5 results about "Radiation tolerance" patented technology

The utility model relates to the technical field of film heaters, in particular to an irradiation-resistant heater, which comprises an electric heating layer, a pair of leads and a pair of insulating layers. The electric heating layer is fixedly arranged between the pair of insulating layers; the head ends of the pair of wires are electrically connected with the positive electrode of the electric heating layer and the negative electrode of the electric heating layer respectively. According to the utility model, the thermoplastic connecting layer made of the thermoplastic polyimide material is adopted to replace a bonding layer of a film heater in the prior art, so that the total radiation-resistant dose of the device is improved to 1.0 * 1010rad (SI), and the device can meet the requirements of the use environment outside a spacecraft cabin; the defect that a film heater in the prior art is poor in environment adaptability is overcome.

An electronic device and method for adaptively storing data in bundle form. An aspect of the present disclosure provides an electronic device comprising: a processor; a memory storing instructions; a first storage storing data; and a second storage having a radiation tolerance higher than that of the first storage, wherein, when executed by the processor, the instructions cause the electronic device to transfer data stored in the first storage to the second storage when a deterioration of a space weather environment of a region of space in which the electronic device is located occurs, and to transfer data stored in the second storage to the first storage when the deterioration of the space weather environment is resolved, and wherein the data stored in the first storage or the data stored in the second storage is data that is transmitted to another electronic device via space communications in bundle form.

The invention provides a method for analyzing the influence of a barrier layer defect of a high-mobility device on electrical characteristics, and relates to the technical field of electronic components, and the method comprises the steps: carrying out the numerical simulation of a physical process of a particle with preset energy entering an AlGaN / GaN HEMTs device, and obtaining a displacement energy loss spectrum; determining irradiation experiment parameters, and testing the AlGaN / GaN HEMTs device based on the irradiation experiment parameters to obtain a test sample and corresponding electrical performance data before and after irradiation; performing I-DLTS test and EDS scanning on the test sample to obtain a test result; the displacement energy loss spectrum, the corresponding electrical performance data before and after irradiation and the test result are analyzed, the influence of the AlGaN barrier layer defects on the electrical characteristics of the AlGaN / GaN HEMTs device is obtained, and a theoretical basis is provided for improving the radiation tolerance and reliability of the device through deep analysis of a radiation damage mechanism.

The preparation method comprises the following steps: taking silicon as a substrate layer, growing Si3N4 passivation layers on the upper surface and the lower surface of the silicon substrate by adopting a chemical vapor deposition technology, spin-coating a negative photoresist layer on the Si3N4 passivation layer on one surface by utilizing a spin coater, exposing and developing the negative photoresist layer, and repeating the steps on the other surface, thereby obtaining the radiation-resistant ultrafast response silicon detector. Hole patterns formed after photoetching of the front face and the back face are mutually nested, photoresist is washed away through photoresist removing liquid after the exposed part of the Si3N4 passivation layer is removed, then the silicon substrate is soaked in etching liquid to be subjected to constant-temperature and ultrasonic treatment, the silicon substrate is etched to form a three-dimensional hole structure, the residual Si3N4 passivation layer on the surface is removed, and the three-dimensional hole structure is obtained. And finally depositing metal electrodes on the front and back surfaces of the sample respectively. According to the three-dimensional rhombic hole structure provided by the invention, the radiation resistance and ultrafast response capability of the silicon detector can be effectively improved, the selective wet etching quality is high, and the etching cost is low.

A system for improving radiation tolerance of memory senses an amount of radiation exposure and, based on the sensed amount of radiation exposure, determines whether to perform one or more techniques for mitigating the effects of the radiation exposure. As an example, the system may perform a data refresh operation by re-writing data that has been corrupted by radiation, or the system may adjust the reference voltage used to read memory cells. In another example, the system may perform a fault repair operation by re-programming cells that have erroneously transitioned from a program state to an erase state. The system may selectively perform different radiation-mitigation techniques in a tiered approach based on the sensed amount of radiation in order to limit the adverse effects of the more invasive techniques.