Method for recovering silicon material from waste materials in cutting crystalline silicon by diamond wire
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- ZHENJIANG HUANTAI SILICON TECH
- Publication Date
- 2012-08-22
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a method for recovering silicon material and removing impurities, in particular to a method for recovering silicon material from waste produced by diamond wire cutting crystal silicon. Background technique
[0002] Silicon wafers used for solar photovoltaic cells are straight-pulled from polycrystalline silicon raw materials into single crystal rods or cast into polycrystalline ingots. After removing the unqualified areas such as the head, tail and some shadows of the silicon ingots, they are cut into thin slices by a slicer made. The current slicing technology mainly includes steel wire carrying slurry cutting and diamond wire cutting technology. In the process of cutting with diamond wire, the silicon powder cut off enters the cooling water system of the slicer. The main component of these solid wastes is silicon powder, mixed with some metal impurities mainly nickel, trace diamond particles, Dust mud, organic impurities, e...