35results about How to "Good static protection" patented technology

The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones of the second conductivity type which are arranged between the floating guard rings, wherein the conductivities and/or the inter-ring zones are set such that their charge carriers are totally depleted when blocking voltage is applied. The inventive edge structure achieves a modulation of the electrical field both at the surface and in the volume of the semiconductor body. If the inventive edge structure is suitably dimensioned, the field intensity maximum can easily be situated in the depth; that is, in the region of the vertical p-n junction. Thus, a suitable edge construction which permits a “soft” leakage of the electrical field in the volume can always be provided over a wide range of concentrations of p and n doping.

An electronic device including a substrate and an optoelectronic device package is provided. The optoelectronic device package includes a light source, an image sensor and a plurality of connecting pins. The light source is configured to emit light toward a direction of a bottom surface of the optoelectronic device package. The image sensor is configured to receive reflected light from the direction of the bottom surface. The connecting pins are bended toward an opposite direction of the direction of the bottom surface and electrically connected to the substrate thereby increasing a discharge path of the electrostatic discharge.

The present disclosure provides an array substrate, the array substrate includes a plurality of array blocks arranged at intervals, wherein each array block includes a plurality of sub-array substrates arranged at intervals, at least one of a periphery of the array substrate, a periphery of the array block, and a periphery of the display area of the sub-array substrate is arranged with an electrostatic protection structure, the electrostatic protection structure is a transparent metal oxide wire, or a metal wire and a transparent conductive metal oxide wire arranged in layers. The existence of the electrostatic protection structure can effectively shield the outside static electricity. The disclosure also provides a liquid crystal display panel adopting the array substrate.

The invention relates to a structure of a light-emitting diode structure for improving electrostatic protection, wherein the structure comprises a substrate, a first electrode and a second electrode; a buffer layer and an N-type semiconductor layer are arranged on the substrate in turns; the N-type semiconductor layer and the buffer layer are divided into a first island-shaped structure, a second island-shaped structure and a third island-shaped structure; a source layer and a P-type semiconductor layer are arranged on the second island-shaped structure and the third island-shaped structure in turns; a transparent conductive layer is arranged on the P-type semiconductor layer on the third island-shaped structure; the first island-shaped structure, the P-type semiconductor layer on the second island-shaped structure and the transparent conductive layer are respectively provided with a passivation layer; the first electrode penetrates through the passivation layer to connect with the transparent conductive layer and the N-type semiconductor layer on the second island-shaped structure; and the second electrode penetrates through the passivation layer to connect with the N-type semiconductor layer on the first island-shaped structure and the P-type semiconductor layer on the second island-shaped structure. According to the invention, the electrostatic protection is effectively improved, the damage caused by static electricity is decreased, and the service life of an LED (light-emitting diode) chip is prolonged.

The present invention provides an array substrate, which comprises a display region and a peripheral wiring region, wherein in the peripheral wiring region, gate driving circuits and data driving lines are arranged respectively in correspondence with scanning lines and data lines in the display region and the gate driving circuits are electrically connected to different metal layers arranged in wire on array of the chip on film region to improve the electrostatic protection of the array substrate. Because the array substrate provided by the present invention comprises the wire on array arranged in different metal layers to extend the length of the wire on array and increase the impedance of the wire on array. Thereby the input current of gate driving circuit can be decreased and the probability of gate driving circuit damage can be reduced, the electrostatic protection of the array substrate can be improved.

The invention discloses an automatic inspection machine of a step electrode. The automatic inspection machine comprises a rack, an image collection device, a transverse drive device, an industrial personal computer and a display screen, wherein the rack is provided with a detection platform and comprises a microscope stage and a servo system; the image collection device is located at the upper part of the microscope stage and comprises a base frame, a Z-axis adjusting mechanism, a shooting mechanism and a code reading mechanism; the Z-axis adjusting mechanism, the shooting mechanism and the code reading mechanism are arranged on the base frame; the Z-axis adjusting mechanism comprises a PLC and a Z-axis drive assembly; the Z-axis drive assembly is controlled by the PLC and drives the shooting mechanism to move; the shooting mechanism comprises a camera, a point light source and a laser range finder; the laser range finder is used for measuring the distance between the laser range finder and the surface of a liquid crystal screen; the code reading mechanism is used for reading bar code information carried on the liquid crystal screen; the transverse drive device is used for determining transverse motion of the image collection device relative to the detection platform; the industrial personal computer is connected with the servo system, the PLC, the camera, the point light source and the laser range finder separately and is provided with an image collection management system and a defect identification system; and the display screen is used for displaying an operation interface and a defect detection result.

The protection circuit includes hyperdactylia paralleled GGNMOS circuit, and diode. Drain pole of GGNMOS is connected to previous stage of internal circuit. Source pole of the middle GGNMOS and substrate are connected to anode of the diode, and grid pole is connected to ground. Source poles and grid poles of the other GGNMOS are connected to ground, and substrates connected to each other are connected to anode of the diode. Cathode of diode is connected to ground. When ESD occurs, the middle GGNMOS is turned to on first so as to generate bias voltage at diode, and provide the bias for substrates of all peripheral GGNMOS. Thus, all GGNMOS in the protection circuit are turned to open uniformly. The invention is suitable for manufacturing IC.

Disclosed are a transistor structure for electrostatic protection and a method for manufacturing same. The transistor structure comprises: a doped region in a substrate; field oxide layers; a first N-type well region, a P-type well region and a second N-type well region in the doped region and spaced in sequence; a first polycrystalline silicon layer and a second polycrystalline silicon layer covering part of the P-type well region; a first N+ region and a first P+ region respectively formed in the first N-type well region and the second N-type well region; a second N+ region and a second P+ region in the P-type well region. The second P+ region and the second N+ region are close to the first N+ region and the first P+ region, respectively. The structure may change a current path under forward/reverse operation; thus, a device keeps a good electrostatic protection capability and high robustness.

The protection circuit includes hyperdactylia paralleled GGNMOS circuit, and diode. Drain pole of GGNMOS is connected to previous stage of internal circuit. Source pole of the middle GGNMOS and substrate are connected to cathode of the diode, and grid pole is connected to ground. Source poles and substrates of the other GGNMOS are connected to ground; grid poles connected to each other are connected to cathode of the diode. Anode of diode is connected to ground. When ESD occurs, the middle GGNMOS is turned to on first so as to generate bias voltage at diode, and provide the bias for grid pole of all peripheral GGNMOS. Thus, all GGNMOS in the protection circuit are turned to open uniformly. The invention is suitable for manufacturing IC.

The invention provides a circuit board. The circuit board comprises a circuit substrate and an outer protective layer, wherein the outer protective layer comprises a covering layer, a metal layer andan adhesive layer; the adhesive layer covers the surface and the side face of the circuit substrate; the adhesive layer is a conductive adhesive; the metal layer covers the side, away from the circuitsubstrate, of the adhesive layer; and the covering layer covers one side, far away from the circuit substrate, of the metal layer. The invention further provides a manufacturing method of the circuitboard. The circuit board has electrostatic protection and electromagnetic shielding performance.

The invention provides a heat dissipation type distribution box, which utilizes a bottom plate to dissipate heat. The bottom plate is equipped with a plurality of first metal columns. Third metal columns of carrier plates are inserted into the first metal columns to realize thermal connection, so as to realize rapid heat dissipation. The elements on each carrier plate can be independently assembled and then inserted, so that the other carrier plates can be prevented from being influenced by static electricity of any independent carrier plate while the disassembly is facilitated. Besides, second metal columns play a role in heat dissipation, and can also lead out external static electricity to achieve an effect of electrostatic protection. At the moment, the static electricity flows from abody of a cover plate through the first metal columns along the second metal columns to the bottom plate, so that good electrostatic protection is achieved.