The application provides a
semiconductor process equipment, comprising: a process chamber and a
vacuum pumping device, the process chamber comprising a generating cavity, a
processing cavity, a first channel and a shunt channel, the generating cavity being used for generating
plasma, the
processing cavity being used for carrying out
etching process of a
wafer, two ends of the first channel being communicated with the generating cavity and the
processing cavity respectively, the processing cavity being located at the side of the first channel, two ends of the shunt channel being communicated with the first channel and the
vacuum pumping device respectively; a deflection device, used for generating at least one deflection field in the first channel, so that at least part of the positively charged particles in the
plasma generated in the generating cavity enter into the processing cavity, the shunt channel being used for guiding at least part of the neutral particles separated by the deflection device to the
vacuum pumping device; and a focusing device, arranged in the processing cavity, used for focusing the positively charged particles entering into the processing cavity to form a
charged particle beam, so as to carry out
etching on the
wafer through the
charged particle beam, thereby realizing maskless patterning
etching.