A kind of preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer

Abstract

The invention discloses a preparation method of a light emitting diode epitaxial wafer and a light emitting diode epitaxial wafer thereof, belonging to the field of semiconductor technology. A manufacture method comprises sequentially growing a buffer layer, an N-type semiconductor layer, an active layer and an electron bloc layer on a substrate by a chemical vapor deposition technique; Carrying out proton radiation on the surface of the electron barrier layer to reduce the resistivity of the electron barrier layer; growing a P-type semiconductor layer on the electron barrier layer using a chemical vapor deposition technique. By performing proton radiation on the surface of the electron barrier layer, changing the microstructure of the electron blocking layer crystal, affecting the morphology and number of defects in the electron barrier layer, reducing the resistivity of the electron blocking layer, the method can improve the carrier mobility of the electron blocking layer, facilitatethe hole migration of the P-type semiconductor layer into the active layer, increase the number of holes in the active layer, further increase the radiation recombination luminescence of the holes inthe active layer, and ultimately improve the luminescence efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has attracted wide attention due to its advantages of energy saving, environmental protection, high reliability, and long service life. For civil lighting, luminous efficiency and service life are the main criteria, so increasing the luminous efficiency of LEDs and improving the antistatic ability of LEDs is particularly critical for the wide application of LEDs. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, a...

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Problems solved by technology

[0006] The embodiment of the present invention provides a method for preparing a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer, which can solve the problem of low luminous efficiency of the LED caused by the decrease in the number of holes in the active layer in the prior art

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