A Low Trigger Voltage Bidirectional SCR Device Based on Buried Layer Triggering

Abstract

The invention belongs to the field of electronic technology and provides a low trigger voltage bidirectional SCR device based on buried layer triggering, which is used to reduce the trigger voltage of the bidirectional SCR device. The bidirectional SCR device of the present invention comprises a main device, n and m trigger devices on both sides of the main device, the trigger devices are diode devices, and adjacent trigger devices are connected in series; the main device is in the basic bidirectional SCR structure The first conductivity type well region A and the first conductivity type well region C of the first conductivity type well region are respectively provided with a first conductivity type heavily doped region, and the closed first conductivity type that only plays an isolation role in the basic bidirectional SCR is heavily doped. The doped buried layer is connected in series with external trigger diodes on both sides to form a low-voltage trigger channel of "buried layer + diode string", thereby reducing the trigger voltage of bidirectional SCR devices; at the same time, the trigger voltage can be adjusted by adjusting the number of trigger devices; The invention also effectively improves the opening speed of the device.

Description

technical field

[0001] The invention belongs to the field of electronic technology, and relates to the design of an electrostatic discharge (ESD: Electro-Static discharge) protection circuit, in particular to a lateral silicon controlled rectifier SCR (Silicon Controlled Rectifier referred to as SCR). Background technique

[0002] Electro-Static Discharge (ESD for short) refers to the current flow between two objects with different electrostatic potential energies. Generally speaking, ESD refers to the rapid current flow. In people's daily life, ESD phenomena can be seen everywhere. For integrated circuits, from production to transportation, system integration and user use, all processes may generate electrostatic discharge on the pins of integrated circuits. The instantaneous large current and high power generated during the ESD process can cause a series of thermal damage to the semiconductor device, which will burn the semiconductor and metal interconnection lines; while...

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