ESD protection device of SOI power switch

Abstract

The invention relates to the technical field of semiconductor devices, in particular to an ESD protection device of an SOI power switch. The ESD protection device comprises a P-type substrate, an N-type deep well, a first N well, a first P well, a second N well, a second P well and a third N well, wherein the N-type deep well is arranged on the P-type substrate; the first N well, the first P well,the second N well, the second P well and the third N well are arranged on the N-type deep well in sequence; the width range of the second N well is 2-8 microns; the first P well internally comprisesa first P+ injection area and a first N+ injection area; a second P+ injection area crosses between the first P well and the second N well; the second P well internally comprises a second N+ injectionarea and a fourth P+ injection area; a third P+ injection area crosses between the second N well and the second P well; a gate oxide with a length range of 0.25-6 microns is arranged o the second N well; the first P+ injection area and the first N+ injection area are connected to an anode; and the second N+ injection area and the fourth P+ injection area are connected with a cathode. The ESD protection device is capable of improving the maintaining voltage of the device, reducing the triggering voltage of the device and improving the protection performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an ESD protection device for SOI power switches. Background technique [0002] Electrostatic discharge (ESD, Electron Static Discharge) is an instantaneous process in which a large amount of static charge is poured into the integrated circuit from the outside to the inside when the pins of an integrated circuit are floating, and the whole process takes about 1000ns. When the electrostatic discharge of the integrated circuit will generate hundreds or even thousands of volts of high voltage, the gate oxide layer of the input stage in the integrated circuit will be broken down. With the advancement of integrated circuit technology, the feature size of MOS transistors is getting smaller and smaller, and the thickness of the gate oxide layer is getting thinner. In this trend, high-performance ESD protection devices are used to discharge electrostatic charges to protect t...

AI Technical Summary

Problems solved by technology

In some circuits with input ports that need to withstand negative voltage, if the IO voltage is lower than -0.7V and the GND voltage is 0V, when a diode is used for reverse protection, the diode will be turned on during normal operation, resulting in leakage and affecting protection performance

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