Magnetic cell and method for programming magnetic memory

A magnetic memory and magnetic component technology, applied in the field of programming magnetic memory, can solve problems such as attenuation, disordered interface, and enhancement of dead magnetic regions

Active Publication Date: 2014-01-01
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The direct exposure of the conventional free layer 20 to the top contact 24

Method used

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  • Magnetic cell and method for programming magnetic memory
  • Magnetic cell and method for programming magnetic memory
  • Magnetic cell and method for programming magnetic memory

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Embodiment Construction

[0028] Exemplary embodiments relate to magnetic elements that may be used in magnetic devices such as magnetic memories, and devices using such magnetic elements. The following description is given to enable one of ordinary skill in the art to make and use the invention, and is provided in the context of a patent application and its claims. Various modifications to the exemplary embodiments and the general principles and features described herein will be readily apparent. The exemplary embodiments are described primarily in terms of particular methods and systems provided in particular implementations. However, these methods and systems will work effectively in other implementations. Phrases such as "exemplary embodiment," "one embodiment," and "another embodiment" can refer to the same or different embodiments as well as multiple embodiments. Embodiments will be described with respect to systems and / or devices having particular components. However, the systems and / or devic...

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Abstract

In one embodiment, a magnetic cell used for a semiconductor device comprises a reference layer, a free layer and a non-magnetic spacer layer disposed between the reference layer and the free layer. The non-magnetic spacer layer comprises two-component, three-component or multi-component alloy oxide material which comprises MgO containing one or multiple other elements selected from the group formed by Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo and Rh.

Description

technical field [0001] The inventive concept relates to a magnetic element for a semiconductor device and a method of programming a magnetic memory. Background technique [0002] Magnetic memory, especially Magnetic Random Access Memory (MRAM), has attracted increasing attention due to its potential for high read / write speed during operation, excellent endurance, non-volatility, and low power consumption. focus on. MRAM can store information using magnetic materials as an information recording medium. One type of MRAM is spin-transfer torque random-access memory (STT-RAM). STT-RAM utilizes a magnetic element, at least in part, to write to the magnetic element with an electric current driven through the magnetic element. [0003] For example, figure 1 An exemplary magnetic tunnel junction (MTJ) 10 is depicted, which can be used in conventional STT-RAM. A conventional MTJ 10 is typically formed on a bottom contact 11 using a conventional seed layer(s) 12 and including a p...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/10G11B5/66
CPCG11C11/1659G11C11/161G11C11/16H01L21/02362H10B61/00H10N50/01H10N50/10
Inventor 陈友君唐学体
Owner SAMSUNG ELECTRONICS CO LTD
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