy proton radiation environment data processing and modeling method, and relates to the field of satellite and spacecraft space radiation environment detection.The satellite in-orbit high-energy proton radiation environment data processing and modeling method comprises the steps that proton flux data observed and detected by a satellite in orbit is selected as original data, and data is screened out from the original data; a DBSCAN clustering algorithm is adopted for the screened data, a plurality of space accumulation areas are obtained, an area with the most data is selected from the space accumulation areas, and the area is a high-energy proton radiation core accumulation area; a sparsification method is adopted for the high-energy proton radiation core accumulation area, and a data point set after sparsification processing is obtained; the data point set and the space coordinate points of other areas are collected and stored, 2D and 3D models of high-energy proton radiation distribution are generated and drawn, and the 2D and 3D models are used for displaying high-energy proton space distribution. According to the method, the efficiency and precision of the model are remarkably improved, and the accuracy of reliability evaluation and performance prediction of the satellite in a complex radiation environment is improved.

The invention relates to a method for generating a star map of a high-dynamic star sensor after proton irradiation, which comprises the following steps of: converting an electron number into a gray value to obtain a proton radiation induced noise matrix, and combining simulation to obtain a gray value matrix of intrinsic dark current noise, photon shot noise and background noise; and adding with the proton radiation induced noise matrix to obtain a total noise gray value matrix, namely a background noise graph. A mathematical model of star point energy degradation under a high dynamic condition is utilized to obtain the gray level of each pixel when a star point centroid moves, a star point centroid track of the star sensor at a certain motion angular velocity is deduced, and the gray level value of the pixel in a star point energy influence range when the star sensor rotates is solved; and adding transient bright spots and star point image spot trailing extracted from the proton irradiation test acquisition image into the background noise map to obtain a high-dynamic star sensor star map after proton irradiation, and changing proton irradiation energy, fluence and star sensor rotation angular velocity to obtain a high-dynamic star sensor star map after proton irradiation. And obtaining a star map data set under different proton irradiation conditions and star sensor dynamic working conditions.

Materials and methods for enhancing the effectiveness of proton radiation therapy (e.g., high linear energy transfer (LET) proton radiation therapy) against tumor cells are provided herein.

The invention discloses a method for evaluating high-energy proton irradiation damage of a back gate CNT (carbon nano-tube) device, and the method comprises the steps: introducing a charge deposition layer, namely a CNT / charge deposition layer / SiO2 / P-Si structure, which is used for generating a capturing effect of an interface trap through reaction proton irradiation into a device structure; accurate estimation and evaluation of high-energy proton radiation damage and output characteristic influence of the back gate CNT device are realized. The specific process of damage evaluation is as follows: 1, constructing a back gate CNT device simulation model containing a charge deposition layer; 2, electrical parameters of a charge deposition layer and other components in the model are adjusted, and output characteristics of the device are accurately simulated; 3, simulating the influence of proton irradiation on electrical parameters of the charge deposition layer and other components; and 4, substituting the electrical characteristics of the irradiated charge deposition layer and other components into the device simulation model in the process 1, simulating the output characteristics of the device, and evaluating the damage of the high-energy proton irradiation to the back gate CNT device and the influence of the high-energy proton irradiation on the output performance of the back gate CNT device. According to the damage assessment method, the charge deposition layer is introduced to reflect the capture effect of an interface trap generated by proton irradiation, a simulation result is matched with an experimental result, accurate prediction of irradiation damage of the back gate CNT device is achieved, and understanding of a micro-level damage mechanism is deepened.

The invention belongs to the technical field of semiconductors, and provides a method for isolating a gallium nitride device by a proton irradiation technology, which comprises the following steps of: performing selective proton irradiation by using a lead mask plate, and performing proton irradiation treatment on the device by using a proton irradiation device; after irradiation is completed, metal films T , A < l >, N and Au are evaporated on one side of the GaN substrate, annealing is conducted in the nitrogen atmosphere, and a cathode is prepared; and evaporating metal films N and Au at one end of the n-GaN layer, and removing redundant metal films to form an anode. According to the method, a local deep energy level defect is introduced into the GaN material through a high-energy proton beam by using proton irradiation, so that the material forms high resistance in a specific region, and then electrical isolation is realized.

The invention relates to a method for acquiring images formed using proton radiation. The essence of the invention consists in performing a preliminary check to establish a match between the parameters of the proton beam generated by a first magneto-optical system and the parameters of a second magneto-optical system, which requires: removing a converter from the first recording system and installing a detector of proton radiation in the Fourier plane of the second magneto-optical system instead of a collimator, where the converter and the collimator are returned to their previous positions before the start of the check; changing the angle of inclination of the phase ellipse of the proton beam generated by the first magneto-optical system in the vertical and horizontal planes while passing the beam through the examination zone and through the second magneto-optical system; recording signals from the detector installed in the Fourier plane; and determining the size of the beam in both planes, where the parameters of the proton beam are parameters matched to the parameters of the second magneto-optical system when the size of the beam is minimal, and the examination is performed using the beam with matched parameters. The quality of the recorded proton images is thus improved.

The invention provides a neutron, electron and proton radiation resistant phase change energy storage integrated structure and a preparation method thereof. The invention provides an anti-particle-radiation phase change energy storage integrated structure and a preparation method thereof for the anti-radiation requirement and the thermal control requirement of a sensitive single machine in a spacecraft, and the phase change energy storage integrated structure comprises a dot matrix enhanced cavity structure and a multifunctional phase change working medium. The dot matrix enhanced cavity structure is a dot matrix enhanced sealing communication structure and has the functions of heat conduction and bearing. The multifunctional phase-change working medium is formed by doping a phase-change base material with radiation protection nanoparticles, and a cavity of the dot matrix enhanced cavity structure is filled with the multifunctional phase-change working medium, so that the functions of particle protection and phase-change energy storage are achieved. The device is simple and reasonable in structure, light in additional weight and high in implementability, can be flexibly applied to radiation protection and thermal control of sensitive single-machine neutrons, electrons and protons in a spacecraft, improves the in-orbit operation reliability of the spacecraft and prolongs the service life of the spacecraft.