Electrostatic protection device and manufacturing method thereof

Abstract

The invention provides an electrostatic protection device and a manufacturing method thereof. The electrostatic protection device comprises: a substrate; a drift region formed on the substrate; a well region formed on the drift region; and a first body region and a second body region which are arranged on the two sides of the well region respectively, wherein the distance between the well region and the first body region is smaller than the distance between the well region and the second body region. Only a first heavily doped region is arranged in the first body region, a second heavily doped region and a third heavily doped region are arranged in the second body region, and only a fourth heavily doped region is arranged in the well region. Only a parasitic PNP triode is reserved on one side of the drain end of a traditional LDMOS-SCR device, a parasitic SCR is reserved on the other side of the drain end of the traditional LDMOS-SCR device, meanwhile, the relevant size is designed, so thateffective electrostatic protection is achieved, and the PNP is triggered before the SCR, and the latch-up phenomenon caused by deep hysteresis reaching a very low maintaining voltage due to the parasitic SCR mistakenly triggered when voltage overshoot or voltage spike burrs occur is avoided.

Description

Technical field [0001] The present invention relates to the field of semiconductor technologies, and more particularly to an electrostatic protection device and a method of fabricating it. Background technique [0002] Electrostatic discharge ESD (Electro-Static Discharge) is a common phenomenon in daily life. Although it is not easy to be perceived by human body, it will cause serious threats to integrated circuit products. According to the National-Semiconductor data statistics, 38% of today's integrated circuit failure products is caused by ESD / EOS (Electrostatic-Discharge / Electrical-over-stress). For high-voltage CMOS or high pressure BCD processes, it is widely used in manufacturing power management, high-voltage driving, and automotive electronics such as integrated circuit products. Such integrated circuit products often work in large currents, large voltages, strong electromagnetic interference environments, ESD protection devices will have problems such as low robust...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an electrostatic protection device and its manufacturing method, which can overcome the problem of false triggering of the parasitic SCR in the double-digit LDMOS-SCR device in the prior art when voltage overshoot or voltage spikes occur, resulting in deep hysteresis to Very low sustain voltage causes latch-up, i.e. avoid false triggering of latch-up

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