31results about How to "Effective electrostatic protection" patented technology

The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection function against static electricity in which relatively low voltage generates for a long period of time. Electrostatic protection element sections 28 and 30 are provided with a first TFT 32 having a source electrode (S) and a drain electrode (D) where the source electrode (S) is connected to external output electrodes 16 and 18 and the drain electrode (D) is connected to common wirings 22 and 24, a second TFT 38 having a conductor 42, a source electrode (S), a drain electrode (D) and a gate electrode (G) where the conductor 42 is connected to the gate electrode (G) of the first TFT 32, the source electrode (S) is connected to the external output electrodes 16 and 18, the drain electrode (D) is connected to the conductor 42 and the gate electrode (G) is electrically floated, and a third TFT 40 having a source electrode (S), a drain electrode (D) and a gate electrode (G) where the source electrode (S) is connected to the common wirings 22 and 24, the drain electrode (D) is connected to the conductor 42 and the gate electrode is electrically floated.

The invention discloses a terminal and methods for collecting static electricity and charging the same. The outer surface of the terminal of the present invention is provided with a conductive carrier, and the method for collecting static electricity by the terminal of the present invention includes: the terminal collects the electrostatic charge around the terminal and / or inside the terminal through the conductive carrier; collects the collected static electricity Charge is stored into the electrostatic storage module. The present invention absorbs the static electricity generated by the human body or other substances through the conductive carrier, and stores the collected static electricity to effectively protect the terminal from static electricity.

The object of the invention is to provide a terminal device. The terminal device comprises a screen module; a bracket disposed on the periphery of the screen module; and a grounded metal middle framelocated on one side of the back face of the screen module; an inner side face of the bracket is a metal surface, and a gap is reversed between the inner surface of the bracket and the metal middle frame; and electrostatic protection structure is arranged between the metal surface of the bracket and the metal middle frame, and the electrostatic protection structure can enable electrostatic conduction between the metal surface of the bracket and the metal middle frame. The electrostatic problem on the side edge of the screen module can be effectively solved, an effective electrostatic protectionfunction can be performed on the side edges of the screen module, and the antenna performance is ensured.

The invention belongs to the field of electronic technology and provides a low trigger voltage bidirectional SCR device based on buried layer triggering, which is used to reduce the trigger voltage of the bidirectional SCR device. The bidirectional SCR device of the present invention comprises a main device, n and m trigger devices on both sides of the main device, the trigger devices are diode devices, and adjacent trigger devices are connected in series; the main device is in the basic bidirectional SCR structure The first conductivity type well region A and the first conductivity type well region C of the first conductivity type well region are respectively provided with a first conductivity type heavily doped region, and the closed first conductivity type that only plays an isolation role in the basic bidirectional SCR is heavily doped. The doped buried layer is connected in series with external trigger diodes on both sides to form a low-voltage trigger channel of "buried layer + diode string", thereby reducing the trigger voltage of bidirectional SCR devices; at the same time, the trigger voltage can be adjusted by adjusting the number of trigger devices; The invention also effectively improves the opening speed of the device.

The invention discloses high area efficiency diode triggered controllable silicon based on two-dimension design. The high area efficiency diode triggered controllable silicon based on the two-dimension design comprises a P-type substrate, N wells, a P well, P+ injection regions, N+ injection regions, metal, a shallow-trench isolation part, a cathode and an anode, wherein the N wells comprise a first N well and a second N well, the P+ injection region comprises a first P+ injection region and a second P+ injection region, the N+ injection regions comprise a first N+ injection region, a second N+ injection region, a third N+ injection region, a fourth N+ injection region and a fifth N+ injection region, and the first N well, the P well and the second N well are arranged on the P-type substrate in sequence along the transverse direction. According to the high area efficiency diode triggered controllable silicon based on the two-dimension design, a diode is embedded into the controllable silicon at a trigger stage, electric current flows mainly along the longitudinal direction of a device, thereby, well resistance in the longitudinal direction of the device is fully utilized, and compared with conventional diode triggered controllable silicon, the high area efficiency diode triggered controllable silicon based on the two-dimension design has the advantages that only a few of series diodes of the device are required so that high trigger voltage can be achieved, and the area efficiency is increased.

The present invention relates to the technical field of semiconductor devices, in particular to an ESD protection device for an SOI power switch, comprising: a P-type substrate; an N-type deep well on the P-type substrate; first sequentially arranged on the N-type deep well N well, first P well, second N well, second P well, third N well, the width range of the second N well is 2‑8μm; the first P well includes the first P+ injection region, the first N+ Implantation region, there is a second P+ implantation region across between the first P well and the second N well; the second P well includes a second N+ implantation region, a fourth P+ implantation region, between the second N well and the second There is a third P+ injection region across the P wells; there is a gate oxide layer on the second N well, the length of the gate oxide layer is 0.25-6 μm, the first P+ injection region and the first N+ injection region are connected to the anode, and the second N well is connected to the anode. The second N+ injection region and the fourth P+ injection region are connected to the cathode, which increases the sustain voltage of the device, reduces the trigger voltage of the device, and improves the protection performance.