Low-temperature phosphorus gettering diffusion process based on removal of metal impurities in polycrystalline silicon
A technology of metal impurity and diffusion process, which is applied in the direction of diffusion/doping, crystal growth, sustainable manufacturing/processing, etc. It can solve the problems of reduced minority carrier lifetime, high impurity content, and reduced solar cell efficiency, and achieve crystal Improvement of microstructural defects, improvement of silicon wafer quality, effect of process temperature and time optimization
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Embodiment 1
[0023] A low-temperature phosphorus gettering and diffusion process based on the removal of metal impurities in polysilicon, including the following steps:
[0024] (1) Entering the boat: Start the diffusion furnace, and when the temperature in the furnace tube reaches 780°C, place the silicon wafer to be processed on the quartz boat, and then slowly put the quartz boat into the furnace tube;
[0025] (2) Stable temperature rise: After closing the furnace door, the temperature in the furnace tube is stabilized at 780°C, the atmosphere in the furnace is a nitrogen atmosphere, and the flow rate is 5L / min;
[0026] (3) Oxidation: At a temperature of 780°C, pass O into the furnace tube 2 , the time is 20min, a layer of oxide film is formed on the surface of the silicon wafer to protect the surface of the silicon wafer and increase the uniformity of diffusion;
[0027] (4) The first step of deposition: at a temperature of 780 ° C, 1000 sccmN is passed into the furnace tube 2 POCl...
Embodiment 2
[0034] A low-temperature phosphorus gettering and diffusion process based on the removal of metal impurities in polysilicon, including the following steps:
[0035] (1) Entering the boat: start the diffusion furnace, and when the temperature in the furnace tube reaches 800°C, place the silicon wafer to be processed on the quartz boat, and then slowly put the quartz boat into the furnace tube;
[0036] (2) Stable temperature rise: After closing the furnace door, the temperature in the furnace tube is stabilized at 800°C, the atmosphere in the furnace is a nitrogen atmosphere, and the flow rate is 15L / min;
[0037] (3) Oxidation: At a temperature of 800°C, pass O into the furnace tube 2 , the time is 10min, a layer of oxide film is formed on the surface of the silicon wafer to protect the surface of the silicon wafer and increase the uniformity of diffusion;
[0038] (4) The first step of deposition: at a temperature of 800 ° C, 800 sccmN is passed into the furnace tube 2 POCl...
Embodiment 3
[0045] A low-temperature phosphorus gettering and diffusion process based on the removal of metal impurities in polysilicon, including the following steps:
[0046] (1) Entering the boat: start the diffusion furnace, and when the temperature in the furnace tube reaches 790°C, place the silicon wafer to be processed on the quartz boat, and then slowly put the quartz boat into the furnace tube;
[0047] (2) Stable temperature rise: After closing the furnace door, the temperature in the furnace tube is stabilized at 790°C, the atmosphere in the furnace is a nitrogen atmosphere, and the flow rate is 10L / min;
[0048] (3) Oxidation: At a temperature of 790°C, pass O into the furnace tube 2 , and the time is 15 minutes, forming an oxide film on the surface of the silicon wafer to protect the surface of the silicon wafer and increase the uniformity of diffusion;
[0049] (4) The first step of deposition: at a temperature of 790 ° C, 500 sccmN is passed into the furnace tube 2 POCl ...
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