Transversal epitaxial growth method for nano area of semiconductor film

A lateral epitaxial growth, semiconductor technology, applied in semiconductor/solid-state device manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of reducing the growth steps of lateral epitaxy technology, uneven crystal quality, etc., to achieve uniform thin film crystal quality, improve crystal quality Quality, method simple effect

Inactive Publication Date: 2009-08-19
SUZHOU NANOJOIN PHOTONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to overcome the limitations of the above-mentioned prior art, solve the problem of uneven crystal quality when the traditional lateral epitaxy technology grows thin films, reduce the growth steps of the lateral epitaxy technology, so as to further improve the photoelectric characteristics of single crystal thin films

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  • Transversal epitaxial growth method for nano area of semiconductor film
  • Transversal epitaxial growth method for nano area of semiconductor film
  • Transversal epitaxial growth method for nano area of semiconductor film

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Embodiment 1

[0035] Embodiment one, see appendix Figures 1 to 8 , the nano-region lateral epitaxy technique adopted in the present invention comprises the following steps:

[0036] Such as figure 1 , using electron beam evaporation to vapor-deposit a thin layer of gold on the Si(111) substrate, the thickness of the thin layer is 30nm;

[0037] Such as figure 2 , moved into MOCVD, the pressure was reduced to 0.5atm, nitrogen gas was introduced, the temperature was raised to 800°C and kept constant for 6 minutes, the gold thin layer was transformed into gold Au particles, the diameter of gold particles was 200-300nm, and the distribution density of metal particles was 10 9 / cm 2 , the duty cycle is 50%;

[0038] Such as image 3 , the pressure is reduced to 0.2atm, and hydrogen, trimethylgallium and ammonia are introduced for 2 minutes, and gallium nitride crystal nuclei are formed at the bottom of the gold particles, with a diameter of 200-300nm;

[0039] Such as Figure 4 , the te...

Embodiment 2

[0043] Embodiment two, see appendix Figures 1 to 8 , the nano-region lateral epitaxy technique adopted in the present invention comprises the following steps:

[0044] Such as figure 1 , using electron beam evaporation to vapor-deposit a thin layer of platinum on the Si(111) substrate, the thickness of the thin layer is 30nm;

[0045] Such as figure 2 , moved into MOCVD, the pressure was reduced to 0.5atm, nitrogen gas was introduced, the temperature was raised to 800°C and kept constant for 6 minutes, the platinum thin layer was transformed into platinum Pt particles, the diameter of platinum particles was 200-300nm, and the distribution density of metal particles was 10 9 / cm 2 , the duty cycle is 50%;

[0046] Such as image 3 , the pressure dropped to 0.3atm, and hydrogen, trimethylindium and ammonia were introduced for 2 minutes, and indium nitride crystal nuclei were formed at the bottom of the platinum particles, with a diameter of 200-300nm;

[0047] Such as ...

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Abstract

The invention discloses a cross epitaxial growth method of a semiconductor film, which comprises the following steps: (1) a nucleated metallic catalyst film is evaporated on a substrate material and island-shaped metallic catalyst particles which are evenly distributed on the substrate are obtained after the film is annealed; (2) in external equipment, a crystal nucleus is formed on the bottom of island-shaped metallic particles; and then nano-column arrays grow longitudinally; (3) a wet etching method is used for eliminating the metallic catalyst on a nano-column to obtain semiconductor nano-column array structures with the same orientation and height; (4) the etched nano-column is put into the external equipment and a lateral epitaxy technology is used for integrating the nano-column arrays into a flat surface; and then a semiconductor epitaxial film with the required thickness grows on the flat surface. As cross epitaxy occurs in nano area, defects and diffusion of residual stress can be effectively restrained and the quality of film crystals is more uniform than that of film crystals prepared by the traditional method, thus improving the crystal quality of two-dimensional semiconductor films; furthermore, the invention has simple method and wide applicability.

Description

technical field [0001] The invention relates to a lateral epitaxial growth method of a semiconductor thin film, in particular to a method for vapor phase epitaxial growth of a high-quality gallium nitride single crystal thin film. Background technique [0002] Wide bandgap materials represented by GaN (gallium nitride) are the third-generation semiconductor materials after Si and GaAs, and are used to make electronic devices such as light-emitting diodes, lasers, detectors, high-frequency high-power transistors, etc. [0003] Since commercial high-quality bulk GaN crystals are not yet available, heterogeneous substrates are generally used for epitaxy. Unfortunately, there is a large lattice mismatch between GaN and sapphire substrates (or Si substrates). This leads to dislocations in the epitaxial layer, which will spread and pass through the entire epitaxial layer, limiting the improvement of GaN devices. In order to improve the quality of semiconductor thin films, a varie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205B82B3/00C23C16/44
Inventor 王怀兵黄小辉杨辉张书明
Owner SUZHOU NANOJOIN PHOTONICS
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