Method and device for writing data in memory chip

Abstract

The embodiment of the invention discloses a method and device for writing data in a memory chip. According to the method and device, whether enough space for writing of new data exists or not is judged, if yes, the new data are directly written in, and if not, an erasing operation is carried out. Therefore, the frequency of writing operations and the frequency of erasing operations in the Flash memory chip are further reduced, and the service life of the Flash memory chip is greatly prolonged. The method comprises the steps of (1) judging whether enough space for writing of first data exists or not , if yes, executing the step (2), if not, executing the step (3), (2) writing the first data in a first idle memory area, and (3) erasing all the memory areas, and writing the first data in the corresponding memory area.

Description

technical field [0001] The invention relates to the field of embedded technology, in particular to a method and device for writing data into a memory chip. Background technique [0002] Flash storage chip is the specific application of the concept of embedded system chips in the storage industry. The most important storage chips in embedded system chips are Flash storage chips and RAM chips. However, because the data of Flash storage chips will not The lost special function makes the application of Flash memory chip more extensive. [0003] However, during the rewriting process of today's Flash memory chips, the number of erase operations and write operations is limited, such as figure 1 As shown, when a certain system or in a certain use environment needs to frequently modify a certain parameter in the Flash memory chip, due to the particularity of the Flash memory chip, the page erase action is performed when erasing, so when it is necessary to modify the figure 1 When r...

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Problems solved by technology

[0003] However, during the rewriting process of today's Flash memory chips, the number of erase operations and write operations is limited, such as figure 1 As shown, when a certain system or in a certain use environment needs to frequently modify a certain parameter in the Flash memory chip, due to the particularity of the Flash memory chip, the page erase action is performed when erasing, so when it is necessary to modify the figure 1 When rewriting C3 data, when C3 is written 100K times, P1 page is correspondingly erased 100K times. However, other parameters always maintain the original erase value. When C3 is always written, As a result, when erasing reaches a maximum number of times, the erasing and writing life of the Flash memory chip on the P1 page is terminated, and the storage / reading function of the P1 page is also lost, which means that except for C3, C1, C2 and C4 data cannot be obtained. Therefore, in an embedded system, a fast-running system may erase and write the same area of ​​the Flash chip multiple times. If the number of erasing and writing in this area exceeds the limit, the storage unit in this area damage

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