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Method for improving and modulating magnetoresistance of semi-metallic thin film materials by high-energy heavy ion irradiation

A thin-film material, magnetoresistance technology, which is applied in the manufacture/processing of electromagnetic devices, etc., can solve the problems of reducing the Curie temperature of materials and unfavorable practical applications.

Inactive Publication Date: 2010-06-16
INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
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Problems solved by technology

At present, ion substitution and composite structure are the most commonly used optimization modification methods (see literature 12: P.Chen, D.Y.Xing, Y.W.Du, et al., Phys.Rev.Lett., 87, 107202(2001)) , but doping, ion substitution and material recombination all significantly reduce the Curie temperature of the material, which is not conducive to practical application

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  • Method for improving and modulating magnetoresistance of semi-metallic thin film materials by high-energy heavy ion irradiation
  • Method for improving and modulating magnetoresistance of semi-metallic thin film materials by high-energy heavy ion irradiation
  • Method for improving and modulating magnetoresistance of semi-metallic thin film materials by high-energy heavy ion irradiation

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Embodiment

[0034] In this example, semi-metallic Fe 3 o 4 Nano polycrystalline film is taken as an example to illustrate the change of magnetoresistance at room temperature by using high-energy heavy ion irradiation to improve and modulate the magnetoresistance of semi-metallic film materials.

[0035] i. Semi-metallic Fe 3 o 4 The preparation of nano-polycrystalline thin film is to prepare positive fraction Fe on the glass substrate by means of spin spraying and electroless plating. 3 o 4 nano-polycrystalline film.

[0036] The specific method is: the FeCl 2 (0.01mol / L) was dissolved in deionized water to make a reaction solution, and 0.005mol / L of NaNO 2 and 0.1mol / L of CH 3 COONH 4 (pH buffer) dissolved in deionized water to make oxidation solution, adjust the pH values ​​of the two reaction solutions to 5.5 and 6.9 respectively, inject the reaction solution and oxidation solution with nitrogen gas, and put them in a closed container through two special nozzles While reacting...

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Abstract

The invention relates to a method for improving and modulating magnetoresistance of semi-metallic thin film materials by high-energy heavy ion irradiation, which adopts the following measures: (1) the film thickness of a semi-metallic thin film is controlled between 100 nanometers and 10 micrometers; (2) the type of irradiation heavy ions is Aq+, wherein A is selected from one of elements with the atomic numbers of 10-92, q+ is the number of charges stripped by an accelerator, and q is greater than or equal to 1 and is less than or equal to the atomic number of A; (3) the energy range of the irradiation heavy ions is between 100keV and 10GeV; and (4) the irradiation range of the irradiation heavy ions is between 1010ions / cm<2> and 1017ions / cm<2>. The method of the invention can obviously increase the grain insulating boundary and reduce the surface stress of semi-metallic thin film materials represented by Fe3O4 nano-polycrystalline thin films, can obtain high-quality barrier layers and barrier interfaces, can obviously improve the magnetoresistance at room temperature, and can enable the magnetoresistance to be capable of being modulated manually.

Description

technical field [0001] The invention relates to a method for improving and modulating the magnetoresistance of semi-metallic thin film materials, that is, using high-energy heavy ion irradiation to improve and modulate the magnetoresistance of Fe 3 o 4 Nano polycrystalline thin film is the representative method of magnetoresistance of semi-metallic thin film material. Background technique [0002] Magnetoresistance (MR) is defined as MR=Δρ / ρ=[ρ(0)-ρ(H)] / ρ(0), which represents the change in material resistance with and without an applied magnetic field H Rate. Generally speaking, the magnetoresistance effect can be divided into two categories: the intrinsic magnetoresistance effect and the extrinsic magnetoresistance effect. What is related to the present invention is the extrinsic magnetoresistance effect affected by the microscopic scale, showing negative magnetoresistance characteristics. [0003] As a carrier of charge, electrons can conduct current, and this property...

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Application Information

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IPC IPC(8): H01L43/12
Inventor 孙建荣王志光金运范姚存峰王瑜玉魏孔芳申铁龙缑洁臧航
Owner INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
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