39results about How to "Good static protection" patented technology

The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones of the second conductivity type which are arranged between the floating guard rings, wherein the conductivities and / or the inter-ring zones are set such that their charge carriers are totally depleted when blocking voltage is applied. The inventive edge structure achieves a modulation of the electrical field both at the surface and in the volume of the semiconductor body. If the inventive edge structure is suitably dimensioned, the field intensity maximum can easily be situated in the depth; that is, in the region of the vertical p-n junction. Thus, a suitable edge construction which permits a “soft” leakage of the electrical field in the volume can always be provided over a wide range of concentrations of p and n doping.

The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection function against static electricity in which relatively low voltage generates for a long period of time. Electrostatic protection element sections 28 and 30 are provided with a first TFT 32 having a source electrode (S) and a drain electrode (D) where the source electrode (S) is connected to external output electrodes 16 and 18 and the drain electrode (D) is connected to common wirings 22 and 24, a second TFT 38 having a conductor 42, a source electrode (S), a drain electrode (D) and a gate electrode (G) where the conductor 42 is connected to the gate electrode (G) of the first TFT 32, the source electrode (S) is connected to the external output electrodes 16 and 18, the drain electrode (D) is connected to the conductor 42 and the gate electrode (G) is electrically floated, and a third TFT 40 having a source electrode (S), a drain electrode (D) and a gate electrode (G) where the source electrode (S) is connected to the common wirings 22 and 24, the drain electrode (D) is connected to the conductor 42 and the gate electrode is electrically floated.

A capacitive touch sensor includes multiple first-axis traces, multiple second-axis traces, an insulation layer and multiple metal traces. Each first-axis trace includes multiple first touch-sensing pads and first connecting lines connected therebetween. Each second-axis trace includes multiple second touch-sensing pads and second connecting lines connected therebetween. At least one of the first connecting line and the second connecting line is a metal printing line.

The invention provides a prepreg comprising: a primary prepreg composed of reinforcing fibers and a resin composition (I) impregnating the interior of a reinforcing fiber layer formed from these fibers; and a surface layer composed of a resin composition (II) formed on one or both sides of the primary prepreg; wherein the resin composition (I) is an epoxy resin composition [B} containing at least an epoxy resin and a thermoplastic resin, and the resin composition (II) is an epoxy resin composition [A] containing at least an epoxy resin and conductive particles.

The invention discloses melt-blown polypropylene with an ultra-long antibacterial effect and a preparation method and application thereof. The melt-blown polypropylene contains a polypropylene matrixand an antibacterial agent composition, wherein the antibacterial agent composition is selected from an organic antibacterial agent and an organic matter-modified inorganic antibacterial agent; the inorganic antibacterial agent is selected from a photocatalytic antibacterial agent and a far infrared radiation-type antibacterial agent. A melt-blown polypropylene non-woven fabric is prepared from the melt-blown polypropylene through melt blowing; and the melt-blown polypropylene can be applied to the fields of medical supplies, textiles, medical disinfection bandages, medical sheets, baby diapers and the like. According to the preparation method, a new device does not need to be added or an existing device does not need to be reformed, so that the process is simple and convenient; the long-acting antibacterial melt-blown polypropylene has a good inhibition effect on escherichia coli, staphylococcus aureus and the like; the antibacterial rate can reach 99% or above during 18 hours; and the antibacterial rate can reach 99% during 360 hours.

The invention provides an array substrate and a liquid crystal panel provided with the same. The array substrate comprises a virtual pixel area, a display area and a drive circuit area, wherein the virtual pixel area is located between the display area and the drive circuit area; polycrystalline silicon lines and gate lines which are intercrossed at different planes are arranged in the display area and the virtual pixel area, wherein the noncoplanar overlapped area of the polycrystalline silicon lines and the gate lines in the virtual pixel area is larger than thatof the polycrystalline silicon lines and the gate lines in the display area. The array substrate can release static voltage effectively and greatly reduce static voltage which is probably transmitted to the display area along the gate lines and prevents damage to the pixel function of the display area.

An electronic device including a substrate and an optoelectronic device package is provided. The optoelectronic device package includes a light source, an image sensor and a plurality of connecting pins. The light source is configured to emit light toward a direction of a bottom surface of the optoelectronic device package. The image sensor is configured to receive reflected light from the direction of the bottom surface. The connecting pins are bended toward an opposite direction of the direction of the bottom surface and electrically connected to the substrate thereby increasing a discharge path of the electrostatic discharge.

The invention relates to an imaging element comprising at least one imaging layer wherein said imaging layer comprises photosensitive silver halide layer comprising dye forming couplers, a transparent polymer pragmatic sheet below said at least one imaging layer, an adhesive layer below said pragmatic sheet, and a black carrier sheet below said adhesive layer.

A capacitive touch sensor includes multiple first-axis traces, multiple second-axis traces, an insulation layer and multiple metal traces. Each first-axis trace includes multiple first touch-sensing pads and first connecting lines connected therebetween. Each second-axis trace includes multiple second touch-sensing pads and second connecting lines connected therebetween. At least one of the first connecting line and the second connecting line is a metal printing line.

The invention provides an electrostatic protection circuit and a chip having the same. The electrostatic protection circuit comprises an internal circuit; an external bonding pad; a resistor connectedin series between the external bonding pad and the internal circuit; a grounded electrostatic protection device; a P-channel field effect transistor the source of which is connected to the gate and the electrostatic protection device, the drain of which is connected to a node between the resistor and the internal circuit, and the source and the drain of which has a first parasitic diode therebetween that forms a first electrostatic discharge circuit with the electrostatic protection device; and an N-channel field effect transistor the source of which is connected to the gate and the ground, the drain of the which is connected to a node between the resistor and the internal circuit, and the second parasitic diode of which forms a second electrostatic discharge circuit. The electrostatic protection circuit achieves good electrostatic protection, saves chip area and improves reliability.

A keyboard structure including a base, at least one key and an electronic element is provided. The key is disposed on the base and sequentially includes a cap, a limiting structure, an elastic member and a membrane switch from top to down, wherein the elastic member is disposed on the membrane switch, the cap is disposed on the elastic member, and the limiting structure connects the cap and the base, such that the cap is configured to move relative to the base in a vertical direction. The electronic element is disposed on the membrane switch and is surrounded by an electrostatic protection zone, wherein the membrane switch has a hole corresponding to the electrostatic protection zone.

The present disclosure provides an array substrate, the array substrate includes a plurality of array blocks arranged at intervals, wherein each array block includes a plurality of sub-array substrates arranged at intervals, at least one of a periphery of the array substrate, a periphery of the array block, and a periphery of the display area of the sub-array substrate is arranged with an electrostatic protection structure, the electrostatic protection structure is a transparent metal oxide wire, or a metal wire and a transparent conductive metal oxide wire arranged in layers. The existence of the electrostatic protection structure can effectively shield the outside static electricity. The disclosure also provides a liquid crystal display panel adopting the array substrate.

The invention relates to a structure of a light-emitting diode structure for improving electrostatic protection, wherein the structure comprises a substrate, a first electrode and a second electrode; a buffer layer and an N-type semiconductor layer are arranged on the substrate in turns; the N-type semiconductor layer and the buffer layer are divided into a first island-shaped structure, a second island-shaped structure and a third island-shaped structure; a source layer and a P-type semiconductor layer are arranged on the second island-shaped structure and the third island-shaped structure in turns; a transparent conductive layer is arranged on the P-type semiconductor layer on the third island-shaped structure; the first island-shaped structure, the P-type semiconductor layer on the second island-shaped structure and the transparent conductive layer are respectively provided with a passivation layer; the first electrode penetrates through the passivation layer to connect with the transparent conductive layer and the N-type semiconductor layer on the second island-shaped structure; and the second electrode penetrates through the passivation layer to connect with the N-type semiconductor layer on the first island-shaped structure and the P-type semiconductor layer on the second island-shaped structure. According to the invention, the electrostatic protection is effectively improved, the damage caused by static electricity is decreased, and the service life of an LED (light-emitting diode) chip is prolonged.

A connection structure of an electronic device includes a circuit board, a plurality of conductive contact pads and a conductive pattern. The conductive contact pads and the conductive pattern are disposed on the circuit board. The conductive contact pads are electrically insulated from one another. The conductive pattern is electrically insulated from the conductive contact pads. The conductive pattern is disposed on at least three sides of the conductive contact pads so as to generate an electrostatic discharge protection effect for the conductive contact pads.

The present invention provides an array substrate, which comprises a display region and a peripheral wiring region, wherein in the peripheral wiring region, gate driving circuits and data driving lines are arranged respectively in correspondence with scanning lines and data lines in the display region and the gate driving circuits are electrically connected to different metal layers arranged in wire on array of the chip on film region to improve the electrostatic protection of the array substrate. Because the array substrate provided by the present invention comprises the wire on array arranged in different metal layers to extend the length of the wire on array and increase the impedance of the wire on array. Thereby the input current of gate driving circuit can be decreased and the probability of gate driving circuit damage can be reduced, the electrostatic protection of the array substrate can be improved.

The invention discloses an automatic inspection machine of a step electrode. The automatic inspection machine comprises a rack, an image collection device, a transverse drive device, an industrial personal computer and a display screen, wherein the rack is provided with a detection platform and comprises a microscope stage and a servo system; the image collection device is located at the upper part of the microscope stage and comprises a base frame, a Z-axis adjusting mechanism, a shooting mechanism and a code reading mechanism; the Z-axis adjusting mechanism, the shooting mechanism and the code reading mechanism are arranged on the base frame; the Z-axis adjusting mechanism comprises a PLC and a Z-axis drive assembly; the Z-axis drive assembly is controlled by the PLC and drives the shooting mechanism to move; the shooting mechanism comprises a camera, a point light source and a laser range finder; the laser range finder is used for measuring the distance between the laser range finder and the surface of a liquid crystal screen; the code reading mechanism is used for reading bar code information carried on the liquid crystal screen; the transverse drive device is used for determining transverse motion of the image collection device relative to the detection platform; the industrial personal computer is connected with the servo system, the PLC, the camera, the point light source and the laser range finder separately and is provided with an image collection management system and a defect identification system; and the display screen is used for displaying an operation interface and a defect detection result.

The protection circuit includes hyperdactylia paralleled GGNMOS circuit, and diode. Drain pole of GGNMOS is connected to previous stage of internal circuit. Source pole of the middle GGNMOS and substrate are connected to anode of the diode, and grid pole is connected to ground. Source poles and grid poles of the other GGNMOS are connected to ground, and substrates connected to each other are connected to anode of the diode. Cathode of diode is connected to ground. When ESD occurs, the middle GGNMOS is turned to on first so as to generate bias voltage at diode, and provide the bias for substrates of all peripheral GGNMOS. Thus, all GGNMOS in the protection circuit are turned to open uniformly. The invention is suitable for manufacturing IC.

Disclosed are a transistor structure for electrostatic protection and a method for manufacturing same. The transistor structure comprises: a doped region in a substrate; field oxide layers; a first N-type well region, a P-type well region and a second N-type well region in the doped region and spaced in sequence; a first polycrystalline silicon layer and a second polycrystalline silicon layer covering part of the P-type well region; a first N+ region and a first P+ region respectively formed in the first N-type well region and the second N-type well region; a second N+ region and a second P+ region in the P-type well region. The second P+ region and the second N+ region are close to the first N+ region and the first P+ region, respectively. The structure may change a current path under forward / reverse operation; thus, a device keeps a good electrostatic protection capability and high robustness.

The protection circuit includes hyperdactylia paralleled GGNMOS circuit, and diode. Drain pole of GGNMOS is connected to previous stage of internal circuit. Source pole of the middle GGNMOS and substrate are connected to cathode of the diode, and grid pole is connected to ground. Source poles and substrates of the other GGNMOS are connected to ground; grid poles connected to each other are connected to cathode of the diode. Anode of diode is connected to ground. When ESD occurs, the middle GGNMOS is turned to on first so as to generate bias voltage at diode, and provide the bias for grid pole of all peripheral GGNMOS. Thus, all GGNMOS in the protection circuit are turned to open uniformly. The invention is suitable for manufacturing IC.

The protection circuit includes hyperdactylia paralleled GGNMOS circuit, and diode. Drain pole of GGNMOS is connected to previous stage of internal circuit. Source pole of the middle GGNMOS and substrate are connected to anode of the diode, and grid pole is connected to ground. Source poles and grid poles of the other GGNMOS are connected to ground, and substrates connected to each other are connected to anode of the diode. Cathode of diode is connected to ground. When ESD occurs, the middle GGNMOS is turned to on first so as to generate bias voltage at diode, and provide the bias for substrates of all peripheral GGNMOS. Thus, all GGNMOS in the protection circuit are turned to open uniformly. The invention is suitable for manufacturing IC.

The invention relates to a multi-state switch for anti-static protection and short-circuit protection on ground or a power supply and a method for achieving multi-state switch for anti-static protection and short-circuit protection on ground or the power supply by the multi-state switch. By the multi-state switch, the capability of the anti-static protection and short-circuit protection on the ground or the power supply of an internal integrated circuit switch can be improved. By controlling state switching of the integrated circuit switch, different voltage division networks can be formed; and meanwhile, by employing an existing voltage division resistor and a voltage stabilization tube to form a clamping circuit, a voltage of a clamping point can be limited to an action voltage which does not exceed the voltage stabilization tube, the protection performance of the internal integrated circuit on the anti-static interference and power supply or ground short circuit is improved. With the multi-state switch provided by the technical scheme, circuit transformation is performed, no extra resistance increase can be achieved, the original output characteristic of the circuit can be enabled not to be changed, and the performance of the static protection or power supply or ground short circuit is also improved.

The invention provides a circuit board. The circuit board comprises a circuit substrate and an outer protective layer, wherein the outer protective layer comprises a covering layer, a metal layer andan adhesive layer; the adhesive layer covers the surface and the side face of the circuit substrate; the adhesive layer is a conductive adhesive; the metal layer covers the side, away from the circuitsubstrate, of the adhesive layer; and the covering layer covers one side, far away from the circuit substrate, of the metal layer. The invention further provides a manufacturing method of the circuitboard. The circuit board has electrostatic protection and electromagnetic shielding performance.

The invention discloses a multi-purpose heat dissipation shielding anti-static structure for an electronic product device; the structure comprises an electronic product mainboard, a heating element, an easy-to-radiate element, an easy-to-interfere element, a support frame B and a heat dissipation shielding plate A. The heating element, the easy-to-radiate element and the easy-to-interfere element are arranged on the front surface of the electronic product mainboard, and the electronic product mainboard is grounded. The support frame B is arranged on the front face of the electronic product mainboard, and the heat dissipation shielding plate A covers the support frame B. The heating element, the easy-to-radiate element and the easy-to-interfere element are arranged in the coverage area of the heat dissipation shielding plate A. The beneficial effects are that shielding of signal radiation and electrostatic protection of elements in the internal space are facilitated; the structure is convenient to produce and maintain, good in heat dissipation effect on main heating elements in the inner space, high in cost performance and high in practical value.