Arsenide multi-junction solar cell and manufacturing method thereof

Abstract

The present invention provides an arsenide multi-junction solar cell and a manufacturing method thereof. The arsenide multi-junction solar cell comprises at least three-junction sub cells, wherein thebase region of at least one-junction sub cell is an arsenide base region which is formed in a doping gradation mode, in a region with a low dosage concentration, doping layers and non-doping layers are alternately grown to reduce the average carrier concentration, close to a PN-junction region, of the base region, and an inverse proportion relationship of a width and an average carrier concentration in an exhaust region is obtained. Therefore, the technical scheme provided by the invention can increase the thickness of the exhaust region and can improve the collection effect of carriers so asto improve the cell performances, and the base region in the mode increases the migration rate of few of carries through adoption of a mode of alternate growth of the doping layers and the non-dopinglayers so as to increase the diffusion length of few of carriers, finally lives of the carriers and improve the anti-irradiation properties of the cells.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to an arsenide multi-junction solar cell and a manufacturing method thereof. Background technique [0002] Solar cells can directly convert solar energy into electrical energy, which is a clean new energy structure. Gallium arsenide triple-junction solar cells have completely replaced Si solar cells and become The main power source of the space vehicle. Among them, the conversion efficiency of gallium arsenide triple-junction solar cells represented by GaInP / InGaAs / Ge has exceeded 30% under the space spectrum (AM0), and the conversion efficiency has exceeded 40% under the ground high concentration condition (AM1.5D, 500X). %, becoming the leader in solar cell conversion efficiency. [0003] There is high-energy charged particle radiation in the space application environment. These charged particles enter the solar cell to displace the lattice atoms, forming a lar...

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Problems solved by technology

These defects can become the recombination centers of carriers, resulting in shortened lifetime of photogenerated carriers, reducing the photoelectric conversion efficiency of solar cells, and directly affecting the on-orbit working life and reliability of spacecraft.

[0004] In the space environment, after the GaInP / InGaAs / Ge triple-junction cells are irradiated by particles, especially the cells in InGaAs will affect the performance due to the decrease of the current density due to radiation damage

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