Electrostatic protection circuit in integrated circuit

An electrostatic protection and integrated circuit technology, applied in emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, static electricity, etc., can solve the problem of reducing the overall protection ability of electrostatic protection circuits and GGNMOS devices cannot be turned on uniformly And other problems, to achieve good electrostatic protection, uniform opening effect

Active Publication Date: 2007-06-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The GGNMOS devices in the electrostatic protection circuit of the prior art cannot be turned on uniformly, which reduces the overall protection capability of the electrostatic protection circuit

Method used

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  • Electrostatic protection circuit in integrated circuit
  • Electrostatic protection circuit in integrated circuit

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Embodiment Construction

[0013] FIG. 4 is a schematic structural diagram of an electrostatic protection circuit of an integrated circuit according to the present invention. The invention makes improvements on the basis of the multi-finger parallel GGNMOS circuit of the electrostatic protection circuit in the prior art. As shown in FIG. 4 , it includes multiple GGNMOS devices. The source and substrate of the middlemost GGNMOS device 18 are connected to the cathode of a diode 16 , its gate is grounded, and its drain is connected to the previous stage of the internal circuit 2 . The anode of the above-mentioned diode 16 is grounded. Except for the middle GGNMOS18, the drains of the other GGNMOS17 are connected to the internal circuit 2 and the input and output signals 1, their gates are connected to each other and the cathode of the diode 16, and the source and substrate are grounded.

[0014] When the device is working, the electrostatic protection circuit of an integrated circuit of the present invent...

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Abstract

The protection circuit includes hyperdactylia paralleled GGNMOS circuit, and diode. Drain pole of GGNMOS is connected to previous stage of internal circuit. Source pole of the middle GGNMOS and substrate are connected to cathode of the diode, and grid pole is connected to ground. Source poles and substrates of the other GGNMOS are connected to ground; grid poles connected to each other are connected to cathode of the diode. Anode of diode is connected to ground. When ESD occurs, the middle GGNMOS is turned to on first so as to generate bias voltage at diode, and provide the bias for grid pole of all peripheral GGNMOS. Thus, all GGNMOS in the protection circuit are turned to open uniformly. The invention is suitable for manufacturing IC.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to an electrostatic protection circuit in the integrated circuit. Background technique [0002] Integrated circuits are easily damaged by static electricity. Generally, an electrostatic protection circuit is designed in the input and output terminals of the circuit or power supply protection to prevent the internal circuit from being damaged by static electricity. GGNMOS (Gate Grounded NMOS, gate grounded N-type metal oxide transistor) is a widely used electrostatic protection structure. Figure 1 is a schematic diagram of the GGNMOS circuit structure. As shown in FIG. 1, 3 is GGNOMOS, wherein the drain 4 of the GGNOMOS is connected to the previous stage of the internal circuit 2, and the source 6, the gate 5 and the substrate 7 are all grounded. Figure 2 is the layout of the multi-finger parallel GGNMOS circuit. As shown in Figure 2, in order to ensure a certain pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60H01L23/62H01L27/02H01L27/04H05F3/04H02H9/04
Inventor 徐向明
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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