Perpendicular magnetization magnetic element utilizing spin transfer

Abstract

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The method and system include providing a first pinned layer, a barrier layer, a free layer, a conductive nonmagnetic spacer layer, and a second pinned layer. Each pinned layer has a pinned layer easy axis. At least a portion of the pinned layer easy axis is in a perpendicular direction. The barrier layer resides between the first pinned layer and the free layer. The spacer layer is between the free layer and the second pinned layer. The free layer has a free layer easy axis, at least a portion of which is in the perpendicular direction. The magnetic element is also configured to allow the free layer to be switched due to spin transfer effect when a write current is passed through the magnetic element. Because of the perpendicular magnetization(s), the writing current for spin transfer may be significantly reduced.

Description

technical field

[0001] The present invention relates to magnetic memory systems, and more particularly to a method and system for providing a magnetic element having a layer of perpendicular magnetization that employs switching induced by spin transfer, and It can be used in magnetic memory such as Magnetic Random Access Memory ("MRAM"). Background technique

[0002] Figures 1A and 1B depict conventional magnetic elements 10 and 10'. The conventional magnetic element 10 is a spin valve and includes a conventional antiferromagnetic (AFM) layer 12 , a conventional pinned layer 14 , a conventional nonmagnetic spacer layer 16 and a conventional free layer 18 . Other layers (not shown), such as seed or capping layers, may also be used. The conventional pinned layer 14 and the conventional free layer 18 are ferromagnetic. Accordingly, a conventional free layer 18 is described as having a variable magnetization 19 . Conventional non-magnetic spacer layer 16 is conductive. The ...

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