ESD protection device of SOI power switch

Abstract

The invention relates to the technical field of semiconductor devices, and in particular relates to an ESD protection device of an SOI power switch. The ESD protection device comprises a P-type substrate; an N-type deep trap on the P-type substrate; a first N trap, a first P trap, a first P-type intrinsic doping area, a second N trap, a second P-type intrinsic doping area, a second P trap and a third N trap sequentially arranged on the N-type deep trap, wherein the first P trap and the second N trap are isolated by the first P-type intrinsic doping area; the second N trap and the second P trapare isolated by the second P-type intrinsic doping area; the first P trap comprises a first P+ injection area and a first N+ injection area; the second P trap comprises a second N+ injection area anda second P+ injection area therein; a gate oxide layer is arranged on the second N trap; the first P+ injection area and the first N+ injection area are connected with an positive electrode; and thesecond N+ injection area and the second P+ injection area are connected with a cathode. The maintaining voltage of the device is improved, the triggering voltage of the device is reduced, and the bidirectional protection performance is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an ESD protection device for SOI power switches. Background technique [0002] Electrostatic discharge (ESD, Electron Static Discharge) is an instantaneous process in which a large amount of static charge is poured into the integrated circuit from the outside to the inside when the pins of an integrated circuit are floating, and the whole process takes about 1000ns. When the electrostatic discharge of the integrated circuit will generate hundreds or even thousands of volts of high voltage, the gate oxide layer of the input stage in the integrated circuit will be broken down. With the advancement of integrated circuit technology, the feature size of MOS transistors is getting smaller and smaller, and the thickness of the gate oxide layer is getting thinner. In this trend, high-performance ESD protection devices are used to discharge electrostatic charges to protect t...

AI Technical Summary

Problems solved by technology

In some circuits with input ports that need to withstand negative voltage, if the IO voltage is lower than -0.7V and the GND voltage is 0V, when a diode is used for reverse protection, the diode will be turned on during normal operation, resulting in leakage and affecting protection performance

Images