10 results about "Radiation tolerance" patented technology

A Hybrid Switched Capacitor Converter (HSCC) topology is presented that is suitable for high conversion ratio Point-of-Load (PoL) applications. The topology specifically targets 48V to 1V power delivery in space-based high-performance computing systems, where size and weight are important considerations, along with device de-rating for radiation tolerance. One implementation merges an initial 2:1 switched capacitor conversion stage with a symmetric dual inductor hybrid (SDIH) conversion stage, reaping benefits of both. The SDIH stage offers reduced component count and an excellent switch stress figure of merit, while the initial 2:1 voltage reduction stage significantly reduces the volume of flying capacitors, enabling compact size and low weight.

A radiation tolerant data storage apparatus and method. The radiation tolerant data storage apparatus and method can direct and store redundant copies of data in different physical locations to reduce the likelihood that a single radiation particle damages corresponding portions of the multiple copies of data. The radiation tolerant data storage apparatus and method includes a controller that arranges for multiple copies of data to be stored in a manner that reduces collinearity and detect if one copy has been damaged. The copies are preferably stored at physical locations that minimize or otherwise completely avoid the ability for a single radiation particle to damage or flip the same bit in each of the multiple copies of data. Most preferably, numerous other radiation hardening techniques can also be used to provide further radiation tolerance to the system and method.

The utility model relates to the technical field of film heaters, in particular to an irradiation-resistant heater, which comprises an electric heating layer, a pair of leads and a pair of insulating layers. The electric heating layer is fixedly arranged between the pair of insulating layers; the head ends of the pair of wires are electrically connected with the positive electrode of the electric heating layer and the negative electrode of the electric heating layer respectively. According to the utility model, the thermoplastic connecting layer made of the thermoplastic polyimide material is adopted to replace a bonding layer of a film heater in the prior art, so that the total radiation-resistant dose of the device is improved to 1.0 * 1010rad (SI), and the device can meet the requirements of the use environment outside a spacecraft cabin; the defect that a film heater in the prior art is poor in environment adaptability is overcome.

An electronic device and method for adaptively storing data in bundle form. An aspect of the present disclosure provides an electronic device comprising: a processor; a memory storing instructions; a first storage storing data; and a second storage having a radiation tolerance higher than that of the first storage, wherein, when executed by the processor, the instructions cause the electronic device to transfer data stored in the first storage to the second storage when a deterioration of a space weather environment of a region of space in which the electronic device is located occurs, and to transfer data stored in the second storage to the first storage when the deterioration of the space weather environment is resolved, and wherein the data stored in the first storage or the data stored in the second storage is data that is transmitted to another electronic device via space communications in bundle form.

The utility model discloses a high-power low-density silicon carbide MOSFET device, which relates to the technical field of semiconductor power devices and comprises a drain electrode, a silicon carbide substrate arranged above the drain electrode, a silicon carbide epitaxial layer arranged above the silicon carbide substrate and a conductive base region arranged on the silicon carbide epitaxial layer. A conductive contact layer and a P well region are arranged on the two sides of the upper end of the conductive base region respectively, a conductive shielding layer and an N-drift region are arranged above the P well region and the conductive contact layer respectively, conductor regions are arranged above the N-drift region and the conductive shielding layer respectively, and conductive metal layers are arranged above the two conductor regions respectively. According to the high-power and low-density silicon carbide MOSFET device, better radiation tolerance and electrical performance can be provided for the silicon carbide MOSFET device, the anti-radiation intensity of the silicon carbide MOSFET device is improved, the conduction efficiency, the safety and the reliability of the silicon carbide MOSFET device are improved, and the high-power and low-density characteristics are achieved.

The invention provides a method for analyzing the influence of a barrier layer defect of a high-mobility device on electrical characteristics, and relates to the technical field of electronic components, and the method comprises the steps: carrying out the numerical simulation of a physical process of a particle with preset energy entering an AlGaN / GaN HEMTs device, and obtaining a displacement energy loss spectrum; determining irradiation experiment parameters, and testing the AlGaN / GaN HEMTs device based on the irradiation experiment parameters to obtain a test sample and corresponding electrical performance data before and after irradiation; performing I-DLTS test and EDS scanning on the test sample to obtain a test result; the displacement energy loss spectrum, the corresponding electrical performance data before and after irradiation and the test result are analyzed, the influence of the AlGaN barrier layer defects on the electrical characteristics of the AlGaN / GaN HEMTs device is obtained, and a theoretical basis is provided for improving the radiation tolerance and reliability of the device through deep analysis of a radiation damage mechanism.

The preparation method comprises the following steps: taking silicon as a substrate layer, growing Si3N4 passivation layers on the upper surface and the lower surface of the silicon substrate by adopting a chemical vapor deposition technology, spin-coating a negative photoresist layer on the Si3N4 passivation layer on one surface by utilizing a spin coater, exposing and developing the negative photoresist layer, and repeating the steps on the other surface, thereby obtaining the radiation-resistant ultrafast response silicon detector. Hole patterns formed after photoetching of the front face and the back face are mutually nested, photoresist is washed away through photoresist removing liquid after the exposed part of the Si3N4 passivation layer is removed, then the silicon substrate is soaked in etching liquid to be subjected to constant-temperature and ultrasonic treatment, the silicon substrate is etched to form a three-dimensional hole structure, the residual Si3N4 passivation layer on the surface is removed, and the three-dimensional hole structure is obtained. And finally depositing metal electrodes on the front and back surfaces of the sample respectively. According to the three-dimensional rhombic hole structure provided by the invention, the radiation resistance and ultrafast response capability of the silicon detector can be effectively improved, the selective wet etching quality is high, and the etching cost is low.

The present invention discloses a rare earth ion-doped borosilicate scintillator glass and its preparation method and application. The rare earth ion-doped borosilicate scintillator glass, by mass percentage, comprises: 23-27% of silicon dioxide; 7-10% of boron trioxide; 1-3% of aluminum fluoride; 1-3% of aluminum oxide; 11-15% of strontium oxide; 9-13% of calcium oxide; 35-38% of gadolinium oxide; 1-3% of cerium dioxide. The rare earth ion-doped borosilicate scintillator glass prepared by the present invention has an average transmittance of 84%-87% at 300-600 nm, a light yield of 1206-1296 ph / MeV, a density of 5.81-5.96 g / cm<supgt;3< / supgt;, a decay time of 100-128 ns, and a radiation tolerance time of 173-198 h.

A system for improving radiation tolerance of memory senses an amount of radiation exposure and, based on the sensed amount of radiation exposure, determines whether to perform one or more techniques for mitigating the effects of the radiation exposure. As an example, the system may perform a data refresh operation by re-writing data that has been corrupted by radiation, or the system may adjust the reference voltage used to read memory cells. In another example, the system may perform a fault repair operation by re-programming cells that have erroneously transitioned from a program state to an erase state. The system may selectively perform different radiation-mitigation techniques in a tiered approach based on the sensed amount of radiation in order to limit the adverse effects of the more invasive techniques.

The invention discloses an erbium-ytterbium co-doped silica optical fiber anti-radiation treatment method based on high-temperature induced phase separation and an optical fiber product. According to the method, three-step high-temperature gradient annealing treatment is carried out on the erbium-ytterbium co-doped silica fiber containing P2O5 under specific conditions, a nanoscale P2O5 phase separation phenomenon is induced in a fiber core in an argon environment, and the stability and radiation resistance of the erbium-ytterbium co-doped silica fiber in a radiation environment are remarkably enhanced. Specifically, the annealing process effectively improves the microstructure characteristics of the fiber core glass, reduces the damage of radiation to the internal structure of the fiber core, and remarkably improves the radiation tolerance of the optical fiber. The erbium-ytterbium co-doped silica fiber prepared by the method is suitable for the fields with high radiation requirements such as space laser communication, laser radar, satellite remote sensing and the like, the service life of the erbium-ytterbium co-doped silica fiber in a space radiation environment can be remarkably prolonged, the fiber performance requirements in an extreme environment are met, and an efficient and controllable technical solution is provided for related applications.