31results about How to "Effective electrostatic protection" patented technology

The embodiment of the invention discloses an electro static protection apparatus, a radio-frequency circuit and an electronic device. The electro static protection apparatus comprises a front-end interface, an electro static protection circuit and a rear-end circuit; the electro static protection circuit is positioned between the front-end interface and the rear-end circuit; one end of the electro static protection circuit is connected with the front-end interface, and the other end of the electro static protection circuit is connected with the rear-end circuit; and the electro static protection circuit consists of an electro static discharge circuit and a resistor by connection, and is used for discharging an electro static current transmitted by the front-end interface. The electro static protection apparatus provided by the invention can provide effective electro static protection for the electronic device.

Embodiments of the invention disclose an electrostatic protection component and an electronic device. The electrostatic protection component comprises a glass cover plate and a touch screen located onone side of the glass cover plate, wherein the edge, fitting the touch screen, of the glass cover plate is coated with a first conductive material for connecting static electricity entering the touchscreen from the edge of the glass cover plate to the ground and guiding the static electricity to outside. Effective electrostatic protection can be provided for the touch screen.

The invention relates to the technical field of semiconductor devices, in particular to an ESD protection device of an SOI power switch. The ESD protection device comprises a P-type substrate, an N-type deep well, a first N well, a first P well, a second N well, a second P well and a third N well, wherein the N-type deep well is arranged on the P-type substrate; the first N well, the first P well,the second N well, the second P well and the third N well are arranged on the N-type deep well in sequence; the width range of the second N well is 2-8 microns; the first P well internally comprisesa first P+ injection area and a first N+ injection area; a second P+ injection area crosses between the first P well and the second N well; the second P well internally comprises a second N+ injectionarea and a fourth P+ injection area; a third P+ injection area crosses between the second N well and the second P well; a gate oxide with a length range of 0.25-6 microns is arranged o the second N well; the first P+ injection area and the first N+ injection area are connected to an anode; and the second N+ injection area and the fourth P+ injection area are connected with a cathode. The ESD protection device is capable of improving the maintaining voltage of the device, reducing the triggering voltage of the device and improving the protection performance.

Embodiments of the invention disclose an electrostatic protection apparatus, a radio frequency circuit and electronic equipment. The electrostatic protection apparatus comprises a front end interface,an electrostatic protection circuit and a back end circuit; the electrostatic protection circuit is positioned between the front end interface and the back end circuit; one end of the electrostatic protection circuit is connected with the front end interface while the other end is connected with the back end circuit; and the electrostatic protection circuit consists of an electrostatic dischargecircuit and an inductor in connection, and is used for performing discharging of the electrostatic current transmitted by the front end interface. By virtue of the embodiments in the invention, effective electrostatic protection can be provided for the electronic equipment.

The invention discloses high area efficiency diode triggered controllable silicon based on two-dimension design. The high area efficiency diode triggered controllable silicon based on the two-dimension design comprises a P-type substrate, N wells, a P well, P+ injection regions, N+ injection regions, metal, a shallow-trench isolation part, a cathode and an anode, wherein the N wells comprise a first N well and a second N well, the P+ injection region comprises a first P+ injection region and a second P+ injection region, the N+ injection regions comprise a first N+ injection region, a second N+ injection region, a third N+ injection region, a fourth N+ injection region and a fifth N+ injection region, and the first N well, the P well and the second N well are arranged on the P-type substrate in sequence along the transverse direction. According to the high area efficiency diode triggered controllable silicon based on the two-dimension design, a diode is embedded into the controllable silicon at a trigger stage, electric current flows mainly along the longitudinal direction of a device, thereby, well resistance in the longitudinal direction of the device is fully utilized, and compared with conventional diode triggered controllable silicon, the high area efficiency diode triggered controllable silicon based on the two-dimension design has the advantages that only a few of series diodes of the device are required so that high trigger voltage can be achieved, and the area efficiency is increased.

The embodiment of the invention provides a display screen and electronic equipment, relates to the technical field of display, and can perform effective electrostatic protection on transistors in a display panel. The display screen comprises a display panel, and the display panel comprises a display area and a non-display area surrounding the display area; the non-display area is provided with an electrostatic discharge structure, the electrostatic discharge structure is located in the edge area of a layer above the substrate of the non-display area, the outer edge of the electrostatic discharge structure is flush with the cutting edge of the substrate of the display panel, and the electrostatic discharge structure is electrically connected with a constant voltage structure used for providing fixed voltage.

The invention relates to a power amplifier with an electrostatic discharge protection circuit. A core circuit uses a NMOS (N-channel metal oxide semiconductor) tube stacking structure; source electrodes and drain electrodes of three NMOS tubes are sequentially connected. Each NMOS tube is in bias arrangement in AB type; tandem resistors form a bias circuit. The electrostatic discharge protection circuit uses a distributed electrostatic discharge protection structure; the schematic diagram is shown as Figure 1; a diode in the protection circuit uses a PN junction diode; each electrostatic discharge protection unit uses the same diode; the diodes in parallel connection are connected through CPW (coplanar waveguide); the electrostatic discharge protection degrade of the core radio frequency power amplifier can be effectively improved; the parasitic effect of the protection circuit is weakened; the power amplifier is applicable to high work frequency.

The embodiment of the application discloses an electrostatic protection device, a radio frequency circuit, and an electronic device. The electrostatic protection device comprises a front-end interface, an electrostatic protection circuit and a rear-end circuit. The electrostatic protection circuit is arranged between the front-end interface and the rear-end circuit; and one end of the electrostatic protection circuit is connected with the front-end interface and the other end is connected with the rear-end circuit. The electrostatic protection circuit formed by at least one resistor is used for discharging electrostatic currents transmitted by the front-end interface. Therefore, electrostatic protection on an electronic device is realized.

The invention discloses a hinge type anti-static shoe cover which comprises an outer framework with the L-shaped cross section and an inner framework. The top end of he outer framework and the top end of the inner framework are connected together through a hinge in a hinged mode, a first connecting block and a second connecting block are formed at the tail end of the outer framework and the tail end of the inner framework respectively, and the first connecting block and the second connecting block are provided with threaded holes respectively and are connected through bolts in a threaded mode; the front side of the outer framework and the front side of the inner framework are provided with a spring belt, the two ends of the spring belt are fixed to the outer framework and the inner framework respectively, the tail end of the outer framework is fixedly connected with conductive rubber tape, the upper end of the conductive rubber tape is fixedly provided with a clamp, and the outer framework, the inner framework and the clamp are wrapped with conductive rubber. The novel anti-static shoe cover can be arranged on a shoe in a sleeved mode, the conductive rubber on the shoe cover is connected with an anti-static overall, replacement is convenient, and meanwhile efficient implementation electrostatic protection can be achieved.

The embodiment of the application discloses a protection circuit, a radio frequency circuit and electronic equipment. The protection circuit comprises a front-end interface, a rear-end circuit and aninductor; the inductor is arranged in parallel between the front-end interface and the rear-end circuit; one end of the inductor is respectively connected with the front-end interface and the rear-endcircuit, and the other end of the inductor is grounded; and the inductor is used for carrying out discharging on an electrostatic current transmitted by the front-end interface. According to the scheme, electrostatic discharging capacity of the electronic equipment can be improved, damage and interference of static electricity to the rear-end circuit are reduced, and effective electrostatic protection is provided for the electronic equipment.

The invention discloses an electrostatic protection method and equipment, computer equipment and a readable storage medium. The electrostatic protection method is applied to the preparation of a motor, and comprises the following steps: setting an electrostatic protection device on a preset pin of a power module of a motor; and performing plasma surface treatment on the motor, wherein the electrostatic protection device comprises a short circuit assembly, a shielding assembly and an electrostatic protection circuit. According to the method, the specific pin of the transistor in the power module is short-circuited, shielded or connected with the protection circuit by using the specific electrostatic protection device, so that effective electrostatic protection of the electrode with relatively low withstand voltage is realized, the operation is convenient and fast, the stability is good, and the power module is prevented from being damaged by static electricity generated in the electrodepreparation process.

The invention relates to a printed circuit board, a printed assembly board and electronic equipment, and the printed circuit board comprises an insulating substrate, an operation part bonding pad printed on the insulating substrate, a ground plane printed on the insulating substrate, and a protection layer covering the ground plane. The operation part bonding pad is a bonding pad used for being connected with an operation part receiving external triggering; and the protection layer forms a window beside the operation part bonding pad, so that the ground plane is exposed outwards at the window.