Memory cell and content addressable memory having the same

Abstract

The invention discloses a memory cell and a content addresable memory body. A memory cell includes a set of storage switch units, a set of memory units, a set of comparison switch units and a discharge switch unit. The storage switch units are turned on by a turn-on signal transmitted by a word line. The memory units receive and store write data transmitted by a bit line or a source line when the storage switch units are on under a write mode. The comparison switch units are turned on by comparison data transmitted by comparison lines under a search mode. The discharge switch unit is turned on by a detection voltage under the search mode when the comparison data transmitted by the comparison lines is different from the write data stored in the memory units, so that the reference signal transmitted to the comparator is redirected to a reference voltage. A content addressable memory using the memory cell is also provided.

Description

technical field [0001] The invention relates to a memory cell applicable to a resistive content addressable memory, in particular to a memory cell capable of simplifying circuit structure and a content addressable memory with the memory cell. Background technique [0002] Nowadays, due to the rise of energy awareness, low power consumption and small area design have become the indispensable design focus of electronic products such as handheld, wearable, and wireless sensor networks. However, memory usually occupies a relatively large ratio of power consumption and area of ​​a system chip, so that the reduction of power consumption of electronic products is limited, and the size of the overall area is also difficult to be reduced better. [0003] In order to solve the above problems, the resistive content addressable memory unit is currently used as an improvement of the conventional memory, because the resistive content addressable memory unit can be applied to hand-held, we...

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Problems solved by technology

[0004] However, traditional resistive content-addressable memory cells must use dual voltage sources, so a charge pump circuit or other various voltage conversion circuits need to be installed in the circuit, but such a design will not only increase the overall use of the circuit area , which increases the power consumption required for writing and searching, and also reduces the speed of data writing and comparison. Therefore, how to reduce the use of related electronic components will be the problem and focus of this case.

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