Low-trigger voltage bidirectional SCR device based on buried layer trigger
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- UNIV OF ELECTRONICS SCI & TECH OF CHINA
- Publication Date
- 2016-12-07
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
Technical field
[0001] The present invention belongs to the field of electronic technology, relates to the design of an electrostatic discharge (ESD: Electro-Static discharge) protection circuit, and specifically relates to a horizontal silicon controlled rectifier SCR (Silicon Controlled Rectifier for short SCR). Background technique
[0002] Electro-Static Discharg (ESD for short) refers to the flow of current between two objects with different electrostatic potential energies. Generally speaking, ESD refers to rapid current flow. In people's daily life, ESD phenomenon can be seen everywhere. For integrated circuits, from production to transportation, system integration and user use, all processes may produce electrostatic discharge on the pins of the integrated circuit. The instantaneous large current and high power generated during the ESD process can cause a series of thermal damage to the semiconductor device, which will burn down the semiconductor and metal interconnectio...