Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of magnetic nanometer multilayer film for magnetic sensor and its manufacturing method

A magnetic sensor, magnetic nanotechnology, applied in the nanotechnology for information processing, the manufacture/processing of electromagnetic devices, the size/direction of the magnetic field, etc. Device miniaturization and other issues, to achieve the effect of easy microfabrication, preparation and integration, and low process difficulty

Active Publication Date: 2011-12-07
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF5 Cites 37 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when using the GMR spin-valve structure and the magnetic tunnel junction, the design and preparation method of the buried permanent magnetic film greatly increases the process difficulty and manufacturing cost, and it is difficult to miniaturize the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of magnetic nanometer multilayer film for magnetic sensor and its manufacturing method
  • A kind of magnetic nanometer multilayer film for magnetic sensor and its manufacturing method
  • A kind of magnetic nanometer multilayer film for magnetic sensor and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0081] 1) Choose a Si-SiO with a thickness of 1mm 2 The substrate is used as the substrate SUB, and the vacuum on the magnetron sputtering equipment is better than 2×10 -6 Pa, the deposition rate is 0.1nm / s, and the argon pressure during deposition is the condition of 0.07Pa, the seed layer SL of Ta(5nm) / Ru(20nm) / Ta(5nm) is deposited on the substrate;

[0082] 2) On the magnetron sputtering equipment, the vacuum is better than 2×10 -6 Pa, the deposition rate is 0.1nm / s, and the argon pressure is 0.07Pa, and the first antiferromagnetic layer AF1 with a thickness of 15nm of IrMn is deposited on the seed layer SL;

[0083] 3) On the magnetron sputtering equipment, the vacuum is better than 2×10 -6 Pa, under the condition that the deposition rate is 0.06nm / s, and the argon pressure is 0.07Pa, the first ferromagnetic layer FM1 of CoFeB with a thickness of 2.5nm is deposited on the first antiferromagnetic layer AF1;

[0084] 4) On the magnetron sputtering equipment, the vacuum is...

example 2～6

[0094] Prepare Examples 2-6 according to the method of Example 1, the difference lies in the composition and thickness of each layer (as shown in Table 1 below), and the two annealing temperatures are based on the Bloch of the two antiferromagnetic layers in the reference layer and the detection layer The temperature is properly determined.

[0095] Table 1

[0096]

[0097] (Unless marked, the thickness units in the list are in nanometers)

[0098] The device resistance of the magnetic tunnel junctions of Examples 2-6 and the external magnetic field are tested, and the results show that the magnetoresistance response curves of Examples 2-6 all present a linear response to an external magnetic field.

example 7～11

[0100] Examples 7-11 are prepared in a method similar to Example 1, except that the magnetic nano-multilayer film of Examples 7-11 is structure B, that is: SUB / SL / AFM1 / FM1 / Space / FM2(1) / NM2 / FM2(2) / AFM2 / CAP, such as Figure 5 As shown, the composition and thickness of each layer are shown in Table 2 below.

[0101] Table 2

[0102]

[0103]

[0104] (Unless marked, the thickness units in the list are in nanometers)

[0105] The device resistance and the external magnetic field of the magnetic tunnel junctions of Examples 7-11 above were tested, and the results showed that the magnetoresistance response curves of Examples 7-11 all showed a linear response to the external magnetic field.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a magnetic nano-multilayers structure and the method for making it. The multilayer film includes-sequentially from one end to the other end-a substrate, a bottom layer, a magnetic reference layer, a space layer, a magnetic detecting layer and a cap layer. The, up-stated structure is for convert the information of the rotation of the magnetic moment of the magnetic detecting layer into electrical signals. The magnetic detecting layer is of a pinning structure to react to the magnetic field under detection. On the other hand, the invention sandwiches an intervening layer between the AFM and the FM to mitigate the pinning effect from the exchange bias. Moreover, the thickness of the intervening layer is adjustable to control the pinning effect from the exchange bias. The controllability ensures that the magnetic moments of the magnetic reference layer and the magnetic detecting layer remain at right angles to each other when the external field is zero. The invention achieves a GMR or TMR magnetic sensor exhibiting a linear response and by tuning the thickness of the non-magnetic metallic layer, the sensitivity as well as the detecting range of the devices can be tuned easily.

Description

technical field [0001] The invention belongs to the field of spintronics materials and magnetic sensitive sensors, in particular relates to a magnetic nano multi-layer film used for magnetic sensitive sensors and a manufacturing method thereof. Background technique [0002] Magnetic sensors have broad and important application prospects in various fields such as data storage, mechanical positioning, speed detection, and non-destructive detection. Early magneto-sensitive sensors were mainly prepared based on semiconductor materials with Hall effect and magnetic materials with magnetic anisotropy magnetoresistance (AMR) effect, but these two types of materials have low magnetic field sensitivity. With the development of spintronics, magnetic sensors based on giant magnetoresistance effect and tunneling magnetoresistance effect have been widely studied and applied. The main reason is that the magnetic field sensitivity of these two types of magnetosensitive sensors is high, an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12G01R33/09
CPCG01R33/093B82Y25/00G11C11/161G11B5/3909G11C11/16Y10S977/70G11B5/3906H01L43/08G01R33/098G11B2005/3996G01R33/02B82Y10/00H10N50/10H01L2221/00H01L2223/00H01L21/00
Inventor 马勤礼刘厚方韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com