Voltage-controlled magnetic random access memory unit, memory and logic devices composed thereof

A magnetic storage unit and random storage technology, which is applied in the field of information technology and microelectronics, can solve problems such as restricting the development of information technology and unfavorable miniaturization of storage devices, and achieve the effects of high integration, low power consumption, and short response time

Active Publication Date: 2019-04-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, magnetic storage usually requires the assistance of an external magnetic field, which is not conducive to the miniaturization of storage devices and will restrict the further development of information technology.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Voltage-controlled magnetic random access memory unit, memory and logic devices composed thereof
  • Voltage-controlled magnetic random access memory unit, memory and logic devices composed thereof
  • Voltage-controlled magnetic random access memory unit, memory and logic devices composed thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. For clarity, components in the drawings may not be drawn to scale. Also, some components may be omitted from the drawings. It is contemplated that elements and features of one embodiment may be beneficially incorporated in another embodiment without further recitation.

[0029] The term "over" means partial as well as complete coverage in vertical and / or lateral directions. For example, the spin-orbit coupling layer located on the ferroelectric layer, the spin-orbit coupling layer may partially or completely cover the ferroelectric layer.

[0030] The basic idea of ​​the present invention is to provide a magnetic random access memory unit, which has a basic multi-layer film structure: ferroelectric layer / strong spin-orbit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention proposes a voltage-controlled magnetic random storage unit, a memory and a logical device composed thereof. Wherein, the memory cell includes: a ferroelectric layer, on which a positive or negative first voltage can be applied to control the direction reversal of magnetization; a spin-orbit coupling layer located on the ferroelectric layer, which can be Applying a second voltage causes a spin current in the spin-orbit coupling layer. The first magnetic layer is located on the spin-orbit coupling layer, and the spin current can induce the magnetism of the first magnetic layer to flip up and down randomly. Combined with the first voltage applied by the ferroelectric layer, the spin current can induce orientation flipping of the first magnetic layer. The invention generates ferroelectric polarization by applying voltage to both ends of the ferroelectric layer to produce non-uniform spin-orbit coupling effect, and can modulate the direction of current-induced magnetic flip of the magnetic thin film.

Description

technical field [0001] The invention belongs to the field of information technology and microelectronics, and further relates to a voltage-controlled magnetic random storage unit, a memory including the above-mentioned storage unit and a logical device composed thereof. Background technique [0002] Information storage and processing technology is an important basis for the development of contemporary information technology and plays a vital role in the progress of human society. Magnetic storage has been widely used in the field of information storage due to its advantages of non-volatility and stable storage. However, magnetic storage usually requires the assistance of an external magnetic field, which is not conducive to the miniaturization of storage devices and will restrict the further development of information technology. It is an urgent requirement in the field of information to use electric field to control the reversal of magnetization to realize information stor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/08G11C11/15
CPCG11C11/15H10N50/01H10N50/10
Inventor 王开友杨美音蔡凯明
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap