In one embodiment, a magnetic cell used for a semiconductor device comprises a reference layer, a free layer and a non-magnetic spacer layer disposed between the reference layer and the free layer. The non-magnetic spacer layer comprises two-component, three-component or multi-component alloy oxide material which comprises MgO containing one or multiple other elements selected from the group formed by Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo and Rh.