An esd protection device for soi power switch

A technology of ESD protection and power switching, which is applied in the direction of semiconductor devices, electric solid state devices, electrical components, etc., and can solve problems affecting protection performance

Active Publication Date: 2021-04-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In some circuits with input ports that need to withstand negative voltage, if the IO voltage is lower than -0.7V and the GND voltage is 0V, when a diode is used for reverse protection, the diode will be turned on during normal operation, resulting in leakage and affecting protection performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An esd protection device for soi power switch
  • An esd protection device for soi power switch

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0029] An embodiment of the present invention provides an ESD protection device for an SOI power switch, such as figure 2 As shown, it includes: a P-type substrate (P_sub) 101; an N-type deep well (DNW) 102 on the P-type substrate 101; a first N well 103, a first P well 104, first P-type intrinsic doped region 105, second N well 106, second P-type intrinsic doped region 107, second P well 108, third N well 109, the first P-type in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
widthaaaaaaaaaa
Login to view more

Abstract

The invention relates to the technical field of semiconductor devices, in particular to an ESD protection device for an SOI power switch, comprising: a P-type substrate; an N-type deep well on the P-type substrate; first sequentially arranged on the N-type deep well N well, first P well, first P-type intrinsic doped region, second N well, second P-type intrinsic doped region, second P well, third N well, first P-type intrinsic doped region The impurity region isolates the first P well and the second N well, and the second P-type intrinsic doping region isolates the second N well and the second P well; the first P well includes a first P+ injection region, a first N+ injection region ; The second P well includes a second N+ injection region and a second P+ injection region; there is a gate oxide layer on the second N well, the first P+ injection region and the first N+ injection region are connected to the anode, and the second N+ injection region and The second P+ injection region is connected to the cathode, which increases the maintenance voltage of the device, reduces the trigger voltage of the device, and improves the bidirectional protection performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an ESD protection device for SOI power switches. Background technique [0002] Electrostatic discharge (ESD, Electron Static Discharge) is an instantaneous process in which a large amount of static charge is poured into the integrated circuit from the outside to the inside when the pins of an integrated circuit are floating, and the whole process takes about 1000ns. When the electrostatic discharge of the integrated circuit will generate hundreds or even thousands of volts of high voltage, the gate oxide layer of the input stage in the integrated circuit will be broken down. With the advancement of integrated circuit technology, the feature size of MOS transistors is getting smaller and smaller, and the thickness of the gate oxide layer is getting thinner. In this trend, high-performance ESD protection devices are used to discharge electrostatic charges to protect t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
Inventor 蔡小五刘海南曾传滨赵海涛卜建辉罗家俊
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap