Method for growth of gallium arsenide monocrystal by gradient freeze method in horizontal three-temperature-zone furnace

A gradient solidification, three-temperature zone technology, applied in the direction of self-solidification, chemical instruments and methods, single crystal growth, etc., can solve the problems of unsatisfactory single crystal formation, easy softening of quartz tubes, complex structure, etc., and reduce fixed assets. The effect of investment, simplified process and high degree of automation

Inactive Publication Date: 2006-10-11
尹庆民 +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of this method is that the temperature in the T1 area is high, and the quartz tube is easy to soften; there is no setting in the T2 area; the grown single crystal is shorter
It can be seen that the traditional horizontal method of growing single crystal require

Method used

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  • Method for growth of gallium arsenide monocrystal by gradient freeze method in horizontal three-temperature-zone furnace
  • Method for growth of gallium arsenide monocrystal by gradient freeze method in horizontal three-temperature-zone furnace
  • Method for growth of gallium arsenide monocrystal by gradient freeze method in horizontal three-temperature-zone furnace

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example 1

[0040]Example 1: Non-doped high-purity GaAs single crystal growth, the size of the quartz boat is D51×31×300 (width×depth×length), 946g of 6N gallium, and 1037g of 6N arsenic. High-purity GaAs seed crystal 8g. 2.01 kg of non-doped high-purity GaAs single crystal was obtained. The surface and bottom of the crystal ingot are bright without any moisture. Test results, carrier concentration 1.1×10 15 ~2.6×10 15 / cm 3 , Mobility 5200~5860cm 2 / v.s dislocation density 8500 / cm 2 .

example 2

[0041] Example 2: Low-doped Si-GaAs single crystal growth, the size of the quartz boat is D51×31×450 (width×depth×length), 6N gallium 1542.4g, 6N arsenic 1657.6g. Dopant Si48mg. Doped Si-GaAs seed crystal 8g. 3208g doped Si-GaAs single crystal was obtained. The surface and bottom of the crystal ingot are bright without any moisture. Test results, carrier concentration 2.2~8.1×10 17 / cm 3 , mobility 2700~3600cm 2 / v.s dislocation density 6500 / cm 2 .

example 3

[0042] Example 3: Moderately doped Si-GaAs single crystal growth, the inner size of the quartz boat is D51×31×400 (width×depth×length), 1346.8g of 6N gallium, and 1448.8g of 6N arsenic. Dopant Si92mg. Doped Si-GaAs seed crystal 8g. 2793g doped Si-GaAs single crystal was obtained. The surface and bottom of the crystal ingot are bright without any moisture. Test results, carrier concentration 5.3×10 17 ~2.2×10 18 / cm, mobility 1800~2780cm 2 / v.s dislocation density 5200 / cm 2 .

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Abstract

This invention relates to the arsenide gallium single-crystal growth with level three temperature areas gradient concretion method, the character as follows: the furnace where the single-crystal grows is not moved; the temperature of high temperature T1 decreases gradually according to the single-crystal shaping point temperature, and the decreasing rate inosculates to the single-crystal growth rate.

Description

Technical field: [0001] The invention belongs to the technical field of gallium arsenide single crystal growth, specifically a technique for growing gallium arsenide single crystal by solidification. Background technique: [0002] Gallium arsenide material has superior performance, has many characteristics such as light emission and light reception, and its uses are various. Mainly used for (optoelectronic devices (such as LED IRED LD solar cells, etc.) material is a promising compound semiconductor material. [0003] One of the conventional methods for growing GaAs single crystals is the horizontal method. In the horizontal method, gallium and arsenic are vacuum-sealed in a quartz container and placed in the hot field of a horizontal furnace to grow a single crystal. The horizontal method is the main method for producing GaAs single crystals. The typical methods for growing gallium arsenide single crystal by horizontal method are: two-temperature zone Bridgmann method (...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/42
Inventor 尹庆民姚荣华
Owner 尹庆民
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