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Magnetic random access memory (mram) cell and method for reading the mram cell using a self-referenced read operation

A random access memory and storage layer technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of dipole coupling and other problems, and achieve the effect of low power consumption

Inactive Publication Date: 2013-04-10
CROCUS TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, dipole coupling increases with decreasing magnetic tunnel junction diameter and thus may become a major issue when scaling down MRAM cells

Method used

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  • Magnetic random access memory (mram) cell and method for reading the mram cell using a self-referenced read operation
  • Magnetic random access memory (mram) cell and method for reading the mram cell using a self-referenced read operation
  • Magnetic random access memory (mram) cell and method for reading the mram cell using a self-referenced read operation

Examples

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Embodiment Construction

[0041] In one embodiment shown in FIG. 1 , a magnetic random access memory (MRAM) cell 1 includes a magnetic tunnel junction 2 . The magnetic tunnel junction 2 comprises a synthetic storage layer 23 formed of a synthetic ferromagnetic multilayer comprising a first ferromagnetic layer 231 with a first storage magnetization 234 and a second storage magnetization 235 The first and second ferromagnetic layers 231 , 232 are separated by a spacer layer 233 . The ferromagnetic layers 231 and 232 may be made of materials such as, for example, cobalt iron (CoFe), cobalt iron boron (CoFeB), nickel iron (NiFe), cobalt (Co), and the like. The thickness of the first and second ferromagnetic layers 231 , 232 may for example be comprised between 1 nm and 10 nm.

[0042]Dimensions (eg, thickness) of spacer layer 233 may be selected to promote magnetic coupling of first and second ferromagnetic layers 231 and 232 such that first storage magnetization 234 is oriented antiparallel to second mag...

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PUM

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Abstract

The present disclosure concerns a magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) comprising a synthetic storage layer (23); a sense layer (21) having a sense magnetization (211) that is reversible; and a tunnel barrier layer (22) between the sense layer (21) and the storage layer (23); wherein a net local magnetic stray field couples the storage layer (23) with the sense layer (21); and wherein the net local magnetic stray field being such that the net local magnetic stray field coupling the sense layer (21) is below 50 Oe. The disclosure also pertains to a method for writing and reading the MRAM cell (1). The disclosed MRAM cell (1) can be written and read with lower consumption in comparison to conventional MRAM cells.

Description

technical field [0001] The present invention relates to a method for reading a Magnetic Random Access Memory (MRAM) cell using a self-referencing read operation allowing low power consumption and an MRAM cell for performing the method. Background technique [0002] In the simplest implementation, a Magnetic Random Access Memory (MRAM) cell contains at least a magnetic tunnel junction formed by two magnetic layers separated by a thin insulating layer, wherein one of the layers is characterized by a so-called reference layer is a fixed magnetization, and the second layer, the so-called storage layer, is characterized by a magnetization that can change its direction when the memory is written. When the corresponding magnetizations of the reference and storage layers are antiparallel, the resistance of the magnetic tunnel junction is high (R max ), corresponding to a low logic state "0". On the other hand, when the corresponding magnetizations are parallel, the resistance of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/15
CPCG11C11/16G11C11/161G11C11/1673G11C11/15
Inventor L.隆巴尔I.L.普雷贝亚努
Owner CROCUS TECHNOLOGY
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