Test method for detecting single particle disturbance of memories by taking protons as radiation source

Abstract

The invention discloses a test method for detecting single particle disturbance of memories by taking protons as a radiation source. The method comprises the following steps of selecting memory samples; performing power-on total parameter testing on the selected memory samples to verify functions of the memory samples; selecting proton beams with certain energy and fluence rates on a medium and high-energy proton accelerator; connecting the memories and a circuit board well, and performing power-on testing again; filling all the memories with data; backwards reading the data from the memories,and turning on the proton beams meeting the requirements when a test system is stable, thereby performing irradiation on the single memory; and moving the subsequent memories to the beam output positions of the beams in sequence, and replacing the energy of the proton beams, until all energy points are tested. The single particle disturbance effect is detected by taking the protons as the radiation source; compared with other radiation sources, the protons are more reliable, simpler and more convenient; and the data extraction accuracy is ensured while the efficiency is improved.

Description

Technical field [0001] The present invention relates to the technical field of single-event disturbance testing, and more specifically, to a test method for detecting single-event disturbances in a memory using protons as a radiation source. Background technique [0002] In the aerospace field, more and more memories are applied to satellites, spacecraft, and airplanes. Due to its special working environment, the memory has to face the radiation of various particles and rays, resulting in various failure phenomena. With the development of science and technology, the memory is developing in the direction of higher and higher integration. Research in recent years has shown that the impact of a single particle on the memory becomes more and more obvious with the improvement of integration, and this trend is becoming more and more. The more serious. [0003] Single event disturbance is a kind of single event effect. It is caused by a single charged particle entering the memory. In th...

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Problems solved by technology

However, due to the absence of high-energy proton accelerators in China...

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