Voltage control magnetic random access memory unit, memory and logic device formed from memory unit

A magnetic storage unit and random storage technology, which is applied in the fields of information technology and microelectronics, can solve problems such as the inability to control the magnetization direction, and achieve the effects of low power consumption, high integration, and short response time

Active Publication Date: 2017-03-22
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the magnetization direction ca...

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  • Voltage control magnetic random access memory unit, memory and logic device formed from memory unit
  • Voltage control magnetic random access memory unit, memory and logic device formed from memory unit
  • Voltage control magnetic random access memory unit, memory and logic device formed from memory unit

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Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. For clarity, components in the drawings may not be drawn to scale. Also, some components may be omitted from the drawings. It is contemplated that elements and features of one embodiment may be beneficially incorporated in another embodiment without further recitation.

[0029] The term "over" means partial as well as complete coverage in vertical and / or lateral directions. For example, the spin-orbit coupling layer located on the ferroelectric layer, the spin-orbit coupling layer may partially or completely cover the ferroelectric layer.

[0030] The basic idea of ​​the present invention is to provide a magnetic random access memory unit, which has a basic multi-layer film structure: ferroelectric layer / strong spin-orbit...

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Abstract

The invention proposes a voltage control magnetic random access memory unit, memory and logic device formed from the memory unit. The memory unit comprises a ferroelectric layer, a spin-orbit coupling layer and a first magnetic layer, wherein the a positive or negative first voltage can be applied onto the ferroelectric layer so as to control magnetized directional turnover, the spin-orbit coupling layer is arranged on the ferroelectric layer, a second voltage can be applied onto the spin-orbit coupling layer so as to generate a spinning current perpendicular to a direction of the layer, the first magnetic layer is arranged on the spin-orbit coupling layer, the spinning current can be used for inducing magnetism of the first magnetic layer to randomly and vertically turn over, and by combining the first voltage applied onto the ferroelectric layer, the spinning current can be used for inducing the first magnetic layer to directionally turn over. Ferroelectric polarization is generated by applying the voltages to two ends of the ferroelectric layers, a non-uniform spin-orbit coupling effect is generated, and the current can be modulated to induce the turnover direction of the magnetism of a magnetic thin film.

Description

technical field [0001] The invention belongs to the field of information technology and microelectronics, and further relates to a voltage-controlled magnetic random storage unit, a memory including the above-mentioned storage unit and a logical device composed thereof. Background technique [0002] Information storage and processing technology is an important basis for the development of contemporary information technology and plays a vital role in the progress of human society. Magnetic storage has been widely used in the field of information storage due to its advantages of non-volatility and stable storage. However, magnetic storage usually requires the assistance of an external magnetic field, which is not conducive to the miniaturization of storage devices and will restrict the further development of information technology. It is an urgent requirement in the field of information to use electric field to control the reversal of magnetization to realize information stor...

Claims

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Application Information

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IPC IPC(8): H01L43/12H01L43/08G11C11/15
CPCG11C11/15H10N50/01H10N50/10
Inventor 王开友杨美音蔡凯明
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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