Method and system for preparing silicon-based III-V gallium arsenide semiconductor material

Abstract

The invention provides a method and a system for preparing a silicon-based III-V gallium arsenide semiconductor material. The method comprises the following steps: preparing a silicon dioxide film on a clean single crystal silicon substrate surface; obtaining a silicon dioxide nanometer pattern layer on the silicon dioxide film by adopting the nanometer imprinting technology, wherein the silicon dioxide nanometer pattern layer comprises a growth window area exposed on the single crystal silicon substrate surface and a silicon dioxide pattern area, and the growth window area and the silicon dioxide pattern area are arranged in a staggered manner; depositing a galium arsenide buffer layer on the growth window area, wherein the height of the galium arsenide buffer layer is close to or equal to that of a table surface of the silicon dioxide pattern area; growing the III-V semiconductor material on the galium arsenide buffer layer and the silicon dioxide pattern area in an extension manner. According to the method, the silicon dioxide nanometer pattern layer is prepared by adopting the nanometer imprinting technology to be used as a pattern substrate for growth of the semiconductor material, and the problem of limitation of material sizes is solved, so that the growth and the preparation of industrial materials are facilitated, the material production cost is effectively lowered, and the method has a broad application prospect.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method and system for preparing silicon-based III-V gallium arsenide semiconductor materials. Background technique [0002] The epitaxial growth technology of large lattice mismatch heterostructure materials with no stress and low dislocation density is one of the main development directions of next-generation optoelectronic devices and multifunctional optoelectronic integrated chips. In particular, the high-quality combination of silicon materials developed in microelectronics technology with III-V direct bandgap semiconductor materials such as gallium arsenide has become the best solution for optoelectronic integration technology. However, epitaxially growing III-V semiconductor materials such as device-grade gallium arsenide (GaAs) on silicon substrates has always been a difficult problem in the field of silicon-based material research in the world. [0003] In order ...

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Problems solved by technology

[0006] The invention provides a silicon-based III-V group gallium arsenide semiconductor material preparation method and system to solve the technical problem in the prior art that large-scale, high-quality silicon-based epitaxial III-V group semiconductor materials cannot be produced

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