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Perpendicular magnetization magnetic element utilizing spin transfer

一种磁性元件、磁性的技术，应用在磁性存储系统领域，能够解决切换电流高等问题

Inactive Publication Date: 2007-03-28
GRANDIS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, although conventional magnetic elements are able to use spin transfer as a switching mechanism, the switching current due to the large 2πM s value of the item is higher
For the above reasons, high switching currents are undesirable for magnetic memory applications

Method used

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  • Perpendicular magnetization magnetic element utilizing spin transfer
  • Perpendicular magnetization magnetic element utilizing spin transfer
  • Perpendicular magnetization magnetic element utilizing spin transfer

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Embodiment Construction

[0031] The present invention relates to improvements in magnetic elements such as MRAMs and magnetic memories. The following description enables one of ordinary skill in the art to make and use the invention, and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiment will be readily apparent to those skilled in the art, and the general principles herein can be applied to other embodiments. Thus, the present invention is not intended to be limited to the embodiments shown but is to be accorded the widest scope consistent with the principles and features described herein.

[0032] The present invention proposes a method and system for providing a magnetic element usable in a magnetic memory. The method and system include providing a first pinned layer, an insulating barrier layer, a free layer, a conductive non-magnetic spacer layer, and a second pinned layer. Each pinned layer has a pinned layer easy axis. A...

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PUM

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Abstract

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The method and system include providing a first pinned layer, a barrier layer, a free layer, a conductive nonmagnetic spacer layer, and a second pinned layer. Each pinned layer has a pinned layer easy axis. At least a portion of the pinned layer easy axis is in a perpendicular direction. The barrier layer resides between the first pinned layer and the free layer. The spacer layer is between the free layer and the second pinned layer. The free layer has a free layer easy axis, at least a portion of which is in the perpendicular direction. The magnetic element is also configured to allow the free layer to be switched due to spin transfer effect when a write current is passed through the magnetic element. Because of the perpendicular magnetization(s), the writing current for spin transfer may be significantly reduced.

Description

technical field [0001] The present invention relates to magnetic memory systems, and more particularly to a method and system for providing a magnetic element having a layer of perpendicular magnetization that employs switching induced by spin transfer, and It can be used in magnetic memory such as Magnetic Random Access Memory ("MRAM"). Background technique [0002] Figures 1A and 1B depict conventional magnetic elements 10 and 10'. The conventional magnetic element 10 is a spin valve and includes a conventional antiferromagnetic (AFM) layer 12 , a conventional pinned layer 14 , a conventional nonmagnetic spacer layer 16 and a conventional free layer 18 . Other layers (not shown), such as seed or capping layers, may also be used. The conventional pinned layer 14 and the conventional free layer 18 are ferromagnetic. Accordingly, a conventional free layer 18 is described as having a variable magnetization 19 . Conventional non-magnetic spacer layer 16 is conductive. The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/14G11C11/00G11C11/16
CPCH01L43/08H01F41/302G01R33/093H01F10/3236H01F10/3272B82Y25/00H01F10/3263G11C11/16B82Y40/00H01F10/3286H10N50/10G11C11/14G11C11/15
Inventor 怀一鸣
Owner GRANDIS
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