59results about How to "Limited resistance" patented technology

An exercise system includes a user input arrangement; a rotatable member that rotates in response to an input force applied by a user on the user input arrangement; a power sensing arrangement that senses power applied to the rotatable member due to the input force applied by the user; and a variable resistance arrangement interconnected with the power sensing arrangement and with the user input arrangement. The resistance arrangement applies resistance to rotation of the rotatable member, and is variable in response to the power sensing arrangement to vary the resistance applied to the rotatable member. The variable resistance arrangement may be a brake that interacts with the rotatable member to resist rotation of the rotatable member, and to thereby resist the input force applied by the user. The variable resistance arrangement includes a controller for controlling the brake in response to the power sensing arrangement.

The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection function against static electricity in which relatively low voltage generates for a long period of time. Electrostatic protection element sections 28 and 30 are provided with a first TFT 32 having a source electrode (S) and a drain electrode (D) where the source electrode (S) is connected to external output electrodes 16 and 18 and the drain electrode (D) is connected to common wirings 22 and 24, a second TFT 38 having a conductor 42, a source electrode (S), a drain electrode (D) and a gate electrode (G) where the conductor 42 is connected to the gate electrode (G) of the first TFT 32, the source electrode (S) is connected to the external output electrodes 16 and 18, the drain electrode (D) is connected to the conductor 42 and the gate electrode (G) is electrically floated, and a third TFT 40 having a source electrode (S), a drain electrode (D) and a gate electrode (G) where the source electrode (S) is connected to the common wirings 22 and 24, the drain electrode (D) is connected to the conductor 42 and the gate electrode is electrically floated.

The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection function against static electricity in which relatively low voltage generates for a long period of time. Electrostatic protection element sections 28 and 30 are provided with a first TFT 32 having a source electrode (S) and a drain electrode (D) where the source electrode (S) is connected to external output electrodes 16 and 18 and the drain electrode (D) is connected to common wirings 22 and 24, a second TFT 38 having a conductor 42, a source electrode (S), a drain electrode (D) and a gate electrode (G) where the conductor 42 is connected to the gate electrode (G) of the first TFT 32, the source electrode (S) is connected to the external output electrodes 16 and 18, the drain electrode (D) is connected to the conductor 42 and the gate electrode (G) is electrically floated, and a third TFT 40 having a source electrode (S), a drain electrode (D) and a gate electrode (G) where the source electrode (S) is connected to the common wirings 22 and 24, the drain electrode (D) is connected to the conductor 42 and the gate electrode is electrically floated.

The data storage media comprises, in a preferred embodiment, a homogenous or non-homogenous plastic substrate that can be formed in situ with the desired surface features disposed thereon on one or both sides, a data storage layer such as a magneto-optic material also on one or both sides, and an optional protective, dielectric, and / or reflective layers. The substrate can have a substantially homogenous, tapered, concave, or convex geometry, with various types and geometries of reinforcement employed to increase stiffness without adversely effecting surface integrity and smoothness.

A child safety seat including a seat bottom and seat back first and second resilient side elements carried on laterally-opposed sides of the seat back, and including walls defining an enclosed chamber. The walls have sufficient rigidity to maintain a nominal shape and are deformable in response to a predetermined minimum impact.

A strip dispenser has a strip magazine, a magazine spring, a strip vial component, and a cover. The strip magazine has a magazine open end and an outer magazine casing surrounding the strip magazine adjacent the open end for a predefined distance along the strip magazine where the magazine has a magazine volume with an open magazine top. The magazine spring is contained within the strip magazine. The strip vial component has a magazine receiving end, a closed end and a vial recess for slidably receiving the strip magazine between a first position and a second position where the vial recess has a shoulder portion spaced from the closed end and adjacent to and aligned with the open magazine top. The cover encloses the magazine open end and has a slit spaced a predefined distance from an edge of the cover where the slit is in communication with the magazine volume and the open magazine top and in spatial alignment with the shoulder portion.

A plant support device that is tip over resistant for vertical support of tomato and other climbing plants that allows for space conservation, maximum sunlight absorption and easy access to cleaner fruit. The easily assembled and disassembled unit comprises vertical uprights, a plurality of hoops and clamping mechanisms assembled to meet the needs of plant growth. The unit may also have a knob and hole arrangement for aiding in securing the hoops to the uprights. The unit may be made of a variety of materials and the individual pieces can be of unitary construction or of a construction that allows for maximum flexibility of size and shape. The hoops and uprights may be made of smaller, interconnected pieces, which provide for increasing or decreasing the dimensions and spacings to better meet the needs of the plant to be supported.

A wind turbine for generating electricity is configured as a drum with a housing that has adjustable shutters to control the amount of wind reaching the turbine blades. Alternatively, the turbine blades can be pivotably mounted and opened and closed using a cam follower, cam track system to minimize wind exposure to downstream turbine blades.

A Schottky junction is formed at the connection between an SOI layer and a contact (namely, under an element isolation insulating film) without forming a P+ region with a high impurity concentration thereat. The surface of a body contact is provide with a barrier metal. A silicide is formed between the body contact and the SOI layer as a result of the reaction of the barrier metal and the SOI layer.

A spin transistor useful for device miniaturization and high-density integration is provided. The spin transistor includes: a semiconductor substrate including a channel layer; ferromagnetic source and drain disposed on the semiconductor substrate to be separated from each other and to be magnetized in a direction perpendicular to a surface of the channel layer; a gate formed on the semiconductor substrate between the source and the drain to adjust spins of electrons passing through the channel layer, wherein spin-polarized electrons are injected from the source to the channel layer, and the electrons injected into the channel layer pass though the channel layer and are injected into the drain, and wherein the spins of the electrons passing through the channel layer undergo precession due to a spin-orbit coupling induced magnetic field according to a voltage of the gate.

An electrostatic latent image developing carrier is provided which comprises a core particle and a resin coating layer containing conductive particles dispersed therein, the carrier having a volume average particle diameter of 25 to 60 μm and an average degree of circularity of 0.975 or more, wherein the core particle has a BET specific surface area of 0.1 to 0.3 m2 / g and an internal void ratio of 10% or less.

As the static magnetic field used in Magnetic Resonance Imaging (“MRI”) instruments increases the resonance frequency also increases. Consequently, the signal lost due to the coil becomes an issue. To compensate for this loss, it is possible to use an active device, such as a diode, a transistor, etc., with the radio frequency coil, MRI arrangement and method according to exemplary embodiments of the present invention to generate negative resistance to cancel the coil loss resistance. In this manner, the efficiency of the RF coil at high frequency can be improved.

A combination propulsion and control handle for a work machine, including an elongate control stalk having a mounting end, an opposite free end, and an internal cavity in connection with an opening in the free end, and a hand grip disposed in overlaying relation to the free end, the hand grip including at least one input device in a position so as to be operable by a finger of a hand grasping the hand grip for causing a change of state of the input device, the at least one input device including at least one elongate conductive element extending therefrom through the opening and the internal cavity of the control stalk, the hand grip being mounted so as to allow simultaneous limited rotation thereof about the control stalk and rotation of the elongate conductive element within the stalk, for allowing varying the positioning of an operator's hand, without twisting of the conductive elements.

Device and method for dispensing a liquid, comprising a liquid container; a plurality of dispensing openings connecting to the liquid container for controlled dispensing of the liquid to a substrate, and at least one membrane which connects onto the dispensing openings and which is displaceable between a first sealing position, in which the dispensing openings are covered by the membrane, and a second opened position in which the dispensing openings are left clear by the membrane, which device is also provided with a medium-filled control system which connects to the membrane such that the membrane is displaceable between the first and the second position by means of pressure variation on the medium.

A memory cell of memory device, comprises an active region of a memory cell defined in a semiconductor substrate, and a conductive gate electrode in a trench of the active region. The gate electrode is isolated from the semiconductor substrate. An insulation layer is on the active region and on the conductive gate electrode. A conductive contact is in the insulation layer on the active region at a side of the gate electrode and isolated from the gate electrode. The contact has a first width at a top portion thereof and a second width at a bottom portion thereof, the first width being greater than the second width. The contact is formed of a single-crystal material.

A teatcup liner adapted to be mounted in a shell to form a teatcup to be applied to a teat of an animal, and a method of mounting a teatcup liner. The liner defines an inner space for receiving the teat and a longitudinal centre axis. The liner has a head portion, a tubular barrel portion and, a tubular lower portion defining a milk channel having a cross-section area perpendicular to the centre axis. The tubular lower portion has a primary engagement member to be engaged by a secondary engagement member of the shell. The liner includes a grip member extending from the tubular lower portion to be gripped by an operator when the liner is to be mounted. The grip member defines a force application zone on which a pulling force is to be applied and which seen along the centre axis is located within the cross-section area.

A spin transistor useful for device miniaturization and high-density integration is provided. The spin transistor includes: a semiconductor substrate including a channel layer; ferromagnetic source and drain disposed on the semiconductor substrate to be separated from each other and to be magnetized in a direction perpendicular to a surface of the channel layer; a gate formed on the semiconductor substrate between the source and the drain to adjust spins of electrons passing through the channel layer, wherein spin-polarized electrons are injected from the source to the channel layer, and the electrons injected into the channel layer pass though the channel layer and are injected into the drain, and wherein the spins of the electrons passing through the channel layer undergo precession due to a spin-orbit coupling induced magnetic field according to a voltage of the gate.

Film for wrapping food products, made of an edible or inedible material, curved onto itself along a longitudinal axis to form a cylinder in which the longitudinal side edges of the film are overlapping to a certain extent are in direct contact with each other but not otherwise connected, shirred or wrinkled in the manner of an accordion to form folds perpendicular to the axis of said cylinder, that can have an internal support in the form of a tube of a stiff material, and which can be externally coated by a separation sheet and an also shirred tubular net, and the method for manufacturing it.

As the static magnetic field used in Magnetic Resonance Imaging (“MRI”) instruments increases the resonance frequency also increases. Consequently, the signal lost due to the coil becomes an issue. To compensate for this loss, it is possible to use an active device, such as a diode, a transistor, etc., with the radio frequency coil, MRI arrangement and method according to exemplary embodiments of the present invention to generate negative resistance to cancel the coil loss resistance. In this manner, the efficiency of the RF coil at high frequency can be improved.

There is disclosed an insulated wire, which comprises at least one insulating layer formed by applying and baking, directly or via another insulating layer on a conductor, a resin composition containing at least one selected from the group consisting of a polyamidimide resin and a polyimide resin, each having, in the molecular structure of the resin, a structure represented by formula (I), and / or a resin composition containing at least one selected from the group consisting of a polyamidimide resin and a polyimide resin, each having, in the molecular structure of the resin, a structure represented by formula (II), and said insulated wire has 0.2% yield stress of not more than 110 Mpa. This insulated wire, even if its insulation coating is made thinner, is excellent in resistance to scratches, and it is able to prevent the coating from breakage at the time of coil working, especially of the insertion of a coil into a stator slot, under rigorous conditions.In the formulae, R1, R2, R3, and R4, each are a hydrogen atom, an alkyl group, a hydroxyl group, a halogen atom, or an alkoxy group.

The present invention facilitates memory devices and operation of dual bit and single bit memory devices by providing systems and methods that employ a salicide block to vary and equalize the resistance of a memory array during fabrication. The present invention includes utilizing a common charge dissipation region to mitigate charge-loss by providing protection against charging up of the various lines as a result of further plasma etching processes. The salicide block equalizes the charge dissipation in the memory array by providing each wordline path with a varied amount of resistance in addition to the total path resistance. Because the charge protection provided to each wordline otherwise varies depending on the resistance path to a common discharge element, a salicide block for resistance equalization provides greater reliability and predictability during processing. Other such shapes conducive for any desired resistance path fall within the scope of the invention.

According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control electrode, a current flowing between the first and second main electrodes being controlled by a control signal which is input between the control electrode and the second main electrode; and a capacitor formed by providing an insulating layer between the second main electrode and the control electrode of the semiconductor element.

An ink jet printer includes an ink container supplying ink through a tube member to a separate print head to form an image. The ink jet printer also includes a supporting portion that supports the tube member. As the print head reciprocates in a width direction of a recording medium, the tube member flexes as the print head mounted on a carriage moves. The tube protruding from the print head is inclined at approximately 30 degrees with respect to a moving direction of the print head, toward the supporting portion. When the tube is pulled toward the supporting portion, resistance to the movement of the print head can be restricted. When the tube bends or curves between the supporting portion and the print head, the tube can be moved smoothly toward the supporting portion. Thus, when the print head reciprocates, the tube can flex smoothly and the resistance applied to the print head by the tube can be restricted, allowing proper ink supply to the print head.

The invention relates to a device (2) for transferring longitudinally supplied elongate food products (4), such as for instance sausages. The sausages are placed here in a recess (10) of a rotatable holder body (9) and subsequently set down in lateral direction. The invention further relates to an assembly (1) of such a transfer device and a feed conveyor (3) for sausages connecting to the transfer device. The invention moreover relates to a method for transferring elongate food products such as sausages.

The present invention facilitates memory devices and operation of dual bit and single bit memory devices by providing systems and methods that employ a salicide block to vary and equalize the resistance of a memory array during fabrication. The present invention includes utilizing a common charge dissipation region to mitigate charge-loss by providing protection against charging up of the various lines as a result of further plasma etching processes. The salicide block equalizes the charge dissipation in the memory array by providing each wordline path with a varied amount of resistance in addition to the total path resistance. Because the charge protection provided to each wordline otherwise varies depending on the resistance path to a common discharge element, a salicide block for resistance equalization provides greater reliability and predictability during processing. Other such shapes conducive for any desired resistance path fall within the scope of the invention.

An intershaft seal is provided for inner and outer coaxial shafts which rotate relative to each other. The seal is located in an annular space between the shafts and maintains an axial pressure differential between a fluid pressure on the first side of the seal and a different fluid pressure on the other, second side of the seal. The seal includes a first runner which extends circumferentially around a first one of the shafts and projects therefrom into the annular space. The seal further includes a sealing ring which is coaxial with the shafts.

Provided is a lithium secondary battery comprising an anode, a cathode and a non-aqueous electrolyte, wherein the anode includes an aqueous binder, and the non-aqueous electrolyte contains (a) a cyclic anhydride or a derivative thereof; and (b) any one anion receptor selected from the group consisting of a borane compound, a borate compound and mixtures thereof. According to the present invention, a stable SEI film is formed on the anode, and the life characteristics of the battery are improved by controlling the LiF content in the SEI film.

A memory cell of memory device, comprises an active region of a memory cell defined in a semiconductor substrate, and a conductive gate electrode in a trench of the active region. The gate electrode is isolated from the semiconductor substrate. An insulation layer is on the active region and on the conductive gate electrode. A conductive contact is in the insulation layer on the active region at a side of the gate electrode and isolated from the gate electrode. The contact has a first width at a top portion thereof and a second width at a bottom portion thereof, the first width being greater than the second width. The contact is formed of a single-crystal material.