Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MLC NAND data backup method and device, and flash memory system

A data backup and backup technology, which is applied in the field of memory, can solve the problems of consumption performance and lifespan, and achieve the effect of improving performance, less data security, and long lifespan

Active Publication Date: 2021-04-16
珠海妙存科技有限公司
View PDF17 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, all LSB page data needs to be backed up, which greatly consumes performance and lifespan

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MLC NAND data backup method and device, and flash memory system
  • MLC NAND data backup method and device, and flash memory system
  • MLC NAND data backup method and device, and flash memory system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0026] In the description of the present invention, the meaning of several means one or more, and the meaning of multiple means two or more than two. Greater than, less than, exceeding, etc. are understood as not including the original number, and above, below, within, etc. are understood as including the original number . If the description of the first and second is only for the purpose of distinguishing the technical features, it cannot be understood as indicating or implying the relative importance or implicitly indicating the number...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of memories, and discloses an MLC NAND data backup method and device, and a flash memory system. The backup method comprises the steps of receiving data to be written into an MLC NAND flash memory; and if at least one of a first instruction, receiving a second instruction and a third instruction, setting the backup flag bit as a valid bit, the first instruction being an instruction for ensuring data security, the second instruction being an instruction for writing the data into other storage blocks except the current storage block of the MLC, and the third instruction being an instruction for applying for a new storage block. The method at least has the advantages that it can be guaranteed that the data stored in the MLC NAND cannot be lost or inconsistent due to abnormal power failure only by backing up a small amount of LSB page data, and the reliability of the NAND equipment is guaranteed.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to an MLC NAND data backup method, device and flash memory system. Background technique [0002] In the technological evolution of NAND Flash, different types of NAND Flash such as SLC NAND, MLC NAND, TLC NAND, and QLC NAND have emerged. These types of NAND Flash have their own physical operation characteristics. These physical operation characteristics will affect the operation strategy in FTL (Flash Translation Layer). [0003] In MLC NAND, a storage cell (storage unit) stores 2 bits of data. This physical structure determines that there are two paired pages of LSB page and MSB page in a wordline (word line) of MLC NAND. When programming, program the LSB page first, and then program the MSB page, and the programming of the MSB page is realized on the basis of the programming that has been completed on the LSB page. In this way, when the MSB page is abnormally powered off during pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/14G06F3/06
Inventor 曾裕
Owner 珠海妙存科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com