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Terahertz detector based on antiferromagnetic nonmagnetic metal heterojunction

A terahertz detector and antiferromagnetic technology, which is applied in the use of electric radiation detectors for photometry, metal material coating process, ion implantation and plating, etc., can solve problems such as lack of terahertz detection technology, and achieve zero power Consumption, fast response, easy integration effect

Active Publication Date: 2019-07-23
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, terahertz technology still faces many challenges before it can be widely used in practical applications.
One of the main factors restricting the development of terahertz technology is the lack of terahertz detection technology with high sensitivity, low cost, low power consumption and fast response that can work at room temperature

Method used

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  • Terahertz detector based on antiferromagnetic nonmagnetic metal heterojunction
  • Terahertz detector based on antiferromagnetic nonmagnetic metal heterojunction

Examples

Experimental program
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Effect test

Embodiment 1

[0016] Spin-coat photoresist on a 4-inch high-resistance silicon substrate, and photoetch many pieces of 1x2mm 2 Then put it into the magnetron sputtering deposition chamber to prepare NiO antiferromagnetic material on it, and add a magnetic field with an intensity of 1000Oe parallel to the substrate surface when sputtering and depositing the antiferromagnetic material, and the direction of the magnetic field is vertical on the long side of the small rectangular block. The thickness of the antiferromagnetic layer is 3nm. Then proceed to deposit a non-magnetic metal Pt layer with a thickness of 3nm. Take out the sample for degumming, spin-coat photoresist again, and photoetch 1x0.5mm on both sides of the small rectangle 2 Then put the sample into the magnetron sputtering deposition chamber again to deposit a gold electrode with a thickness of 200nm. Take out the samples for degumming, cleaning, cutting, spot welding of leads, and packaging to complete the production of the d...

Embodiment 2

[0018] Spin-coat photoresist on a 4-inch high-resistance silicon substrate, and photoetch many pieces of 1x2mm 2 The size of the blank rectangular area, and then placed in the magnetron sputtering deposition chamber on which to prepare Cr 2 o 3 For antiferromagnetic materials, when sputtering and depositing antiferromagnetic materials, a magnetic field with a strength of 1000Oe parallel to the substrate surface is applied, and the direction of the magnetic field is perpendicular to the long side of the small rectangular block. The thickness of the antiferromagnetic layer is 30nm. Then continue to deposit a non-magnetic metal W layer with a thickness of 30nm. Take out the sample for degumming, spin-coat photoresist again, and photoetch 1x0.5mm on both sides of the small rectangle 2 Then put the sample into the magnetron sputtering deposition chamber again to deposit a gold electrode with a thickness of 200nm. Take out the samples for degumming, cleaning, cutting, spot weldi...

Embodiment 3

[0020] Spin-coat photoresist on a 4-inch high-resistance silicon substrate, and photoetch many pieces of 1x2mm 2 The blank rectangular area of ​​the size is then put into the magnetron sputtering deposition chamber to prepare BiFeO on it 3 For antiferromagnetic materials, when sputtering and depositing antiferromagnetic materials, a magnetic field with a strength of 1000Oe parallel to the substrate surface is applied, and the direction of the magnetic field is perpendicular to the long side of the small rectangular block. The thickness of the antiferromagnetic layer is 300nm. Then proceed to deposit a non-magnetic metal Pd layer with a thickness of 300nm. Take out the sample for degumming, spin-coat photoresist again, and photoetch 1x0.5mm on both sides of the small rectangle 2 Then put the sample into the magnetron sputtering deposition chamber again to deposit a gold electrode with a thickness of 200nm. Take out the samples for degumming, cleaning, cutting, spot welding o...

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Abstract

The invention discloses a terahertz detector based on an antiferromagnetic nonmagnetic metal heterojunction, and belongs to the technical field of photoelectric detection. The method comprises the following steps: converting terahertz radiation energy into spin waves by utilizing the antiferromagnetic coupling resonance absorption characteristic of an antiferromagnetic material in a terahertz waveband, converting the spin waves into charge flow at an interface by utilizing the reverse spin Hall effect in nonmagnetic metal with strong spin-orbit coupling, and reading out voltage signals from electrodes on two sides of the surface of the nonmagnetic metal so as to realize the detection of terahertz radiation. The terahertz detector realizes terahertz detection by utilizing the electron spinproperty, is a spin terahertz detector, and has the advantages of zero power consumption, quick response, easiness in integration, room-temperature working and the like.

Description

technical field [0001] The invention belongs to the field of photoelectric detection technology, and specifically relates to the use of the antiferromagnetic coupling resonance absorption characteristics of antiferromagnetic materials in the terahertz band to convert terahertz radiation energy into spin waves, and then utilize strong spin-orbit coupling The inverse spin Hall effect in non-magnetic metals converts spin waves into charge flow at the interface, and finally reads voltage signals on the electrodes on both sides of the non-magnetic metal surface, thereby realizing the detection of terahertz radiation. The invention uses electron spin to realize terahertz detection. It is a spin terahertz detector with the advantages of zero power consumption, fast response, easy integration, and room temperature operation. Background technique [0002] Terahertz electromagnetic waves have great scientific value and broad application prospects in object imaging, environmental monit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42C23C14/35C23C14/08C23C14/18
CPCC23C14/085C23C14/185C23C14/35G01J1/42
Inventor 吴敬黄志明李敬波江林周炜姚娘娟黄敬国褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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