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A method for improving and modulating the magnetoresistance of semi-metallic thin film materials by irradiation of high-energy heavy ions

A thin-film material and magnetoresistance technology, applied in the manufacture/processing of electromagnetic devices, can solve problems such as unfavorable practical applications and lowering the Curie temperature of materials

Inactive Publication Date: 2011-12-07
INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
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Problems solved by technology

At present, ion substitution and composite structure are the most commonly used optimization modification methods (see literature 12: P.Chen, D.Y.Xing, Y.W.Du, et al., Phys.Rev.Lett., 87, 107202(2001)) , but doping, ion substitution and material recombination all significantly reduce the Curie temperature of the material, which is not conducive to practical application

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  • A method for improving and modulating the magnetoresistance of semi-metallic thin film materials by irradiation of high-energy heavy ions
  • A method for improving and modulating the magnetoresistance of semi-metallic thin film materials by irradiation of high-energy heavy ions
  • A method for improving and modulating the magnetoresistance of semi-metallic thin film materials by irradiation of high-energy heavy ions

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Embodiment

[0034] In this example, semi-metallic Fe 3 o 4 Nano polycrystalline film is taken as an example to illustrate the change of magnetoresistance at room temperature by using high-energy heavy ion irradiation to improve and modulate the magnetoresistance of semi-metallic film materials.

[0035] i. Semi-metallic Fe 3 o 4 The preparation of nano-polycrystalline thin film is to prepare positive fraction Fe on the glass substrate by means of spin spraying and electroless plating. 3 o 4 nano-polycrystalline film.

[0036] The specific method is: the FeCl 2 (0.01mol / L) was dissolved in deionized water to make a reaction solution, and 0.005mol / L of NaNO 2 and 0.1mol / L of CH 3 COONH 4 (pH buffer) dissolved in deionized water to make oxidation solution, adjust the pH values ​​of the two reaction solutions to 5.5 and 6.9 respectively, inject the reaction solution and oxidation solution with nitrogen gas, and put them in a closed container through two special nozzles While reacting...

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Abstract

The invention relates to a method for improving and modulating the magnetoresistance of a semi-metallic thin film material by irradiation with high-energy heavy ions. The measures are: (1) the film thickness of the semi-metallic thin film is controlled between 100 nanometers and 10 microns; 2) The type of irradiated heavy ion is Aq+, A is one of the elements with atomic number 10 to 92, q+ is the number of charge states stripped by the accelerator, which is: 1≤q≤A atomic number; ( 3) The energy range for irradiating heavy ions is between 100keV and 10GeV; (4) The range for irradiating heavy ions is 1010ions / cm2 to 1017ions / cm2. Through the method of the present invention, the grain insulation boundary of the semi-metallic film material represented by Fe3O4 nano-polycrystalline film can be significantly increased, the surface stress can be reduced, and a high-quality barrier layer and barrier interface can be obtained, so that its room temperature magnetic The resulting resistance is significantly increased and can be artificially modulated.

Description

technical field [0001] The invention relates to a method for improving and modulating the magnetoresistance of semi-metallic thin film materials, that is, using high-energy heavy ion irradiation to improve and modulate the magnetoresistance of Fe 3 o 4 Nano polycrystalline thin film is the representative method of magnetoresistance of semi-metallic thin film material. Background technique [0002] Magnetoresistance (MR) is defined as MR=Δρ / ρ=[ρ(0)-ρ(H)] / ρ(0), which represents the change in material resistance with and without an applied magnetic field H Rate. Generally speaking, the magnetoresistance effect can be divided into two categories: the intrinsic magnetoresistance effect and the extrinsic magnetoresistance effect. What is related to the present invention is the extrinsic magnetoresistance effect affected by the microscopic scale, showing negative magnetoresistance characteristics. [0003] As a carrier of charge, electrons can conduct current, and this property...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12
Inventor 孙建荣王志光金运范姚存峰王瑜玉魏孔芳申铁龙缑洁臧航
Owner INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
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